Hitachi High-tech Corporation

Toyota Jidosha Kabushiki Kaisha

Hiramatsu, Mineo

Hori, Masaru

Masaru Hori

Kazunori Shinoda

Hirotaka Hamamura

Kenji Ishikawa

Kenetsu Yokogawa

Kenji Maeda

Thi-Thuy-Nga Nguyen

Mineo Hiramatsu

Yukihisa Katayama

Hiroyuki Kano

Toru Sugiyama

A method for selective removal of a titanium aluminum carbide film against titanium aluminum nitride films by using near atmospheric pressure plasma that is a rich non-halogen radical source to produce various radicals (e.g. NH, H, CH, N, Ar, OH, O) from Ar and liquid vapor for film surface modification. The modified layer is able to form volatile products that can be easily removed by heating.

Etching method and etching apparatus

Provided is an etching technique providing higher uniformity of etching amount and a higher yield of etching processing. An etching method for etching a film layer as a processing object containing nitride of transition metal, the film layer being disposed on a surface of a wafer, includes a step of supplying reactive particles containing fluorine and hydrogen but containing no oxygen to a surface of the film layer to form a reaction layer on the surface of the film layer, and a step of eliminating the reaction layer by heating the film layer.

Etching method

Growing community of inventors

Aichi, Japan

Masaru Hori