Nagoya University

Tokyo Electron Limited

Other

Asm IP Holding B.v.

Kabushiki Kaisha Toshiba

Toyota Jidosha Kabushiki Kaisha

Hitachi-high-technologies Corporation

Fuji Machine Mfg. Co., Ltd.

Tokai National Higher Education and Research System

Meijo University

Denso Corporation

The Furukawa Electric Co., Ltd.

Showa Denko K.k.

Ibiden Company Limited

Nissan Chemical Corporation

Masaru Hori

Hiroyuki Kano

Nobuyoshi Kobayashi

Haruo Okano

Toshio Goto

Keiji Horioka

Hiroyuki Yano

Makoto Sekine

Akiko Kobayashi

Kenji Ishikawa

Hisataka Hayashi

Koji Yamakawa

Hitoshi Itoh

Satoshi Yoshida

Hiroyuki Kobayashi

Masao Ito

Masaru Izawa

Nobuo Ishii

Junichi Kitagawa

Hiroshi Amano

Kazuhiro Tomioka

Kazunori Shinoda

Toru Sugiyama

Haruki Mori

Kazuhiro Kubota

Yasuhiro Ito

Osamu Oda

Norihiko Nishizawa

Yoshiro Kabe

Joji Isozumi

Nobuya Miyoshi

Viljami J Pore

Tsuyoshi Moriya

Satoshi Tanaka

Masamitsu Itoh

Satoshi Sakai

Keisuke Hashimoto

Hitoshi Yamaguchi

Satoru Kawakami

Hajime Sakamoto

Naoyuki Kofuji

Shoichi Yamauchi

Yasunobu Someya

Kohei Kawamura

Hidenori Miyoshi

Yoshifumi Tahara

Yutaka Kouzuma

Hisashi Koaizawa

Kei Hattori

Takumi Shibata

Nobuyuki Nakane

Yoshiyuki Iwata

Toshiyuki Ikedo

Takayoshi Tsutsumi

Masafumi Ito

Mineo Hiramatsu

Shoji Den

Masaru Zaitsu

Hiroki Kondo

René Henricus Jozef Vervuurt

Sadayuki Jimbo

Hirotaka Toyoda

Toshihiko Shiozawa

Yukihisa Katayama

Toshimitsu Watanabe

Bablu Mukherjee

Takayuki Ohta

Yoshio Ishikawa

Akihiro Kawajiri

Sadayuki Toda

Miran Mozetic

Kazuaki Mori

Yuichiro Hama

Rok Zaplotnik

Zecheng Liu

Gregor Primc

Alenka Vesel

Yoshinori Morisada

Fumihiko Higuchi

Takeshi Hirayama

Hiroaki Sato

Tetsunori Kawasumi

Naofumi Yoshida

Sunja Kim

Haruka Suzuki

Kazuo Amano

Masahito Hiratsuka

Jia Li Yao

Mikio Nagai

Michishige Aoyama

Masahito Nawata

Ranjit Borude

Hirotsugu Sugiura

Yusuke Kubota

Yasuhiro Higashijima

Hioryuki Kano

Imei Shu

Yasutake Toyoshima

Methods and related systems for topographically depositing a material on a substrate are disclosed. The substrate comprises a proximal surface and a gap feature. The gap feature comprises a sidewall and a distal surface. Exemplary methods comprise, in the given order: a step of positioning the substrate on a substrate support in a reaction chamber; a step of subjecting the substrate to a plasma pre-treatment; and, a step of selectively depositing a material on at least one of the proximal surface and the distal surface with respect to the sidewall. The step of subjecting the substrate to a plasma pre-treatment comprises exposing the substrate to at least one of fluorine-containing molecules, ions, and radicals.

Methods and systems for topography-selective depositions

The current disclosure relates to methods of selectively etching material from a first surface of a substrate relative to a second surface of the substrate. The method includes providing the substrate having a first surface comprising an etchable material, and a second surface comprising a non-etchable material in a reaction chamber, providing hydrogen-containing plasma into the reaction chamber to reduce the etchable material to a predetermined depth; and providing remotely-generated reactive halogen species and hydrogen into the reaction chamber to selectively etch the reduced etchable material. The disclosure further relates to methods of selectively etching at least two different etchable materials simultaneously from a surface of a substrate relative to a non-etchable material on the same substrate, to methods of simultaneous differential etching of three or more etchable materials on a substrate, as well as to assemblies for processing semiconductor substrates.

Etching processes and processing assemblies

Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a plasma treatment. Thus, the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a silicon-containing material on the lower surface.

Methods for filling a gap and related systems and devices

According to one embodiment, there is provided a carbon hard mask laminated on an etching target film, in which the concentration ratio of a methylene group CHand a methyl group CHcontained in the carbon hard mask satisfies the expression CH/(CH+CH)≥0.5.

Carbon hard mask, film forming apparatus, and film forming method

The present disclosure relates to methods for depositing vertically oriented carbon nanowalls (CNWs) using non-equilibrium gases such as gaseous plasma. Methods are disclosed for rapid deposition of uniformly distributed nanowalls on large surfaces of substrates using ablation of bulk carbon materials by reactive gaseous species, formation of oxidized carbon-containing gaseous molecules, ionization of said molecules and interacting said molecules, neutral or positively charged, with a substrate. The CNWs prepared are useful in different applications such as fuel cells, lithium ion batteries, photovoltaic devices and sensors of specific gaseous molecules.

Carbon nanostructured materials and methods for forming carbon nanostructured materials

A method for manufacturing a semiconductor substrate having a patterned group-III nitride compound layer without collapsing a formed mask pattern due to reflow or decomposition even when an etching method at a high temperature of 300&#xb0; C.-700&#xb0; C. is used, including the steps: forming a patterned mask layer on the substrate's group-III nitride compound layer, and etching the group-III nitride compound layer by dry etching at 300&#xb0; C. or higher and 700&#xb0; C. or lower using the mask pattern, to form patterned group-III nitride compound layer, wherein the patterned mask layer contains a polymer containing a unit structure of the following Formula (1): a polymer containing a unit structure of the following Formula (2):O&#x2014;Ar&#x2003;&#x2003;Formula (2)a polymer containing a structural unit of the following Formula (3):O&#x2014;Ar&#x2014;O&#x2014;Ar-T-Ar&#x2003;&#x2003;Formula (3)a polymer containing a combination of unit structure of Formula (2) and unit structure of Formula (3), or a crosslinked structure of the polymers.

Method for manufacturing semiconductor substrate having group-III nitride compound layer

A carbon nanosheet, which is a sheet-form carbon nanomaterial having a larger area as compared with that of a similar conventional product and a side length of about 1 &#x3bc;m, and a method for producing the carbon nanosheet. The carbon nanosheet production method includes a step of mixing a solution of an iron atom-containing compound dispersed in a solvent with an alcohol, to thereby prepare a solution mixture; and a step of irradiating the solution mixture with plasma, to thereby produce a carbon nanosheet. The carbon nanosheet has a side length of 0.5 &#x3bc;m to 2.5 &#x3bc;m.

Carbon nanosheet and manufacturing method therefor

An etching process is provided that includes a pre-clean process to remove a surface oxide of a dielectric material. The removal of the oxide can be executed through a thermal reaction and/or plasma process before the etch process. In some embodiments, the removal of the oxide increases etch process control and reproducibility and can improve the selectivity versus oxides.

Pre-cleaning for etching of dielectric materials

In some embodiments, a selective cyclic (optionally dry) etching of a first surface of a substrate relative to a second surface of the substrate in a reaction chamber by chemical atomic layer etching comprises forming a modification layer using a first plasma and etching the modification layer. The first surface comprises carbon and/or nitride and the second surface does not comprise carbon and/or nitride.

Selective cyclic dry etching process of dielectric materials using plasma modification

A molecular beam epitaxy apparatus includes a radical generator for generating a radical species, a molecular beam cell for generating a molecular beam or an atomic beam, and a vacuum chamber for accommodating a substrate therein, in use, the substrate being irradiated with the radical species and the molecular beam or the atomic beam in vacuum, to thereby form, on the substrate, a crystal of a compound derived from the element of the radical species and the element of the molecular beam or the atomic beam.

Radical generator and molecular beam epitaxy apparatus

A method for etching a target layer on a substrate by a dry etching process includes at least one etching cycle, wherein an etching cycle includes: depositing a carbon halide film using reactive species on the target layer on the substrate; and etching the carbon halide film using a plasma of a non-halogen hydrogen-containing etching gas, which plasma alone does not substantially etch the target layer, thereby generating a hydrogen halide as etchant species at a boundary region of the carbon halide film and the target layer, thereby etching a portion of the target layer in the boundary region.

Method of atomic layer etching using hydrogen plasma

In an etching method of etching a tungsten film, the method is provided to execute a generating a surface reaction layer on a tungsten film that is formed on a surface of a base material by supplying a reactive species including fluorine which is generated in plasma onto the base material for a first predetermined time in a state where the base material of which the tungsten film is formed on at least a portion of the surface is cooled to a melting point temperature or lower of a tungsten fluoride, and a removing the surface reaction layer that is generated on the tungsten film by heating the base material of which the surface reaction layer is generated on the tungsten film to a boiling point temperature or higher of the tungsten fluoride for a second predetermined time.

Etching method and etching apparatus

A method for etching a titanium nitride film includes a first process of supplying reactive species, which include hydrogen and fluorine, to a base material including a titanium nitride film on at least a part of a surface, and a second process of vacuum-heating the base material to remove the surface reaction layer that is generated on the surface of the titanium nitride film in the first process.

[Object] To provide a radical generator which can produce radicals at higher density. [Means for Solution] The radical generator includes a supply tubemade of SUS, a hollow cylindrical plasma-generating tubewhich is connected to the supply tubeand which is made of pyrolytic boron nitride (PBN). A first cylindrical CCP electrodeand a second cylindrical CCP electrodeare disposed outside the plasma-generating tube. A coilis provided so as to wind about the outer circumference of the plasma-generating tubeat the downstream end of the first CCP electrode. A thin connecting tubeextending from the bottom of the plasma-generating tubeis inserted into the supply tube

A method of reforming an insulating film deposited on a substrate having a recess pattern constituted by a bottom and sidewalls, includes: providing the film deposited on the substrate having the recess pattern in an evacuatable reaction chamber, wherein a property of a portion of the film deposited on the sidewalls is inferior to that of a portion of the film deposited on a top surface of the substrate; adjusting a pressure of an atmosphere of the reaction chamber to 10 Pa or less, which atmosphere is constituted by Hand/or He without a precursor and without a reactant; and applying RF power to the atmosphere of the pressure-adjusted reaction chamber to generate a plasma to which the film is exposed, thereby reforming the portion of the film deposited on the sidewalls to improve the property of the sidewall portion of the film.

Method of reforming insulating film deposited on substrate with recess pattern

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Nagoya, Japan

Masaru Hori