Nissin Ion Equipment Co., Ltd.

Nissin Electric Co., Ltd.

Semequip, Inc.

Semiquip, Inc.

Masao Naito

Hilton Frank Glavish

Nobuo Nagai

Thomas N Horsky

Sami K Hahto

Dale Conrad Jacobson

Nariaki Hamamoto

Yasunori Ando

Hideki Fujita

Dan Nicolaescu

Benjamin Thomas King

Syuichi Maeno

Tadashi Kawai

Michael A Guerra

A magnetic system for uniformly scanning an ion beam across a semiconductor wafer comprises a magnetic scanner having ac and dc coil windings each of which extend linearly along internal pole faces of a magnetic core. The ac and dc coil windings are mutually orthogonal; a time dependent magnetic component causes ion beam scanning while a substantially static (dc) field component allows the ion beam to be bent in an orthogonal plane. The current density in the ac and dc coil windings is uniformly dispersed along the pole faces leading to an improved beam spot uniformity at the wafer. The magnetic system also includes a collimator having first and second mutually opposed symmetrical dipoles defining an aperture between them. The poles of each dipole have a pole face varying monotonically and polynomially in a direction perpendicular to a central axis of the collimator: an increasing pole gap is formed towards that central axis.

Ion beam scanner for an ion implanter

A hybrid ion implantation apparatus that is equipped with shaping masks that shape the two edges of a ribbon-like ion beam IB in the short-side direction, a profiler that measures the current distribution in the long-side direction of the ion beam IB shaped by the shaping masks, and an electron beam supply unit that supplies an electron beam EB across the entire region in the long-side direction of the ion beam IB prior to its shaping by the shaping masks, wherein the electron beam supply unit varies the supply dose of the electron beam EB at each location in the long-side direction of the ion beam IB according to results of measurements by the profiler.

Ion implantation apparatus

The ion implanter includes a deflecting electrode and a shield member. The ion beam has a ribbon shape. The deflecting electrode deflects at least a part of the ion beam in a long side direction toward a short side direction of the ion beam, based on a result measured of a beam current density distribution in the long side direction. The shield member partially shields the ion beam deflected by the deflecting electrode. The deflecting electrode includes a plate electrode and an electrode group including plural electrodes. The electrode group is disposed to face the plate electrode to interpose the ion beam between the plate electrode and the electrode group. The plate electrode is electrically grounded, and the plurality of electrodes are electrically independent from each other. Each of the plurality of electrodes is connected to an independent power source from other power sources to perform a potential setting.

Ion implanter

A magnet used in an ion beam irradiation apparatus includes a pair of magnetic poles arranged facing each other on an inner side of the magnet across an ion beam; a plurality of magnetic field concentrating members that are arranged on each of the opposing surfaces of the magnetic poles and that perform a function of trapping electrons between the magnetic poles; and a protective member that covers opposing surfaces of the magnetic field concentrating members.

Magnet for ion beam irradiation apparatus equipped with protective member that covers plurality of magnetic field concentrating members

A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line.

Ion beam apparatus and method employing magnetic scanning

A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line.

An ion beam apparatus comprises an ion sourcewhich extracts an ion beama mass separation electromagnetwhich separates an ion beamof desired mass from the ion beamextracted from the ion sourcea scannerwhich scans the injected ion beamwith a given scan center as center within a given scan surface, an electrostatic deflectorwhich deflects the ion beam through 90&#xb0; so that an ion beam of desired energy in said ion beam travels in a direction perpendicular to said scan surface within a circular-arc-shaped deflection zone centered on the scan center, and a scanning mechanismwhich retains a targetand which mechanically, reciprocally moves the targetin a direction in which the target crosses the ion beam passed from the electrostatic deflectorat a given angle.

Ion beam device

The ion implanting apparatus according to this invention includes: an ion source for producing the ion beamincluding desired ion species and being shaped in a sheet with a width longer than a narrow width of a substratea mass separating magnetfor selectively deriving the desired ion species by bending the ion beam in a direction perpendicular to a sheet face thereof, a separating slitfor selectively making the desired ion species pass through by cooperating with the mass separating magnetand a substrate drive devicefor reciprocatedly driving the substratein a direction substantially perpendicular to the sheet faceof the ion beamwithin an irradiating area of the ion beamwhich has passed through a separating slit

Ion implanting apparatus

A magnetic deflection system for scanning an ion beam over a selected surface comprising: a magnetic structure having poles with respective scanning coils and respective pole faces that define therebetween a gap through which the ion beam passes; a primary current source coupled to the scanning coils adapted to apply to the scanning coils an excitation current to generate a substantially unipolar oscillatory magnetic field in the gap that alternates in polarity as a function of time to cause scanning of the ion beam, the substantially unipolar magnetic field having a magnitude sufficiently greater than zero to prevent the transverse cross-section of the ion beam from substantially fluctuating in size while the ion beam is being scanned across the selected surface.

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Kyoto, Japan

Masao Naito