Screen Holdings Co., Ltd.

Sokudo Co., Ltd.

Screen Semiconductor Solutions Co., Ltd.

Masanori Imamura

Hidetoshi Sagawa

Masashi Kanaoka

Kazuo Morioka

Tsuyoshi Mitsuhashi

Akihiro Hisai

Satoshi Yamamoto

Atsushi Tanaka

Chikara Sagae

Kazuhiro Tadokoro

Kazuya Ono

Shinichi Takada

Taiji Matsu

Yoshinori Tawaratani

Masaaki Furukawa

Hideki Shimizu

Disclosed is a substrate treating method including a solvent supplying step of supplying a solvent to a center part of a substrate while increasing a rotation speed of the substrate. In the solvent supplying step, the solvent is successively supplied to the substrate until the solvent reaches a periphery edge of the substrate. With such a substrate treating method, the solvent is able to cover a substrate surface entirely with effective suppression of particles. In other words, a process of supplying the solvent to the substrate is performable with effectively improved quality.

Substrate treating method

A coating apparatus includes an open/close valve having a motor that allows control of opening operation and closing operation in accordance with electric signals applied from a controller. The coating apparatus further includes a suck back valve having a motor that allows control of a volume variation in a flow path for suck back that is in communication with an upstream side and a downstream side of a pipe in accordance with electric signals from the controller. The controller allows control of start of the closing operation of the open/close valve and start of suction operation of the suck back valve through application of the electric signals to the respective motors. This achieves simple adjustment of liquid cut-off.

Coating apparatus

A substrate treating method includes a determining step for determining a treating condition for hydrophobizing a surface of a substrate, based on a target regarding a dissolved area size in a resist pattern, and a treating step for hydrophobizing the surface of the substrate with the treating condition determined in the determining step before forming resist film on the surface of the substrate.

A substrate is held and rotated in a horizontal attitude by a rotation holder. A coating liquid is supplied by a coating liquid supplier to a surface to be processed of the substrate rotated by the rotation holder. A first removal liquid is supplied by a first removal liquid supplier to a first annular region at a peripheral portion of the substrate rotated by the rotation holder before the coating liquid supplied by the coating liquid supplier loses fluidity. In this state, a supply position of the first removal liquid by the first removal liquid supplier is moved from an inner edge to an outer edge of the first annular region.

Substrate processing apparatus and substrate processing method

Each chemical processing section includes a chemical liquid bottle, a buffer tank, a pump, a filter, a discharge valve and a discharge nozzle. A chemical liquid stored in the chemical liquid bottle is led to the discharge nozzle and is discharged from the discharge nozzle to a substrate. A cleaning processing section includes a solvent bottle, a cleaning liquid bottle, the buffer tank and the pump. A solvent stored in the solvent bottle, a cleaning liquid stored in the cleaning liquid bottle and a gas supplied from a gas supply source are selectively led to the discharge nozzle in each chemical liquid processing section.

Substrate processing apparatus with a cleaning processing section for cleaning a chemical liquid processing section

After a solvent is discharged onto a substrate in a period from a time point tto a time point t, rotation of the substrate is started at a time point t. A resist liquid is discharged onto a center portion of a target surface of the substrate at a time point t. A rotation speed of the substrate starts to decrease at a time point t, and attains a first speed after a certain period of time. The discharge of the resist liquid is stopped at a time point t. The rotation of the substrate is accelerated in a period from a time point tto a time point t, and the rotation speed of the substrate attains a second speed at the time point t. The rotation of the substrate is decelerated in a period from the time point tto a time point t, and the rotation speed of the substrate attains a third speed at the time point t. Here, deceleration of the rotation of the substrate in the period from the time point tto the time point tis smaller than acceleration of the rotation of the substrate in the period from the time point tto the time point t

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Kyoto, Japan

Masanori Imamura