Kioxia Corporation

Toshiba Memory Corporation

Kabushiki Kaisha Toshiba

Toshiba Memeory Corporation

Toshiba Information Systems (japan) Corporation

Toshiba Memory Coiporation

Masanobu Shirakawa

Marie Takada

Tsukasa Tokutomi

Takuya Futatsuyama

Naomi Takeda

Yoshihisa Kojima

Kenichi Abe

Hideki Yamada

Tokumasa Hara

Kengo Kurose

Takayuki Akamine

Kiyotaka Iwasaki

Atsuhiro Sato

Toshifumi Minami

Yasuyuki Baba

Ryo Yamaki

Kenta Yasufuku

Keisuke Yonehama

Hiroshi Shinohara

Akira Yamaga

Masamichi Fujiwara

Hidehiro Shiga

Hiroshi Nakamura

Osamu Torii

Riki Suzuki

Suguru Nishikawa

Kenji Sakurada

Norichika Asaoka

Naoya Tokiwa

Akio Sugahara

Kiichi Tachi

Toshikatsu Hida

Hiroshi Sukegawa

Hironori Uchikawa

Yasuhiko Kurosawa

Shohei Asami

Naoaki Kokubun

Tatsuro Hitomi

Kazumasa Yamamoto

Tomonori Takahashi

Yoshihiro Ueda

Toshio Yamamura

Kiwamu Watanabe

Sanad Bushnaq

Yusuke Ochi

Shinichi Kanno

Koji Hosono

Yuji Nagai

Hiroshi Yao

Kiyotaro Itagaki

Tetsuya Sunata

Tsuyoshi Atsumi

Yasuyuki Ushijima

Takumi Fujimori

Mizuho Yoshida

Yuta Aiba

Masaki Unno

Toshihiro Suzuki

Hitoshi Shiga

Yoshikazu Harada

Takehiko Amaki

Katsuhiko Ueki

Toshio Fujisawa

Kazutaka Takizawa

Tomoo Hishida

Hidetaka Tsuji

Kouji Watanabe

Shirou Fujita

Yu Nakanishi

Toshifumi Shano

Hiroyuki Moro

Takashi Nakagawa

Tomoyuki Kantani

Shingo Yanagawa

Yuusuke Nosaka

Kuminori Hyodo

Hideaki Yamamoto

Masaki Yoshimura

Tetsufumi Yanagida

Naoko Kifune

Marie Kuronaga

Hiroe Minagawa

Akihiko Sakai

According to one embodiment, a non-volatile memory includes a plurality of groups and a memory controller configured to execute a first operation. Each of the plurality of groups includes a plurality of cell units. Each of the plurality of cell units includes a plurality of memory cells. The first operation includes: based on a first correction amount associated with a target group, reading data from the target group; and updating the first correction amount to a second correction amount based on the data. The memory controller is configured to: select a first group as the target group; and when a condition is satisfied, select a second group as the target group after performing the first operation related to the first group.

Memory system

According to one embodiment, a memory system includes a semiconductor memory device and a controller. The device includes a plurality of memory cells capable of storing at least first to third data and a word line coupled to the plurality of memory cells. The first data is determined by a first read operation including a first read level. The second data is determined by a second read operation including a second read level. The third data is determined by a third read operation including a third read level. The controller controls the semiconductor memory device to perform a forth read operation including the first and second read levels in a search operation for first to third read voltages corresponding to the first to third read levels, respectively.

According to one embodiment, there is provided a nonvolatile memory including a memory cell array, an input/output buffer, one or more intermediate buffers, and a control circuit. The memory cell array includes a plurality of pages. Each of the one or more intermediate buffers is electrically connected between the memory cell array and the input/output buffer. The control circuit is configured to store, in a first intermediate buffer, data read through sensing operation from a first page out of the plurality of pages in accordance with a first command that includes a sensing operation instruction and designation of the first intermediate buffer among the one or more intermediate buffers.

Nonvolatile memory including intermediate buffer and input/output buffer and memory system including the nonvolatile memory

According to an embodiment, a controller acquires a first temperature detection value and executes an acquisition operation on a first storage area. The controller converts a first voltage value into a second voltage value representing the read voltage in a temperature set value based on the first temperature detection value and records the second voltage value. The acquisition operation is an operation of determining, by using the read voltages, whether memory cells are ON or OFF and acquiring the first voltage value representing the read voltage for suppressing error bits. After that, the controller acquires a second temperature detection value and converts the second voltage value into a third voltage value representing the read voltage in the second temperature detection value. The controller reads data from the memory cells by using, as the read voltage, a voltage indicated by the third voltage value.

Memory system and method

According to an embodiment, a memory system includes: a nonvolatile memory including a plurality of blocks; and a memory controller. The memory controller is configured to: make a comparison between a first erase voltage application accumulated time period and a first erase verify permission time period each corresponding to a first block targeted for erasure; cause the nonvolatile memory to execute a erase voltage application operation in a case where the first erase voltage application accumulated time period is less than the first erase verify permission time period; and cause the nonvolatile memory to execute a erase verify operation in a case where the first erase voltage application accumulated time period is equal to or greater than the first erase verify permission time period.

Memory system for performing an erase voltage application operation and an erase verify operation for a nonvolatile memory

According to one embodiment, a memory system includes a semiconductor memory and a controller. The memory system is capable of executing a first operation and a second operation. In the first operation, the controller issues a first command sequence, the semiconductor memory applies a first voltage to a first word line and applies a second voltage to a second word line to read data from the first memory, and the read data is transmitted to the controller from the semiconductor memory. In the second operation, the controller issues a second command sequence, the semiconductor memory applies a third voltage to the first word line and applies a fourth voltage to the second word line, and data held in the memory cell array is left untransmitted to the controller.

A memory system according to an embodiment includes a memory device, and a memory controller. The memory device includes first and second memory cells, a first word line, and first and second bit lines. The first and second memory cells are provided in first and second layers, respectively. The first word line is coupled to the first memory cell and the second memory cell. The first bit line is coupled to the first memory cell. The second bit line is coupled to the second memory cell. The memory controller includes a storage circuit capable of storing a correction value table. The correction value table is configured to store a first correction value of a read voltage associated with the first layer and a second correction voltage of a read voltage associated with the second layer.

Controlling memory including managing a correction value table

A memory system includes a nonvolatile memory including memory cells each configured to store first and second bits, and a memory controller. The memory controller is configured to: read first data by using a first voltage to a first read process that reads data corresponding to the first bit from the memory cells; read second data by using a second voltage to a second read process that reads data corresponding to the second bit from the memory cells; in a case where an error correction process of the first data is successful, determine a third voltage, based on the first data and third data that is obtained by error-correcting the first data; and update a first read voltage that is used to the first read process, from the first voltage to the third voltage.

According to one embodiment, a memory system includes n memory cells, each capable of storing j bits of data; and a controller. The controller is configured to write a first portion of each of first data to n-th data from among n×j data with consecutive logical addresses to the n memory cells one by one. The first data has a lowest logical address among the n×j pieces of data. The first data to the n-th data have ascending consecutive logical addresses. The controller is configured to write the first portion of one of the first to n-th data as a first bit of the j bits, and write the first portion of another one of the first to n-th data except said one of the first to n-th data as a second bit of the j bits.

Memory system and memory device

A memory system according to an embodiment includes a semiconductor memory, and a memory controller. The semiconductor memory comprises memory cells and word lines. Each of the word lines is connected to the memory cells. The memory controller executes a patrol operation including a read operation of the semiconductor memory. The word lines are classified into one of first and second groups. The memory controller executes patrol operations in which the word lines are respectively selected in a first patrol period and, in a second patrol period subsequent to the first patrol period, executes a patrol operation in which the word line included in the first group is selected and omits a patrol operation in which the word line included in the second group is selected.

A semiconductor memory device includes a first memory cell, a second memory cell above the first memory cell, a first word line electrically connected to a gate of the first memory cell, a second word line electrically connected to a gate of the second memory cell, and a control unit that performs an erasing operation on the first and second memory cells. During the erasing operation, the control unit applies a first voltage to a first word line and a second voltage higher than the first voltage to a second word line.

Semiconductor memory device

According to one embodiment, a semiconductor storage device includes a first memory cell capable of storing n-bit data (n is a natural number not less than 4). When receiving first data, including first and second bits of the n-bit data, from a controller, the semiconductor storage device writes the received first data to the first memory cell. After receiving the first data, when the semiconductor storage device receives second data including third and fourth bits of the n-bit data, the semiconductor storage device reads the first and second bits from the first memory cell and writes the n-bit data to the first memory cell based on the read first and second bits and the received second data.

Nonvolatile semiconductor memory device that includes a plurality of strings

According to one embodiment, a memory system includes a semiconductor memory device and a controller. The semiconductor memory device includes a first memory cell configured to store data. The controller is configured to output a first parameter and a first command. The first parameter relates to an erase voltage for a first erase operation with respect to the first memory cell. The first command instructs the first erase operation. The controller outputs the first command after outputting the first parameter to the semiconductor memory device.

Memory system and semiconductor memory device

According to one embodiment, a memory system includes a semiconductor memory and a controller. The semiconductor memory includes first to fourth word lines and first to fourth memory cells. The controller is configured to issue first and second instructions. The controller is further configured to execute a first operation to obtain a first read voltage based on a threshold distribution of the first memory cell, and a second operation to read data from the second memory cell.

According to one embodiment, a memory system includes a non-volatile first memory with first storage areas. A controller executes a first read operation on a second storage area of the first storage areas. When an error correction in the first read operation fails, the controller acquires a first measured value being a value of a read voltage for suppressing the number of occurrences of error bits in the second storage area. The controller updates, on the basis of the first measured value, one of first candidate values of the read voltage with a second candidate value. When the error correction in a second read operation for a third storage area of the first storage areas fails, the controller executes the read operation once or more on the third storage area by using, as the read voltages, different first candidate values of the first candidate values.

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Chigasaki, Japan

Masanobu Shirakawa