Tokyo Electron Limited

Kabushiki Kaisha Toshiba

Zeon Corporation

Max Co., Ltd.

Preferred Networks, Inc.

Masanobu Honda

Toru Hisamatsu

Yoshihide Kihara

Takayuki Katsunuma

Shinya Ishikawa

Maju Tomura

Kazuhiro Kubota

Michiko Nakaya

Kazuya Nagaseki

Masahiro Tabata

Sho Kumakura

Manabu Sato

Hironobu Ichikawa

Yutaka Matsui

Kenta Ono

Hikaru Watanabe

Masaya Kawamata

Hisataka Hayashi

Shoichiro Matsuyama

Akinori Kitamura

Hiroyuki Nakayama

Manabu Iwata

Shinji Himori

Ryuichi Asako

Shinya Morikita

Koichiro Inazawa

Toshihiro Hayami

Taichi Hirano

Yoshiki Igarashi

Akihiro Tsuji

Takahiko Kato

Kiyohito Ito

Tomoyuki Oishi

Yuta Nakane

Kenji Masuzawa

Nozomi Hirai

Tomohiko Niizeki

Takayuki Hoshi

Chishio Koshimizu

Naoki Matsumoto

Masahiro Nakamura

Daisuke Hayashi

Satoshi Tanaka

Yohei Yamazawa

Masaki Watanabe

Hiroshi Nagaike

Tatsuya Sugimoto

Masashi Saito

Hidetoshi Hanaoka

Shin Matsuura

Masaru Nishino

Tetsuji Sato

Yoshinobu Ooya

Takahiro Yokoyama

Takashi Fuse

Kazuki Narishige

Takashi Enomoto

Ryoichi Yoshida

Hironari Sasagawa

Yusuke Takino

Ken Kobayashi

Hiroo Ono

Takanori Mimura

Jin Kudo

Taketoshi Okajo

Fumiya Kobayashi

Kae Kumagai

Shuhei Ogawa

Kensuke Taniguchi

Yoshimitsu Kon

Keiji Kitagaito

Koichi Tateshita

Kiwamu Fujimoto

Tomoyo Yamaguchi

Akiteru Koh

Chungjong Lee

Wanjae Park

Hironori Moki

Tomoki Komatsu

Noriaki Kodama

Hiromi Mochizuki

Kosuke Nakago

Daisuke Motoki

Hiroharu Ito

Timothy Tianshyun Yang

One exemplary embodiment provides a substrate processing method. The method includes: providing a substrate, the substrate including a carbon-containing film, an intermediate film on the carbon-containing film, and a tin-containing film on the intermediate film, the tin-containing film having an opening pattern; first etching, the first etching including etching the intermediate film using the tin-containing film as a mask to transfer the opening pattern to the intermediate film; and second etching, the second etching using a plasma formed from a processing gas to remove the tin-containing film and etch the carbon-containing film using the intermediate film as a mask, the processing gas including hydrogen, halogen or carbon, and oxygen.

Substrate processing method and substrate processing apparatus

A technique can control the dimensions of an opening. A plasma processing method includes (a) providing a substrate including an etching target layer, and a mask layer located on an upper surface of the etching target layer and having a side surface defining at least one opening on the upper surface of the etching target layer and an extension from the side surface to at least a portion of the upper surface of the etching target layer, (b) forming a deposition layer on at least the side surface of the mask layer, and (c) at least partially etching the deposition layer using plasma generated from a first process gas to reduce a thickness of the deposition layer. The first process gas contains a gas for etching the etching target layer, and (c) is performed until the etching target layer is partially etched in a depth direction to remove the extension.

Plasma processing method and plasma processing apparatus

A substrate processing apparatus includes a chamber; a substrate support disposed in the chamber; a gas supply that supplies a gas into the chamber; and a controller that controls an overall operation of the substrate processing apparatus. The controller executes a process including: (a) placing a substrate on the substrate support, the substrate including an etching layer and a patterned mask on the etching layer; (b) forming a film on the patterned mask; (c) forming a reaction layer on the film; and (d) removing the reaction layer by applying energy to the reaction layer. In the step (c) a temperature of the substrate is set according to a thickness of the reaction layer to be formed.

Substrate processing method and substrate processing system

An apparatus which selectively etches a first region with respect to a second region made of a material different from that of the first region. The apparatus is controlled to perform a first step for generating, in a processing container housing a workpiece to be treated, a plasma of a treatment gas from a gas supply including a fluorocarbon gas, an oxygen-containing gas, and an inert gas, and forming a deposit including fluorocarbon on the object to be treated, and a second step for etching the first region with radicals of the fluorocarbon included in the deposit. The apparatus is also controlled to perform the first step and the second step repeatedly.

Etching apparatus

An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.

Etching method, substrate processing apparatus, and substrate processing system

A plasma processing apparatus in the present disclosure includes a plasma processing chamber, a gas supply, a power supply, and a controller. The controller causes (a) forming a first film on side walls of an opening of a processing target using the plasma so that the first film has different thicknesses along a spacing between pairs of side walls facing each other, and (b) forming a second film by performing a film forming cycle one or more times after (a) so that the second film has different thicknesses along the spacing between the pairs of side walls facing each other.

A substrate processing method includes: providing a substrate including a mask; forming a film on the mask; forming a reaction layer on a surface layer of the film; and removing the reaction layer by applying energy to the reaction layer.

With respect to an inference method performed by at least one processor, the method includes inputting, by the at least one processor, into a learned model, non-processed object image data of a second object and data related to a second process for the second object, and inferring, by the at least one processor using the learned model, processed object image data of the second object on which the second process has been performed. The learned model has been trained so that an output obtained in response to non-processed object image data of a first object and data related to a first process for the first object being input approaches processed object image data of the first object on which the first process has been performed.

Learning device, inference device, and learned model

A treatment method is provided that includes an embedding step of embedding an organic film in an undercoat film in which a depression is formed; and an etching step of performing etching, after the embedding step, until at least a portion of a top of the undercoat film is exposed.

Treatment method

A film deposition method includes maintaining an inside of a chamber to have a predetermined pressure, cooling a stage, on which the object to be processed mounts, to have an ultralow temperature of &#x2212;20&#xb0; C., and mounting the object to be processed on the stage, supplying a gas including a low vapor pressure material gas of a low vapor pressure material into the inside of the chamber, and generating plasma from the supplied gas including the gas of the low vapor pressure material, and causing a precursor generated from the low vapor pressure material by the plasma to be deposited on a recess part of the object to be processed.

Film deposition method and plasma processing apparatus

An etching method includes forming a protective layer containing a tin atom on a surface of a substrate. The substrate has a region to be etched and a mask provided on the region. The etching method further includes etching the region in the substrate using the mask.

An etching method includes a step of selectively forming deposit on a top surface of a mask disposed on a film of a substrate, a step of etching the film after the step of forming the deposit, a step of forming a layer of chemical species included in plasma of a processing gas, on the substrate, and a step of supplying ions from plasma of an inert gas to the substrate so that the chemical species react with the film.

Film etching method for etching film

A method for processing a substrate includes: (a) exposing a substrate with a pattern formed on a surface thereof to a first reactive species in a chamber, thereby adsorbing the first reactive species onto the surface of the substrate; (b) exposing the substrate to plasma formed by a second reactive species in the chamber, thereby forming a film on the surface of the substrate; and (c) repeating a processing including (a) and (b) two or more times while changing a residence amount of the first reactive species at a time of starting (b).

An etching method includes: preparing a compound in a processing space in which an etching target is accommodated; and etching the etching target with a mask film formed thereon, under an environment where the compound exists. The etching of the etching target includes etching the etching target under an environment where hydrogen (H) and fluorine (F) exist when the etching target contains silicon nitride (SiN), and etching the etching target under an environment where nitrogen (N), hydrogen (H), and fluorine (F) exist when the etching target contains silicon (Si). The compound includes at least one halogen element selected from a group consisting of carbon (C), chlorine (Cl), bromine (Br), and iodine (I).

Etching method and etching apparatus

A method for processing a substrate in a plasma chamber is provided. The method includes providing a substrate on which an underlying layer to be etched and a mask are formed. The method further includes forming a protective film on the mask. The method further includes performing an anisotropic deposition to selectively form a deposition layer on a top portion of the mask.

Method for processing substrates

Growing community of inventors

Miyagi, Japan

Masanobu Honda