Tokyo Electron Limited

Masami Oikawa

Tomoya Hasegawa

Yoshinori Kusakabe

Koji Sasaki

Daisuke Suzuki

Masaki Kurokawa

Hiroyuki Hayashi

Yoshihiro Takezawa

Tatsuya Miyahara

Keisuke Fujita

Tsubasa Watanabe

Sena Fujita

Yuya Takamura

A cleaning method according to an aspect of the present disclosure includes: supplying a halogen-containing gas that does not contain fluorine to an interior of a processing container that is capable of being exhausted via an exhaust pipe to perform a cleaning; and supplying a fluorine-containing gas to at least one of the interior of the processing container and an interior of the exhaust pipe to perform the cleaning after the supplying the halogen-containing gas to perform the cleaning.

Cleaning method and substrate processing apparatus

A processing apparatus includes: a processing container; a temperature sensor that detects a temperature therein; a gas supply unit that supplies a cleaning gas into the processing container; a pressure regulation unit that regulates a pressure in the processing container; and a control unit that controls the gas supply unit and the pressure regulation unit to perform a cleaning processing of removing a deposited film in the processing container. The control unit stores a vapor pressure curve in which the temperature in the processing container is associated with a vapor pressure of water in the processing container. In the cleaning processing, the control unit sets a target pressure below the vapor pressure curve based on the temperature detected by the temperature sensor and the vapor pressure curve, and controls the pressure regulation unit such that the pressure in the processing container becomes the target pressure.

Processing apparatus and cleaning processing method

A cleaning method for removing a silicon-containing film deposited in a temperature-adjustable process container by a heater and a cooler includes: stabilizing a temperature in the process container to a cleaning temperature; and removing the silicon-containing film by supplying a cleaning gas into the process container stabilized at the cleaning temperature; wherein in the removing the silicon-containing film, a heating capability of the heater and a cooling capability of the cooler are controlled based on the temperature in the process container.

Cleaning method and processing apparatus

A control device controls an operation of a processing apparatus for performing a processing in a processing container that accommodates a substrate. The control device includes: a temperature acquisition unit configured to acquire a temperature inside the processing container; a storage unit configured to store relationship information indicating a relationship between the temperature inside the processing container and an etching rate, and film thickness information including a cumulative film thickness of a deposited film inside the processing container; a rate calculator configured to calculate an etching rate of the deposited film based on the temperature acquired by the temperature acquisition unit and the relationship information stored in the storage unit; and a time calculator configured to calculate an etching time for removing the deposited film based on the etching rate calculated by the rate calculator and the film thickness information stored in the storage unit.

Control device, processing apparatus, and control method

A cleaning method includes: supplying a cleaning gas in a processing container while continuously increasing a pressure in the processing container in a stepwise manner at a plurality of time points, thereby executing a cleaning of the processing container by removing a film deposited in the processing container; and detecting an end point of the cleaning based on time-dependent data of a concentration of a predetermined gas generated during the executing the cleaning, for each pressure of the plurality of time points. The executing the cleaning is implemented when the time-dependent data of the concentration of the predetermined gas generated in the continuously increasing the pressure changes from an increasing state to a decreasing state after exceeding a threshold value.

A cleaning method for removing a film deposited in a processing container includes: executing a cleaning of a processing container by supplying a cleaning gas to the processing container while increasing a pressure in the processing container in a stepwise manner at a plurality of time points, thereby removing a film deposited in the processing container; and detecting an end point of the cleaning based on time-dependent data of a concentration of a predetermined gas generated during the execution of the cleaning, for each pressure of the plurality of time points.

A deposition method according to one aspect of the present disclosure includes performing multiple execution cycles serially. Each of the multiple execution cycles includes: supplying a raw material gas into a process chamber; and supplying a reactant gas that reacts with the raw material gas. Among the multiple execution cycles, at least one execution cycle includes adjusting a pressure in the process chamber without supplying the raw material gas, and the adjusting of the pressure is performed prior to the supplying of the raw material gas.

Deposition method

A film forming apparatus includes: a pressure-reducible processing container; a pressure gauge configured to detect a pressure in the processing container; and a controller, wherein the controller is configured to repeat a cycle including a step of adjusting a zero point of the pressure gauge and a step of executing a film forming process in the processing container until an ultimate pressure, which is detected by the pressure gauge when an interior of the processing container is evacuated to a highest reachable vacuum degree after the step of executing the film forming process, reaches a target range.

Film forming apparatus, control device, and pressure gauge adjustment method

Disclosed is a substrate processing system capable of performing an etching processing collectively on a plurality of substrates accommodated in a processing container. The system includes: a first acquisition unit which acquires, as information, an amount of a film forming material formed on one of the substrates; a second acquisition unit which acquires, as information, the number of the substrates; a first calculating unit which calculates a total amount of the film forming material formed on the substrates based on the amount of the film forming material and the number of the substrates; and a second calculating unit which calculates an etching condition required to etch and remove the entire film forming material based on the total amount of the film forming materials and a relationship between a predetermined amount of the film forming material and an etching condition.

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Iwate, Japan

Masami Oikawa