Mitsubishi Denki Kabushiki Kaisha

Canon Kabushiki Kaisha

Masami Matsumoto

Junichi Tsuchimoto

Kiyoshi Mori

Kenichi Kashiwagi

It is an object to obtain a semiconductor device free from a necessity of stacking a contact hole and a lower electrode, thus preventing occurrence of an error in stacking and enabling the capacitor to be formed precisely. Amorphous silicon 10b is deposited on a interlayer insulating film 9 including the inside portion of the contact hole 9a, and then a resist 14 is applied to the amorphous silicon 10b. Then, a mask for photolithography which has been used to form the contact hole 9a is used to perform a photolithography process to form the resist 14 to have a required shape. Then, implantation of phosphorus ions is performed such that the resist 14 is used as a mask 14a for preventing implantation of ions. Then, the amorphous silicon 10b is subjected to heat treatment to partially single crystallize the amorphous silicon 10b so that single crystal silicon 10c is grown. The difference in the etching rate between the amorphous silicon 10b and the single crystal silicon 10c is used to selectively remove the amorphous silicon 10b by using dry etching technique so that a storage node 10 is formed.

Method of manufacturing a semiconductor device having a single crystal

In the semiconductor device according to the invention, a tubular storage node is formed, then slanting rotation implantation of impurity phosphorus ions is executed for changing the phosphorus concentration and the etching rate at the thermal phosphoric acid treatment time is changed for roughening the surface under good control. Since the surface roughening does not extend to the center of the film of the storage node, the strength of the storage node can be held sufficient. Therefore, the capacitance can be increased.

Semiconductor memory and method of manufacturing thereof

An image processing apparatus includes a memory for storing data representing a digital mask pattern for extracting only a plurality of two-dimensional discrete images from a first image, a generator for generating data representing a synthesized image including a plurality of discrete two-dimensional images from the first image with the digital mask pattern, a display for displaying the synthesized image and a second image in an overlapped state, and a memory for storing data representing first and second images so that a common image portion, common to the first and second digital images is stored therein.

Growing community of inventors

Tokyo, Japan

Masami Matsumoto