Asahi Glass Company, Limited

Other

Agc Inc.

Masaki Mikami

Takashi Sugiyama

Kazuyuki Hayashi

Kazuo Kadowaki

Takeru Kinoshita

Yoshiaki Ikuta

Mitsuhiko Komakine

Hideo Sugimoto

Tomoyuki Tada

Tetsuya Uchida

Kazunobu Maeshige

Yukio Ishikawa

Makoto Kurumisawa

Tomoko Koda

Toshiya Fukuda

Mari Okazaki

Shuji Kakimoto

Takayoshi Kishimoto

Hideyuki Kanai

Yunosuke Ishikawa

Motokazu Sekine

Masahiko Shima

Kazyuki Hayashi

Masatoshi Akihara

A method for manufacturing a multilayer film-deposited substrate includes stacking a plurality of lamination units on the substrate while rotating the substrate around a rotational axis perpendicular to a substrate surface. Each of the lamination units has a plurality of layers formed by a dry deposition process. When a plurality of the multilayer film-deposited substrates are manufactured by the dry deposition process, a deposition is performed in a condition satisfying at least one of the following requirements (1) and (2), with estimating a change with time in a deposition rate: [T/T&#x3c;(m&#x2212;0.02) or (m+0.02)&#x3c;T/T] (1), and [(n&#x2212;0.02)&#x2264;T/T&#x2264;(n+0.02)] (2). m and n are independently any integer. Tis a time interval between the depositions among each layer of the plurality of layers. Tis a deposition unit time required for depositing the one lamination unit. Tis a rotation period of the substrate.

Method for manufacturing multilayer film-deposited substrate and multilayer film-deposited substrate

A mask blank for EUV lithography (EUVL) excellent in in-plane uniformity of the peak reflectivity of light in the EUV wavelength region and in in-plane uniformity of the center wavelength of reflected light in the EUV wavelength region, at the surface of a multilayer reflective film, and a process for its production, as well as a substrate with reflective layer for EUVL to be used for the production of such a mask blank for EUVL, and a process for its production. A substrate with reflective layer for EUVL having a reflective layer for reflecting EUV light formed on a substrate, where the reflective layer is a multilayer reflective film having a low refractive index layer and a high refractive index layer alternately stacked plural times.

Reflective mask blank for EUV lithography and process for its production, as well as substrate with reflective layer for such mask blank and process for its production

To provide a process for producing an EUV mask blank, whereby mixing at each interface between layers constituting a Mo/Si multilayer reflective film during a step involving heating, is suppressed, and a process for producing a reflective layer-coated substrate to be used for the production of the EUV mask blank. A process for producing a reflective layer-coated substrate for EUV lithography (EUVL), which has a step of forming a Mo/Si multilayer reflective film by alternately forming a molybdenum (Mo) layer and a silicon (Si) layer on a film-forming surface of a substrate, wherein after forming each Si layer except for a Si layer as the uppermost layer among Si layers constituting the Mo/Si multilayer reflective film, the surface of such each Si layer is exposed to a nitrogen-containing atmosphere held in a plasma state without being exposed to the air atmosphere, and then, a Mo layer is formed.

Reflective mask blank for EUV lithography, or reflective layer-coated substrate for EUV lithography, and process for its production

To provide a process for producing an EUV mask blank, whereby the deformation of a substrate due to film stress in a Mo/Si multilayer reflective film can be reduced, and the change with time of the film stress in the Mo/Si multilayer reflective film can be reduced. A process for producing a reflective mask blank for EUVL, which comprises forming a multilayer reflective film for reflecting EUV light on a film-forming surface of a substrate, then forming an absorber layer for absorbing EUV light, on the multilayer reflective film, to produce a reflective mask blank for EUV lithography, wherein the multilayer reflective film is a Mo/Si multilayer reflective film, the uppermost layer of the multilayer reflective film is a Si film, and after forming the absorber layer, the substrate on which the absorber layer is formed is subjected to heating treatment at a temperature of from 110 to 170&#xb0; C.

Reflective mask blank for EUV lithography and process for its production

A process for producing a reflective mask blank for EUV lithography (EUVL), which comprises forming a multilayer reflective film for reflecting EUV light on a film-forming surface of a substrate, then forming a protective layer for protecting the multilayer reflective film, on the multilayer reflective film, and forming an absorber layer for absorbing EUV light, on the protective layer, to produce a reflective mask blank for EUVL, wherein the multilayer reflective film is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, the absorber layer is a layer containing at least Ta and N, and after forming the Mo/Si multilayer reflective film, the protective layer is formed, and after forming a Si thin film or Si oxide thin film having a thickness of at most 2 nm on the protective layer, the absorber layer is formed.

Reflective mask blank for EUV lithography, and process for its production

Process for producing a substrate with reflective layer for EUVL, which comprises forming a reflective layer for reflecting EUV light on a substrate, wherein the reflective layer is a multilayer reflective film having a low refractive index layer and a high refractive index layer alternately stacked plural times by a sputtering method, and depending upon the in-plane distribution of the peak reflectivity of light in the EUV wavelength region in a radial direction from the center of the substrate at the surface of the multilayer reflective film, at least one layer among the respective layers constituting the multilayer reflective film is made to be a reflectivity distribution correction layer having a thickness distribution provided in a radial direction from the center of the substrate, to suppress the in-plane distribution of the peak reflectivity of light in the EUV wavelength region in a radial direction from the center of the substrate.

Provided are an EUV mask blank in which deterioration in reflectivity due to oxidation of a Ru protective layer is prevented, a reflective layer-equipped substrate to be used for producing the EUV mask blank, and a process for producing the reflective layer-equipped substrate. A reflective layer-equipped substrate for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 25 at % of nitrogen and from 75 to 99.5 at % of Si is formed between the reflective layer and the protective layer.

Reflective layer-equipped substrate for EUV lithography, reflective mask blank for EUV lithography, reflective mask for EUV lithography, and process for production of the reflective layer-equipped substrate

There are provided an EUV optical member, in which deterioration in the reflectivity due to oxidation of the Ru protective layer is prevented, a functional film-equipped substrate to be employed for production of the EUV optical member. A reflective layer-equipped substrate for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer has a three-layer structure wherein a first layer made of a Ru layer or a Ru compound layer, a second layer made of a Mo layer and a third layer made of a Ru layer or a Ru compound layer are laminated in this order on the reflective layer.

Optical member for EUV lithography

There are provided an EUV optical member, in which deterioration in the reflectivity due to oxidation of the Ru protective layer is prevented, a functional film-equipped substrate to be employed for production of the EUV optical member, and a process for producing the functional film-equipped substrate. A reflective layer-equipped substrate for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 20 at % of oxygen and from 80 to 99.5 at % of Si is formed between the reflective layer and the protective layer.

Optical member for EUV lithography, and process for production of reflective layer-equipped substrate

To provide an EUV mask blank whereby deterioration in reflectance due to oxidation of a Ru protective layer is suppressed, a functional film-attached substrate to be used for the production of the EUV mask blank, and a process for producing the functional film-attached substrate. A substrate with a reflective layer for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, between the reflective layer and the protective layer, an interlayer is formed which is composed of a first layer containing from 0.5 to 25 at % of nitrogen and from 75 to 99.5 at % of Si, and a second layer containing from 60 to 99.8 at % of Ru, from 0.1 to 10 at % of nitrogen and from 0.1 to 30 at % of Si and which has a total thickness of the first and second layers being from 0.2 to 2.5 nm, the first layer constituting the interlayer is formed on the reflective layer side, and the second layer is formed on the first layer, and the protective layer contains substantially no Si.

Substrate with reflective layer for EUV lithography and reflective mask blank for EUV lithography

Provided are a multilayer mirror for EUVL in which deterioration in reflectivity due to oxidation of a Ru protective layer is prevented, and a process for its production. A multilayer mirror for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 25 at % of nitrogen and from 75 to 99.5 at % of Si is formed between the reflective layer and the protective layer.

Multilayer mirror for EUV lithography and process for its production

Provision of a reflective mask blank for EUV lithography having an absorber layer which has a low reflectance in the wavelength regions of EUV light and pattern inspection light and whose film composition and film thickness are easily controllable to desired ones. A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B) and silicon (Si), and in the absorber layer, the content of B is at least 1 at. % and less than 5 at. % and the content of Si is from 1 to 25 at. %, and wherein the absorber layer contains no nitrogen (N) or at most 10 at. % of N.

Reflective mask blank for EUV lithography

To provide a reflective mask blank for EUV lithography having an absorber layer, which presents a low reflectance to a light in the wavelength ranges of EUV light and pattern inspection light, and which is easily controlled to have desired film composition and film thickness. A reflective mask blank for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B), silicon (Si) and nitrogen (N), and in the absorber layer, the B content is at least 1 at % and less than 5 at %, the Si content is from 1 to 25 at %, and the compositional ratio of Ta to N (Ta:N) is from 8:1 to 1:1.

To provide an EUV mask blank of which the decrease in the reflectance during EUV exposure is suppressed, and a substrate with a functional film to be used for production of such an EUV mask blank. A substrate with a reflective layer for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer formed in this order on the substrate, wherein the protective layer contains ruthenium (Ru) and at least one element selected from the group consisting of boron (B) and zirconium (Zr); and in the protective layer, the Ru content is from 70 at % to 95 at % and the total content of B and Zr is from 5 at % to 30 at %.

Reflective mask blank for EUV lithography and substrate with functional film for the same

To provide a substrate with a conductive film for an EUV mask blank having an increased surface hardness, and a substrate with a reflective multilayer film and an EUV mask blank using such a substrate with a conductive film. A substrate with a conductive film to be used for production of a reflective mask blank for EUV lithography, characterized in that the chief material of the conductive film is at least one member selected from the group consisting of Cr, Ti, Zr, Nb, Ni and V, and the conductive film contains B (boron) at an average concentration of from 1 to 70 at %.

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Tokyo, Japan

Masaki Mikami