Adeka Corporation

Masaki Enzu

Tomoharu Yoshino

Masako Hatase

Atsushi Sakurai

Akihiro Nishida

Atsushi Yamashita

Keisuke Takeda

Makoto Okabe

Nana Okada

Ryota Fukushima

Nana Sugiura

The present invention provides a ruthenium compound represented by the following general formula (1) or (2), a thin-film forming raw material containing the ruthenium compound, and a method of producing a thin-film including using the thin-film forming raw material: where Rto Reach independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing group, and 'n' represents an integer from 0 to 2, provided that at least one of Rto Rrepresents the fluorine atom-containing group; where Rto Reach independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and a total number of the carbon atoms of Rto Ris 3 or more.

Ruthenium compound, thin-film forming raw material, and method of producing thin film

Provided is a thin-film forming raw material containing a compound represented by the following formula (1): in the formula (1), Rto Reach independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom, M represents a metal atom, and 'n' represents a valence of the metal atom represented by M, provided that at least one of R, R, and Rrepresents the group containing a fluorine atom.

Compound, thin-film forming raw material that contains said compound, and method of manufacturing thin film

A ruthenium compound represented by a general formula described in the specification, a raw material which is for forming a thin film and which contains the ruthenium compound, and a method of producing a thin film using the raw material for forming a thin film are provided.

Ruthenium compound, raw material for forming thin film, and method for producing thin film

A method of the present invention for producing a metallic ruthenium thin film on a substrate by atomic layer deposition includes: (A) a step of introducing a feedstock gas containing a specific ruthenium compound into a treatment atmosphere, and allowing the ruthenium compound to deposit on the substrate; and a step of introducing a reactive gas containing a specific compound into the treatment atmosphere, and allowing the reactive gas to react with the specific ruthenium compound deposited on the substrate.

Method for producing metallic ruthenium thin film by atomic layer deposition

A diazadienyl compound represented by General Formula (I) below: wherein Rrepresents a Clinear or branched alkyl group, and M represents nickel atom or manganese atom. In particular, since a compound in which Rin General Formula (I) is a methyl group has a high vapor pressure and a high thermal decomposition starting temperature, the compound is useful as a raw material for forming a thin film by a CVD method or ALD method.

Diazadienyl compound, raw material for forming thin film, and method for manufacturing thin film

An alkoxide compound is represented by General Formula (I) below: wherein Rto Reach independently represent hydrogen, a Chydrocarbon group, etc.; Rrepresents a Chydrocarbon group, etc.; L represents hydrogen, halogen, a hydroxyl group, an amino group, an azi group, a phosphido group, a nitrile group, a carbonyl group, a Chydrocarbon group, etc.; and M represents a metal atom or a silicon atom, n represents an integer of 1 or more, m represents an integer of 0 or more, and n+m represents the valence of the metal atom or silicon atom.

Alkoxide compound, raw material for forming thin film, method for manufacturing thin film, and alcohol compound

A novel compound represented by the general formula (I) or (II) below: [in the formula, each of Rand Rindependently represent a Chydrocarbon group, and Si(R)is optionally substituted for a hydrogen atom in the hydrocarbon group; however, Rand Rare different groups; Rrepresents a methyl or ethyl group; M represents a metal atom or silicon atom; and n is an integer from 1 to 4].

Compound, thin film-forming material, and thin film manufacturing method

Disclosed is a ruthenium compound useful as a precursor in chemical vapor growth, particularly ALD. The compound has good reactivity with a reactive gas, a high vapor pressure, and a low melting point. The compound is represented by general formula (I), wherein R, R, and Reach independently represent a straight or branched chain alkyl group having 1 to 5 carbon atoms, provided that the total number of the carbon atoms of Rand Ris 3 to 10. In formula (I), Rand Rare each preferably ethyl or isopropyl.

Ruthenium compound, material for thin film formation, and process for thin film formation

The alkoxide compound of the present invention is characteristically represented by the following general formula (I): 

Alkoxide compound, thin film-forming starting material, and thin film formation method

This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), Rto Rindependently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that Rand Rare a methyl group, Rrepresents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that Ris a methyl group and Ris an ethyl group, Rrepresents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound. 

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Tokyo, Japan

Masaki Enzu