Denso Corporation

Nippondenso Co., Ltd.

Masakazu Terada

Minekazu Sakai

Tsuyoshi Fukada

Minoru Nishida

Shinsuke Watanabe

Yasutoshi Suzuki

Inao Toyoda

Koji Kondo

Toshimasa Yamamoto

Yukihiro Takeuchi

Toshio Yamamoto

Minoru Murata

Seiki Aoyama

Shinji Yoshihara

Kazushi Asami

Tomohiro Yokochi

Seiji Fujino

Satoshi Takeuchi

Hiroshi Muto

Kenichi Yokoyama

Eishi Kawasaki

Masakazu Kanosue

Hiroshige Sugito

Shoji Ozoe

Katsumi Yamazaki

In a manufacturing method of a rigid-flexible printed circuit board, slits for defining two sides of a removing portion are formed in a part of plural resin films, and the plural resin films are stacked and bonded to form a circuit board. Then, a product portion is cut from the circuit board. Before the bonding, a separation sheet is disposed between predetermined adjacent layers of the plural resin films to separate the removing portion from a residual portion of the product portion. Accordingly, while the product portion is cut from the circuit board, the removing portion is separated from the product portion, because the removing portion are defined by the separation sheet, the slits, and a cutting outline of the product portion.

Manufacturing method of rigid-flexible printed circuit board and structure thereof

In the method for manufacturing a semiconductor substrate, a concavity and a connecting hole for connecting the concavity to the outside are formed on a lower face side of a first substrate, and the first substrate is laminated with a second substrate in an atmosphere at atmospheric pressure. A diaphragm is formed by thinning the first substrate from its upper face by polishing. A sealing hole reaching to the connecting hole is formed from the upper face of the first substrate. An oxide film is formed in the sealing hole in a vacuum, whereby the connecting hole is sealed while the pressure of the pressure reference chamber is reduced to a vacuum. In this way, since the pressure reference chamber is pressure-reduced in a final stage, the diaphragm can be prevented from deforming due to pressure difference during polishing.

Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof

In a method for manufacturing a semiconductor acceleration sensor, a movable portion including a mass portion and movable electrodes is formed in a single crystal silicon thin film provided on a silicon wafer through an insulation film by etching both the single crystal silicon thin film and the silicon wafer. In this case, the movable portion is finally defined at a movable portion defining step that is carried out in a vapor phase atmosphere. Accordingly, the movable portion is prevented from sticking to other regions due to etchant during the manufacture thereof.

Method for manufacturing semiconductor dynamic quantity sensor

A method of producing a semiconductor dynamic sensor which features an improved sensitivity yet having a small size while avoiding damage to the thin distortion-producing portion. A resist film 49 is photo-patterned on the front main surface of the semiconductor substrate 41 except for the region where the upper isolation grooves are to be formed prior to forming the lower isolation groove 10 by the first etching of the back main surface of the semiconductor substrate 41 (which includes the epitaxial layer 42). Unlike the prior art, therefore, there is no need to spin-coat the front main surface of the semiconductor substrate 41 with the resist film 49 which is followed by photo-patterning after a predetermined region of the semiconductor substrate 41 has been reduced in thickness by the first etching. Therefore, damage therefore to the thin portion by the vacuum chucking the wafer during the spin-coating of the resist film is avoided.

Method of producing a semiconductor dynamic sensor

This invention relates to a method of producing an acceleration sensor of a semiconductor. Piezo resistance layers are formed in a silicon tip 2 of a single crystal etched in an anisotropic etching liquid such as a KOH solution, etc., using as a mask a silicon nitride film. Then the silicon tip 2 of the single crystal is soaked in an isotropic etching liquid for a predetermined time and is etched to a depth of 0.5-2.0 .mu.m. Further, a photoresist is applied over a whole surface thereof to form a slot extending to a hollow.

Method of producing an acceleration sensor of a semiconductor

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Tokyo, Japan

Masakazu Terada