Sanyo Electric Co., Ltd.

Sony Corporation

Renesas Electronics Corporation

National Institute of Advanced Industrial Science and Technology

Hitachi-kokusai Electric Inc.

Ulvac, Inc.

Canon Anelva Corporation

Mitsubishi Denki Kabushiki Kaisha

Panasonic Corporation

Tokyo Electron Limited

Showa Denko K.k.

Fujitsu Semiconductor Limited

Kanto Denka Kogyo Co., Ltd.

Tokyo Eectron Limited

Masaji Sakamura

Masahiro Ono

Katsuo Sakai

Kenji Kameda

Hitoshi Murata

Kaoru Abe

Akira Sekiya

Seiji Okura

Etsuo Wani

Toshiharu Matsuda

Yutaka Ohira

Yuki Mitsui

Taisuke Yonemura

A CVD apparatus cleaning method that efficiently removes by-product such as SiOor SiNadhered to and deposited on surfaces of an inner wall, an electrode, and the like in a reaction chamber at a film forming step. In the cleaning method the discharged cleaning gas amount is very small, environmental influences such as global warming can be lessened, and cost can be reduced. A CVD apparatus supplying reactive gas into a reaction chamber and forming a deposited film on a surface of a base material provided in the reaction chamber includes an exhaust gas recycling path recycling an exhaust gas reaching the reaction chamber from downstream of a pump on an exhaust path for exhausting a gas from an inner part of the reaction chamber through the pump.

CVD apparatus and method of cleaning the CVD apparatus

An apparatus for cleaning a CVD apparatus that can efficiently remove a by-product such as SiOor SiNstuck and deposited onto the surface of an internal wall, an electrode, or the like in a reaction chamber in a film forming process, and a method for cleaning a CVD apparatus. A control monitors luminous intensity data of an F radical in a reaction chamber by optical emission spectroscopy and compares the data with calibrated prestored luminous intensity data, and ends cleaning after a predetermined time passes from reaching a luminous intensity saturation point. Furthermore, concentration data of SiFin a gas discharged from the reaction chamber are monitored by a Fourier transform infrared spectrometry and compared with prestored concentration data of SiFto decide that the predetermined time has passed when a predetermined cleaning end point concentration is reached, thereby ending the cleaning.

Device for cleaning CVD device and method of cleaning CVD device

A first convex portion and a second convex portion are formed on a semiconductor substrate at a prescribed interval, an impurity diffusing region is formed on an upper portion of the semiconductor substrate placed between the first and second convex portions, and a thinned first polysilicon film is formed on the impurity diffusing region and the first and second convex portions. Thereafter, arsenic ions are implanted into the first polysilicon film to make the first polysilicon film conductive. Thereafter, a second polysilicon film having a film thickness larger than that of the first polysilicon film is formed, and phosphorus ions are implanted into the second polysilicon film to make the second polysilicon film conductive. Thereafter, a tungsten silicide film is formed on the second polysilicon film, and the tungsten silicide film and the first and second polysilicon films are patterned. Therefore, a two-layer structured electrode wiring film composed of a patterned tungsten silicide film and a combination of a patterned first polysilicon film and a patterned second polysilicon film is formed. Because the first polysilicon film is thinned, the first polysilicon film can be sufficiently conductive. Therefore, the first polysilicon film is electrically connected with the second polysilicon film on the first and second convex portions even though the second polysilicon film is not sufficiently conductive, and the electrode wiring film can be electrically connected with the impurity diffusing region.

Manufacturing method of semiconductor apparatus

Manufacturing method of a semiconductor eprom device

Growing community of inventors

Tokyo, Japan

Masaji Sakamura