Hitachi-high-technologies Corporation

Sony Corporation

Hitachi, Ltd.

Hitachi High-tech Corporation

Saturn Licensing LLC

Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Sony Group Corporation

Hitachi High-technologies Corpoartion

Masahito Mori

Takao Arase

Kenetsu Yokogawa

Naoshi Itabashi

Yuichi Morioka

Yasuaki Yamagishi

Shinichi Tachi

Masakazu Isozaki

Taku Iwase

Naoyuki Kofuji

Takeshi Itagaki

Eisuke Sakai

Tomoya Yamaura

Masaru Izawa

Mikito Ogata

Ken'etsu Yokogawa

Michio Miyazaki

Takashi Doi

Satoshi Terakura

Naohisa Kitazato

Masanori Sato

Yoshiharu Dewa

Keizo Suzuki

Satoshi Takagi

Tetsuo Ono

Motohiko Yoshigai

Masao Sasaki

Kazunori Tsujimoto

Koichi Yamamoto

Takamasa Ichino

Akira Hirata

Satoshi Une

Katsunori Hashimoto

Hayato Watanabe

Takahisa Hashimoto

Yuusuke Takegawa

Junichi Tanaka

Hiroshi Nakano

Hideyuki Kazumi

Hiroaki Suzuki

Seiichiro Kanno

Yuki Kondo

Go Miya

Kazutami Tago

Toyohiro Kobayashi

Ryota Takahashi

Kazunori Nakamoto

Makoto Tanikawa

Toru Ito

Nobuyuki Negishi

Go Saito

Takafumi Oka

Hitoshi Kobayashi

Hitoshi Tanifuji

Isao Kawasaki

Toshiaki Nishida

Yoshihiro Iwasaki

Shunji Tsuboi

Yoshihiko Kikkawa

Takahiro Ishigami

Yousuke Sakai

Chaomei Liu

Junichi Sayama

Ryuta Machida

Tadamitsu Kanekiyo

Ryo Ishimaru

Katsushi Yagi

Masaru Sugita

Mitsuru Shinma

In order to be able to independently control a plasma density distribution both in a distribution with high center and a nodal distribution, and perform a plasma processing on a sample with higher accuracy for processing uniformity, a plasma processing apparatus includes: a vacuum vessel in which a plasma processing is performed on a sample; a radio frequency power source configured to supply radio frequency power for generating plasma; a sample stage on which the sample is placed; and a magnetic field forming unit configured to form a magnetic field inside the vacuum vessel and disposed outside the vacuum vessel, in which the magnetic field forming unit includes: a first coil; a second coil that is disposed closer to an inner side than the first coil and has a diameter smaller than a diameter of the first coil; a first yoke that covers the first coil, and an upper side and a side surface of the vacuum vessel, and in which the first coil is disposed; and a second yoke that covers the second coil along a peripheral direction of the second coil and has an opening below the second coil.

Plasma processing apparatus

In a plasma processing method for plasma etching a silicon film or polysilicon film containing boron, the polysilicon film containing boron is etched by using a mixed gas of a halogen gas, a fluorine-containing gas, and a boron trichloride gas. According to plasma processing method, it is possible to improve the etching rate and reduce etching defects when plasma etching a silicon film or polysilicon film containing boron.

Plasma processing method

A wireless communication device including: a wireless communication unit configured to perform wireless communication with another wireless communication device in accordance with an IEEE 802.11 standard; and a control unit configured to control the wireless communication unit so that the wireless communication unit includes schedule information in a PLCP header defined in the IEEE 802.11 standard and transmits the schedule information to the other wireless communication device, the schedule information relating to orthogonal frequency-division multiple access.

Wireless communication device and method of wireless communication for improving the utilization efficiency of radio resources

In order to implement a plasma etching method for improving a tapered shape, a plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing; a first radio frequency power source that supplies radio frequency power for generating a plasma; a sample stage on which the sample is placed; a second radio frequency power source that supplies radio frequency power to the sample stage; and a control unit that controls the first radio frequency power source and the second radio frequency power source so as to etch a stacked film formed by alternately stacking a silicon oxide film and a polycrystalline silicon, or a stacked film formed by alternately stacking a silicon oxide film and a silicon nitride film, by using a plasma generated by a mixed gas of a hydrogen bromide gas, a hydrofluorocarbon gas and a nitrogen element-containing gas.

Plasma processing apparatus and plasma processing method

Provided is a plasma processing method for selectively removing, after plasma etching using a mask having an amorphous carbon film containing boron, the amorphous carbon film using plasma from a silicon nitride film, a silicon oxide film or a tungsten film. The plasma processing method includes a removing step of removing the amorphous carbon film using plasma generated by mixed gas of Ogas and CHF gas, or CHFgas.

Plasma processing method and plasma ashing apparatus

Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatusincludes a first electrode (a base materialB) disposed in a sample stage, a ring-shaped second electrode (a conductive ring) disposed surrounding an outer peripheral side of an upper surface portion(a dielectric film portionA) of the sample stage, a dielectric ring-shaped member (a susceptor ring) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching devicedisposed on a power supply path to the second electrode. Further, a first position (A) and a grounding position between the second electrode and the matching deviceon the power supply path to the second electrode are electrically connected via a resistorhaving a predetermined value.

Disclosed herein is a plasma processing apparatus including: a processing chamber in which a sample is to be processed using plasma; a radio-frequency power source that supplies radio-frequency power for producing the plasma; and a sample stage on which the sample is to be mounted, the plasma processing apparatus further including a control unit that performs control so that plasma is produced after applying a DC voltage for electrostatically attracting the sample to the sample stage to each of two electrodes placed on the sample stage, and a heat-transfer gas for adjusting a temperature of the sample is supplied to a back surface of the sample after production of the plasma.

A wireless communication device that includes circuitry that receives a physical layer (PHY) header from a first wireless communication device belonging to a first wireless communication network different from a second wireless communication network to which the wireless communication device belongs, and controls transmission power on a basis of allowance signal information obtained in reception of the PHY header, and the PHY header includes the allowance signal information in which allowance of another signal for signal reception in a first destination wireless communication device which is a destination of a frame subsequent to the PHY header is specified.

Wireless communication device and wireless communication method

A plasma processing apparatus with improved yield, adapted to include a vacuum container, a processing chamber disposed inside thereof, and in which a plasma is formed, a sample table disposed in the processing chamber and on which a sample is placed, two electrodes which have a film shape, disposed within the sample table, and to which power for attracting the sample is supplied so that different polarities are formed, a coiled portion in which two power supply lines are wound in parallel around the same axis, and a bypass line which connects the two power supply lines between the coiled portion and the two electrodes and has a capacitor.

Ring for a plasma processing apparatus

Data communication is performed appropriately. An information processing apparatus includes a control unit. In a case of transmitting data by using wireless communication, the control unit performs control of performing transmission while including determination information with which a device in a transmission destination of the data determines in a data link layer whether to pass the data to a higher layer of the data link layer into the data. Also, in a case of receiving data by using wireless communication, the control unit performs control of determining whether to pass the data to a higher layer of a data link layer on the basis of information included in the data (determination information that can be grasped in data link layer).

Information processing apparatus, information processing method, and program

A plasma processing apparatus having a stable plasma generation under wide-ranging process conditions, and superior in uniformity and reproducibility, comprises an upper electrodehaving gas supply through holes, a gas supply means and a lower electrode, wherein the gas supply means includes a plane-like memberhaving gas through holesand a plane-like memberhaving gas through holes, and the gas supply through holesand the gas through holesare connected through a groove, and the gas through holesand the gas through holesare connected through a groove, and wherein the gas supply through holes, the gas through holesand the gas through holesare disposed at positions, different from each other on a plane.

The present disclosure relates to a content supply apparatus, a content supply method, a program, a terminal apparatus, and a content supply system that allow to provide a receiver with pieces of general required network quality information for respective delivery paths for a case of supplying pieces of content of the same content through a plurality of different delivery paths. A content supply apparatus of the present disclosure delivers streams of content through a plurality of different networks, respectively, according to an adaptive streaming technique, and includes: a generating unit that generates metadata describing QoS parameters for the respective plurality of different networks through which the streams are delivered, and condition values of the QoS parameters; and a delivering unit that delivers the generated metadata to a receiver. The present disclosure can be applied to a system that streams content.

Content supply apparatus, content supply method, program, terminal apparatus, and content supply system

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Tokyo, Japan

Masahito Mori