Anelva Corporation

Canon Anelva Corporation

Masahito Ishihara

Shigeru Mizuno

Nobuyuki Takahashi

Sunil Wickramanayaka

Naoki Miyazaki

Masahiko Kobayashi

Yoichiro Numasawa

Manabu Tagami

Hajime Sahase

Hiroshi Doi

Kazuhito Watanabe

Naoyuki Nozawa

Shinya Hasegawa

Kiyoshi Nashimoto

Reiji Sakamoto

Yoshikazu Nozaki

Nobuo Matsuki

A deposition apparatus includes a chamber, a holding unit configured to hold a substrate in the chamber, a driving unit configured to move the holding unit holding the substrate such that the substrate passes through a deposition area in the chamber, a deposition unit configured to form a film on the substrate passing through the deposition area by supplying a deposition material to the deposition area, and a cooling unit configured to cool the holding unit.

Deposition apparatus

An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.

Electrostatic chuck device

A plasma processing system includes a reactor, a top electrode made of a magnetic or ferromagnetic metal or a metal-alloy, wherein a RF or DC power is applied to generate plasma within the reactor; a gas showerhead fixed to the top electrode; a sheet-like magnetic assembly bound to the upper surface of the gas showerhead, which includes a plurality of separate magnets, a metal sheet made of a ferromagnetic metal, and a deformable film.

Device for fixing a gas showerhead or target plate to an electrode in plasma processing systems

This application discloses a substrate heating apparatus comprising a partition separating the inside of a load-lock chamber into two areas. An inside opening provided in the partition is closed by a partition valve, while the second area in which a substrate is transferred is evacuated at a vacuum pressure by a pumping line. After the partition valve is opened, a carrier carries the substrate through the inside opening, thereby contacting the substrate onto a heat body disposed in the first area. Otherwise, after the partition valve is opened, a carrier carries a heat body through the inside opening, thereby contacting the substrate onto the heat body in the second area. This application also discloses a substrate processing system comprising a transfer chamber, and a load-lock chamber and a process chamber both provided on the periphery of the transfer chamber.

Substrate heating apparatus and multi-chamber substrate processing system

The present invention provides a substrate processing apparatus having improved temperature distribution on a block heater and improved productivity. The substrate processing apparatus includes a reactor having an exhaust unit to form a vacuum environment therein for processing a surface of a substrate, a support member provided in the reactor, and gas introduction units for introducing reactive gases into the reactor, the substrate support member including a block heater. The block heater has upper, intermediate and lower members, which are placed one over another, the faying surfaces of the respective members being joined by diffusion bonding. A heating member is provided between the intermediate and lower members, and purge gas passages are formed between the intermediate and upper members.

Substrate processing apparatus

A substrate processing device includes a reactor equipped with a substrate holder and a gas feed electrode facing the substrate holder, a pump mechanism for pumping out an interior of the reactor, a reaction gas feed mechanism for introducing a reaction gas through the gas feed electrode into the interior of said reactor, a high frequency power source for applying a high frequency power to said gas feed electrode, a connecting port formed in a sidewall of said reactor, the pump mechanism is connected to the connecting port formed in the sidewall of the reactor, and a space between the gas feed electrode and the substrate holder is set so that a conductance between the gas feed electrode and the substrate holder is lower than a conductance between the sidewall of the reactor and the gas feed electrode.

A method of depositing a thin film on a substrate by plasma-enhanced CVD is provided. The method includes introducing H.sub.2 or H.sub.2 and N.sub.2 into a plasma-enhanced CVD reactor; generating a plasma in the reactor; introducing a reaction gas comprising TiCl.sub.4, silane, and either H.sub.2 or H.sub.2 and N.sub.2 into the reactor; and depositing a Ti film or a TiN film containing Si on a substrate in the reactor.

Method of depositing thin films by plasma-enhanced chemical vapor

A sputtering apparatus is provided with a magnetic assembly which is rotated and revolved, and the eccentric distance between the rotation axis and the revolution axis is varied. By this arrangement, erosion profile of a target is made uniform, whereby a uniform thin film is deposited on a substrate surface.

Sputtering apparatus

A multichamber sputtering apparatus which is used for manufacturing a semiconductor device and the like. In the apparatus, a plurality of sputter chambers and a degas chamber are airtightly connected to and arranged around a center transfer chamber, and processes including sputtering are continuously conducted in a vacuum. A plurality of heat stages are disposed in the degas chamber so that a plurality of substrates are simultaneously heated. In each heat stage, as required, a heating gas introducing unit for introducing a heating gas with causing the heating gas to make contact with the rear face of the substrate, a pressing mechanism which presses the substrate against the heat stage so as to enhance the surface contact between the heat stage and the substrate, or an electrostatic chucking mechanism is disposed.

Multichamber sputtering apparatus

A CVD apparatus is equipped with a reactor, a substrate holder, an evacuation section, a reactive gas supply mechanism, a heating mechanism for heating the substrate holder, a differential pressure chuck clamping section for clamping the substrate, and a purge gas supply mechanism for supplying purge gas. The substrate holder is configured to have a circular purge gas blowing channel on the top surface thereof, in which a diameter of an outside wall-surface is less than a diameter of the substrate, and a plurality of purge gas passages in an inside thereof, each of which supplies the purge gas into the purge gas blowing channel. The purge gas passing the purge gas blowing channel is blown off through a clearance between the outer periphery of the substrate and the substrate holder. The purge gas passage includes a radius-directed part directed in a radius direction of the substrate holder and has a purge gas outlet provided on the outside wall-surface of the purge gas blowing channel. The flow of the purge gas in a circumferential direction within the purge gas blowing channel is turbulent and dispersed, and therefore the purge gas blow-off pressure in the whole periphery of the substrate is uniform.

Growing community of inventors

Fuchu, Japan

Masahito Ishihara