Nissan Chemical Corporation

Thin Film Electronics Asa

Nissan Chemical Industries Limited

Masahisa Endo

Gun Son

Yuichi Goto

Makoto Nakajima

Hiroyuki Wakayama

Kentaro Nagai

Wataru Shibayama

Kenji Takase

Kentaro Negai

Provided is a resist underlayer film-forming composition for forming resist underlayer film usable as hard mask and removable by wet etching process using chemical solution such as sulfuric acid/hydrogen peroxide. A resist underlayer film-forming composition for lithography includes a component (A) and component (B), the component (A) includes a hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, the hydrolyzable silane includes hydrolyzable silane of Formula (1): RRSi(R)(where Ris organic group of Formula (2): and is bonded to silicon atom through a Si&#x2014;C bond; Ris an alkoxy group, acyloxy group, or halogen group; is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3), and the component (B) is cross-linkable compound having ring structure having alkoxymethyl group or hydroxymethyl group, cross-linkable compound having epoxy group or blocked isocyanate group.

Composition for forming silicon-containing resist underlayer film removable by wet process

A novel monothioglycoluril compound and a novel dithioglycoluril compound. A thioglycoluril compound of the following Formula (1): (wherein X is an oxygen atom or a sulfur atom, and four Rs are each a hydrogen atom, a linear, branched, or cyclic alkyl group having a carbon atom number of 1 to 4, a phenyl group, a naphthyl group, a benzyl group, or a C3-9 alkyl group having at least one ether bond on the main chain).

Thioglycoluril compound, and method for producing same

A film-forming composition having favorable effects such as curability and embeddability and resist underlayer film for use in lithography process for semiconductor devices. The film-forming composition including, as silane, hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, wherein hydrolyzable silane includes hydrolyzable silane of Formula (1):RRSi(R)&#x2003;&#x2003;Formula (1)in Formula (1), Ris organic group of Formula (2) and is bonded to silicon atom through Si&#x2014;C bond: The film-forming composition, wherein the hydrolyzable silane is combination of hydrolyzable silane of Formula (1) with another hydrolyzable silane, wherein other hydrolyzable silane is at least one selected from group made of hydrolyzable silane of Formula (3):RSi(R)&#x2003;&#x2003;Formula (3)and hydrolyzable silane of Formula (4):RSi(R)Y&#x2003;&#x2003;Formula (4)Resist underlayer film, obtained by applying the resist underlayer film-forming composition on semiconductor substrate and baking.

Film-forming composition containing silicone having crosslinking reactivity

There are provided novel glycolurils, and methods for producing the same. A nitrogen-containing cyclic compound of following formula (1):  (wherein any two of R, R, R, and Rare glycidyl groups, and the remaining two are methoxymethyl groups), and the nitrogen-containing cyclic compound of formula (1) is represented by, for example, following formula (1A) or (1B): 

Nitrogen-containing cyclic compounds and methods for producing the same

There are provided a novel isocyanurate compound having a glycidyl group as a substituent to be bonded to a nitrogen atom. A monoglycidyl isocyanurate compound of the following Formula (1), (2), or (3). (wherein two Rs are each a Calkyl group, two Rs are each a Calkylene group, two Rs are each a Calkyl group, two Rs are each a Calkylene group, and two Rs are each a Calkyl group).

Monoglycidyl isocyanurate compound and production method therefor

A novel monothioglycoluril compound and a novel dithioglycoluril compound. A thioglycoluril compound of the following Formula (1): (wherein X is an oxygen atom or a sulfur atom, and four Rs are each a hydrogen atom, a linear, branched, or cyclic alkyl group having a carbon atom number of 1 to 4, a phenyl group, a naphthyl group, a benzyl group, or a Calkyl group having at least one ether bond on the main chain).

There is provided a highly conductive and good silicon thin film which is obtained by applying a coating-type polysilane composition prepared by use of a polysilane having a large weight average molecular weight to a substrate, followed by baking. A polysilane having a weight average molecular weight of 5,000 to 8,000. The polysilane may be a polymer of cyclopentasilane. A silicon film obtained by applying a polysilane composition in which the polysilane is dissolved in a solvent to a substrate, and baking the substrate at 100&#xb0; C. to 425&#xb0; C. The cyclopentasilane may be polymerized in the presence of a palladium catalyst supported on a polymer. The palladium catalyst supported on a polymer may be a catalyst in which palladium as a catalyst component is immobilized on a functional polystyrene. The palladium may be a palladium compound or a palladium complex. The palladium-immobilized catalyst may be formed by microencapsulating a zero-valent palladium complex or a divalent palladium compound with a functional polystyrene. The zero-valent palladium complex may be a tetrakis(triphenylphosphine)palladium (0) complex.

High-molecular-weight polysilane and method for producing same

A method of producing a silicon hydride oxide-containing organic solvent (coating solution) is provided with which a silicon hydride oxide coating film can be formed on a substrate. Using the silicon hydride oxide-containing organic solvent makes it unnecessary to place a coating solution in non-oxidizing atmosphere at the time of coating or to heat the substrate after coating because the silicon hydride oxide is formed in the coating solution before it is coated. The method includes blowing an oxygen-containing gas through an organic solvent containing a silicon hydride or a polymer thereof. The silicon hydride oxide may contain a proportion of (residual Si-H groups)/(Si-H groups before oxidation) of 1 to 40 mol %. The silicon hydride can be obtained by reacting a cyclic silane with a hydrogen halide in the presence of an aluminum halide, and reducing the obtained cyclic halosilane.

Method of producing silicon hydride oxide-containing solvent

A cyclic silane having high purity, a composition containing a polysilane obtained by polymerization of the cyclic silane, and a silicon thin film are disclosed. A method for producing a cyclic silane of the formula (SiH), where n is an integer of 4 to 6, includes reacting a cyclic silane compound of the formula (SiRR)(where Rand Rare each a hydrogen atom, a Calkyl group, or a substituted or unsubstituted phenyl group) with a hydrogen halide in the presence of an aluminum halide to obtain a cyclic silane of the formula (SiRR)(where Rand Rare each a halogen atom), and then distilling the solution, and reducing the cyclic silane of the formula (SiRR)with hydrogen or lithium aluminum hydride. The distillation may be carried out at a temperature of 40&#xb0; C. to 80&#xb0; C. under a reduced pressure of 0 to 30 Torr.

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Toyama, Japan

Masahisa Endo