Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Panasonic Holdings Corporation

Panasonic Intellectual Property Management Co., Ltd.

Masahiro Ogawa

Masahiro Ishida

Satoshi Tamura

Daisuke Shibata

Masaaki Yuri

Masaya Mannoh

Mayu Ogawa

Daisuke Ueda

Kenji Nakamura

Ryo Kajitani

Masahiro Hojo

Shinji Nakamura

Hirokazu Shimizu

Kenji Orita

Toshinobu Hatano

Osamu Imafuji

Shinichi Takigawa

Shinji Ujita

Kunihiro Imamura

Taichi Nagata

Nanako Hirashita

Mayu Nishikawa

Minako Shimizu

Tomokazu Uchida

Nozomi Tanaka

Ryuichi Miyakoshi

Ryosuke Uematsu

Michiko Morita

Hiroki Yoshikawa

Yoshiaki Mimata

A nitride semiconductor device includes: a substrate; an n-type drift layer; a p-type blocking layer; a gate opening which penetrates through the blocking layer to the drift layer; an electron transport layer and an electron supply layer provided on an inner face of the gate opening; a gate electrode above the electron supply layer and covering the gate opening; a source opening penetrating through the electron supply layer and the electron transport layer to the blocking layer; a source electrode covering the source opening, the source electrode being connected to the electron supply layer, the electron transport layer, and the blocking layer; and a drain electrode on a side of the substrate opposite from a side on which the blocking layer is located. A bottom face of the gate electrode is closer to the drain electrode than a bottom face of the blocking layer is.

Nitride semiconductor device

A nitride semiconductor device includes a substrate, a first electron transport layer above the substrate, a first electron supply layer above the first electron transport layer, a first nitride semiconductor layer above the first electron supply layer, a first opening passing through the first nitride semiconductor layer and the first electron supply layer and reaching the first electron transport layer, a second electron transport layer disposed above the first nitride semiconductor layer and along the inner surface of the first opening, a second electron supply layer disposed above the second electron transport layer and covering the first opening, a gate electrode disposed above the second electron supply layer and covering the first opening, a source electrode connected to the first nitride semiconductor layer and the second electron transport layer, and a drain electrode.

Nitride semiconductor device includes: a substrate; a first nitride semiconductor layer of a first conductivity above the substrate; a second nitride semiconductor layer of a second conductivity different from the first conductivity, above the first nitride semiconductor layer; a first opening penetrating through the second nitride semiconductor layer; an electron transport layer and an electron supply layer disposed along inner surfaces of the first opening, in stated sequence from the substrate-side; a gate electrode above the electron supply layer, covering the first opening; a source electrode connected to the electron supply layer and the electron transport layer, at a position separated from the gate electrode; and a drain electrode on a surface of the substrate opposite to a surface on which the first nitride semiconductor layer is disposed. At least part of the second nitride semiconductor layer is fixed to a potential different from a potential of the source electrode.

A nitride semiconductor device includes: a substrate having a first main surface and a second main surface; a first nitride semiconductor layer of a first conductivity type provided above the first main surface; a second nitride semiconductor layer of a second conductivity type provided above the first nitride semiconductor layer; a first opening which penetrates through the second nitride semiconductor layer to the first nitride semiconductor layer; an electron transport layer provided above the second nitride semiconductor layer and on an inner surface of the first opening; a gate electrode provided above the electron transport layer and covering the first opening; a source electrode connected to the second nitride semiconductor layer; a drain electrode provided on a second main surface-side of the substrate; and a high-resistance layer provided between the second nitride semiconductor layer and the electron transport layer in the first opening, the high-resistance layer including a nitride semiconductor.

A semiconductor relay includes: a light-emitting element; and a light-receiving element facing the light-emitting element. The light-receiving element includes: a substrate; a semiconductor layer having a direct transition type, the semiconductor layer being disposed on the substrate and having a semi-insulating property; a first electrode having at least a part in contact with the semiconductor layer; and a second electrode having at least a part in contact with either one of the semiconductor layer and the substrate, in a position separated from the first electrode. The semiconductor layer is reduced in resistance by absorbing light from the light-emitting element.

Semiconductor relay

Provided is a semiconductor device in which electron mobility is improved by applying sufficiently large tensile stress in a predetermined direction without occurrence of cracks in a nitride semiconductor. The semiconductor device includes: substrate (), electron transit layer () that is disposed on substrate () and is formed by GaN; and electron supply layer () that is disposed on electron transit layer () and is formed by AlGaN. A coefficient of thermal expansion of substrate () is different between a first direction in a main surface of substrate () and a second direction that is perpendicular to the first direction in the main surface, and tensile stress occurs in electron transit layer ().

Semiconductor device

An image processor detects an on-screen motion of a photographic subject in video image data generated by an image sensor provided in a camera body and outputs a photographic subject motion information. A sensor detects a motion of the camera body and outputs the detected motion as a camera body motion information. A scene decision encoding controller decides an image pickup condition of the video image data based on the photographic subject motion information and the camera body motion information, and performs an encoding amount regulation control suitable for the decided image pickup condition to an image compression processor.

Video image pickup device

A compression controller is capable of executing prediction mode selection for selecting any one of forward prediction, backward prediction, or bidirectional prediction as a prediction mode used for encoding based on spatial frequencies of an image to be encoded. The compression controller determines whether or not to execute the prediction mode selection based on image mobility information indicating an amount of motion in the image to be encoded.

Image encoder and camera system

A communication processor sets a storage request signal to be effective when it is judged that a packet cannot be transmitted and sets the storage request signal to be ineffective when it is judged that the packet can be transmitted. A data processor makes a buffer memory store encoded data therein when it is confirmed that the storage request signal is effective. The data processor reads the encoded data from the buffer memory and transmits the read encoded data to a packet generator when it is confirmed that the storage request signal is ineffective and the encoded data is stored in the buffer memory. The data processor receives the encoded data from the encoder and transmits the received encoded data to the packet generator when it is confirmed that the storage request signal is ineffective and the encoded data is not stored in the buffer memory.

Moving image communication device, moving image communication system and semiconductor integrated circuit used for communication of moving image

A characteristic detecting unit detects characteristics of a digital imaged signal at every phase shift interval set in advance. A timing adjustment unit gives a phase adjustment instruction of a pulse so as to converge to an imaging phase in the digital imaged signal at which the characteristics are a predetermined value or within a predetermined range. A shift interval switching unit switches the phase shift interval according to photographing conditions of an imaging element.

Phase adjusting device and related art thereof

The timing adjustment unit gives a phase adjustment instruction of the pulse to the imaging device so as to converge to an optimum phase of the pulse set based on the calculation results of the luminance level detecting unit and the variance calculating unit. Furthermore, the timing adjustment unit controls the imaging device so that an exposure state of the analog imaged signal is suited for a luminance level detection process by the luminance level detecting unit and the variance calculation process by the variance calculating unit.

Phase adjusting device and digital camera

Suppress deterioration in picture qualities while achieving expansion in a dynamic range. An image sensor readout method that reads out, from an area sensor where a plurality of image pickup elements are arranged in matrix, signal charges that are accumulated in the image pickup elements is constituted as follows. First, plural kinds of exposure time different in length from each other are set, and the exposure time is then individually allocated to each line of the area sensor. Next, the signal charges accumulated in the image pickup elements in the allocated exposure time are read out through a line unit of the area sensor. Then, the read out signal charges are synthesized through a screen unit of the area sensor.

Method for reading out signal charges from an image sensor having different exposure times

An intended-usage judger judges an intended usage of an inputted digital imaging signal. A selector selects one or a plurality of signals to be inspected from a group of signals constituting the digital imaging signal based on a result of the judgment by the intended-usage judger. A phase adjuster adjusts a phase of a pulse used when the digital imaging signal is picked up based on an output state of the signal to be inspected.

Phase adjustment device, phase adjustment method and digital camera

An image reproduction method includes: a reduced-size image reading step of reading a plurality of reduced-size images from a recording medium and storing the reduced-size images in a memory; a display step of multi-displaying the plurality of reduced-size images on a monitor; a cursor movement detection step of detecting a moving speed of a cursor indicating a selected reduced-size image from the plurality of reduced-size images displayed on the monitor; and an image read-ahead step of reading images from the recording medium according to the moving speed of the cursor and storing the image in the memory.

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Osaka, Japan

Masahiro Ogawa