Screen Holdings Co., Ltd.

Dainippon Screen Mfg. Co., Ltd.

Fujitsu Corporation

Dainippon Screen Manufacturing Co., Ltd.

Masahiro Miyagi

Toru Endo

Hiroyuki Araki

Masanobu Sato

Koji Hashimoto

Kenichiro Arai

Hirofumi Masuhara

Masanori Suzuki

Nobuo Kawase

Tomokatsu Sato

Kazuhiro Watanabe

Hiroaki Takahashi

Kenya Morinishi

Mitsukazu Takahashi

Takayoshi Tanaka

Yasuhiro Mizohata

Hideaki Matsubara

Kazuo Kinose

Mitsuaki Yoshitani

Kazunori Fujikawa

Ryuichi Hayama

Katsunaga Narita

Koji Kizaki

Satoru Tanaka

Naoshige Itami

A processing liquid supplying apparatus is arranged to discharge a processing liquid from a discharge port to supply the processing liquid to a processing object, and the processing liquid supplying apparatus includes a first piping, through the interior of which the processing liquid can flow, the interior of the first piping being in communication with the discharge port, and an X-ray irradiating means irradiating X-rays onto the processing liquid present inside the first piping. The first piping has an opening in its pipe wall and the opening is closed by a window member formed using a material that can transmit the X-rays, and the X-ray irradiating means irradiates the X-rays onto the processing liquid present inside the first piping via the window member.

Processing fluid supply device, substrate processing device, processing fluid supply method, substrate processing method, processing fluid processing device, and processing fluid processing method

A substrate processing apparatus has a cup part for receiving processing liquid such as pure water which is splashed from a substrate. The cup part is formed of electrical insulation material. Hydrophilic treatment may be performed on an outer annular surface of the cup part. Water is held on at least one surface of the cup part while processing the substrate. The water may be substantially grounded. With the disclosed apparatus, charged potential of the cup part generated by splashing of pure water can be suppressed, without greatly increasing the manufacturing cost of the substrate processing apparatus. As a result, it is possible to prevent electric discharge from occurring on the substrate due to induction charging of the substrate, in application of the processing liquid onto the substrate.

Substrate processing apparatus

A substrate processing method in a substrate processing apparatus that has a cup part for receiving processing liquid such as pure water which is splashed from a substrate. The cup part is formed of electrical insulation material. Hydrophilic treatment may be performed on an outer annular surface of the cup part. Water is held on at least one surface of the cup part while processing the substrate. The water maybe substantially grounded. With the disclosed method, charged potential of the cup part generated by splashing of pure water can be suppressed, without greatly increasing the manufacturing cost of the substrate processing apparatus. As a result, it is possible to prevent electric discharge from occurring on the substrate due to induction charging of the substrate, in application of the processing liquid onto the substrate.

Substrate processing method

In a substrate processing apparatus, with an internal space of a chamber brought into a pressurized atmosphere, an etching process is performed by continuously supplying a first processing liquid onto an upper surface of a substrate while rotating the substrate. It is thereby possible to suppress vaporization of the first processing liquid on the substrate and further suppress a decrease in the temperature of the substrate due to the heat of vaporization as it goes from a center portion of the substrate toward a peripheral portion thereof as compared with under normal pressure. As a result, it is possible to improve the uniformity in the temperature of the upper surface of the substrate during the etching process using the first processing liquid and improve the uniformity of etching over the entire upper surface of the substrate.

Substrate processing apparatus and substrate processing method

In a substrate processing apparatus, a temperature of an anti-static liquid having electrical resistivity which gradually decreases as a liquid temperature increases is adjusted by a temperature adjustment part and the electrical resistivity of the anti-static liquid is higher than the electrical resistivity of a processing liquid (SPM liquid). After that, a plurality of substrates are immersed in the anti-static liquid inside the anti-static liquid storage part and both main surfaces of each substrate entirely conic into contact with the anti-static liquid. This gradually removes static electricity from the substrate. Then, the SPM liquid is supplied onto an upper surface of the substrate to thereby perform an SPM process. In the SPM process, it is thereby possible to prevent a large amount of electric charges from sharply moving from the substrate to the SPM liquid and prevent any damage to the substrate.

A substrate processing apparatus has a cup part for receiving processing liquid such as pure water which is splashed from a substrate. The cup part is formed of electrical insulation material or semiconductor material. Hydrophilic treatment may be performed on an outer annular surface of the cup part and water may be held on the outer annular surface of the cup part while processing the substrate. With the disclosed apparatus, charged potential of the cup part generated by splashing of pure water can be suppressed, without greatly increasing the manufacturing cost of the substrate processing apparatus. As a result, it is possible to prevent electric discharge from occurring on the substrate due to induction charging of the substrate, in application of the processing liquid onto the substrate.

A substrate processing apparatus comprising a substrate holding rotating mechanism, a process liquid supply mechanism having a nozzle for dispensing a process liquid toward a principal face of the substrate, a processing liquid reservoir for holding sufficient process liquid to form a liquid film covering the whole principal face of the substrate, a liquid film forming unit for forming the liquid film by supplying the process liquid onto the principal face of the substrate in a single burst, and a control unit for controlling the liquid film forming unit and the process liquid supply mechanism such that the process liquid is dispensed from the process liquid nozzle toward the principal face of the substrate after formation of the liquid film covering the whole area of the principal face of the substrate by the liquid film forming unit.

In a substrate processing apparatus, with an internal space of a chamber brought into a reduced pressure atmosphere, a first processing liquid is supplied onto an upper surface of a substrate while the substrate is rotated, and the first processing liquid is thereby quickly spread from a center portion toward a peripheral portion on the upper surface of the substrate. It is thereby possible to coat the upper surface of the substrate with the first processing liquid in a shorter time as compared with under normal pressure. Further, by sucking the first processing liquid from the vicinity of an edge of the substrate, it is possible to coat the upper surface of the substrate with the first processing liquid in a still shorter time. As a result, it is possible to shorten the time required for the processing of the substrate.

A substrate processing apparatus and method includes, a plate that has a size equal to or larger than a principal face of the substrate, and has a horizontal and flat liquid holding face opposing the principal face of the substrate from below. A processing liquid supply unit supplies a processing liquid to the liquid holding face. A control unit controls the processing liquid supply unit and a movement unit to supply the processing liquid to the liquid holding face to form a processing liquid film, a contact step of bringing the principal face of the substrate and the liquid holding face close to each other to bring the principal face of the substrate into contact with the processing liquid film, and a liquid contact maintenance step of maintaining the processing liquid in contact with the principal face of the substrate.

Substrate processing device and substrate processing method

A substrate processing apparatus includes a substrate holding unit that horizontally holds a substrate in non-contact with a major surface of the substrate, a processing liquid supply unit that supplies a processing liquid to the major surface of the substrate held by the substrate holding unit, and a hydrophilic surface placing unit that places an annular hydrophilic surface along a peripheral portion of the major surface of the substrate held by the substrate holding unit such that the hydrophilic surface comes into contact with a liquid film of the processing liquid held on the major surface of the substrate.

A substrate processing apparatus comprises a single-substrate processing apparatus for processing substrates one by one, and an anti-static liquid storage part for storing an anti-static liquid having electrical resistivity maintained at target electrical resistivity higher than the electrical resistivity of an SPM liquid. A plurality of substrates held in a cartridge are immersed in the anti-static liquid inside the anti-static liquid storage part and both main surfaces of the substrate entirely come into contact with the anti-static liquid. From the substrates, static electricity is relatively gently removed. Then, after the static elimination process are finished, a processing liquid supply part supplies the SPM liquid onto an upper surface of the substrate and an SPM process is thereby performed. It is thereby possible to prevent a large amount of electric charges from rapidly moving from the substrate to the SPM liquid and also possible to prevent any damage to the substrate.

In a substrate processing apparatus, an anti-static liquid supply part supplies the anti-static liquid having electrical resistivity higher than that of an SPM liquid onto a substrate to puddle an entire upper surface of the substrate with the anti-static liquid, to thereby gradually remove static electricity from the substrate. Then, the processing liquid supply part supplies the SPM liquid onto the substrate to thereby perform an SPM process. In the SPM process, it is thereby possible to prevent a large amount of electric charges from rapidly moving from the substrate to the SPM liquid and prevent any damage to the substrate. Further, by maintaining the electrical resistivity of the anti-static liquid at the target electrical resistivity, it is possible to increase the static elimination efficiency of the substrate and shorten the time required for the static elimination process within the limits of causing no damage to the substrate.

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Kyoto, Japan

Masahiro Miyagi