Shin-etsu Chemical Co., Ltd.

Masahiro Kanayama

Tsutomu Ogihara

Yusuke Biyajima

Tsukasa Watanabe

Ryo Mitsui

Masaki Ohashi

Yoshio Kawai

Tomohiro Kobayashi

The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3): where Rrepresents an iodine-containing organic group; and Rand Rare each independently identical to R, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.

Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process

A composition for forming a silicon-containing resist underlayer film includes: a thermosetting silicon-containing material containing any one or more of a partial structure shown by the general formula (Sx-1), (Sx-2), and (Sx-3); and a compound shown by the general formula (P-0), where Rrepresents an organic group that has or generates a silanol group, a hydroxy group, or a carboxy group; Rand Rare each independently the same as Ror each represent a hydrogen atom or a monovalent substituent having 1 to 30 carbon atoms; Rrepresents a divalent organic group substituted with a fluorine atom; Rand Reach independently represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; Rrepresents a divalent hydrocarbon group having 1 to 20 carbon atoms; and Lrepresents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms.

Composition for forming silicon-containing resist underlayer film and patterning process

A method for measuring a distance of diffusion of a curing catalyst for a thermosetting silicon-containing material includes the steps of: forming a silicon-containing film from a composition containing a thermosetting silicon-containing material, a curing catalyst and a solvent; coating the silicon-containing film with a photosensitive resin composition containing a resin whose solubility in alkaline developer is increased by the action of an acid, an acid generator and a solvent, and subsequently heating to prepare a substrate on which the silicon-containing film and a resin film are formed; irradiating the substrate with a high energy beam or an electron beam to generate an acid and heat-treating the substrate to increase the solubility of the resin in an alkaline developer by the action of the acid in the resin film; dissolving the resin film in an alkaline developer; and measuring a film thickness of the remaining resin.

Method for measuring distance of diffusion of curing catalyst

The present invention provides a resist underlayer film capable of improving LWR and CDU in a fine pattern formed by a chemically-amplified resist which uses an acid as a catalyst. A composition for forming a silicon-containing resist underlayer film, including a thermosetting silicon-containing material (Sx), a curing catalyst (Xc), and a solvent, in which a distance of diffusion of the curing catalyst (Xc) from a resist underlayer film formed from the composition for forming a silicon-containing resist underlayer film to a resist upper layer film to be formed on the resist underlayer film is 5 nm or less.

A composition for forming a silicon-containing resist underlayer film contains at least: one or more compounds shown by the following general formula (P-0); and a thermally crosslinkable polysiloxane (Sx), where Rrepresents divalent organic group substituted with one or more fluorine atoms; Rand Reach independently represent a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom; Rrepresents linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom; Rand R, or Rand R, are optionally bonded to each other to form a ring with sulfur atom in the formula; and Lrepresents a single bond or linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom.

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Joetsu, Japan

Masahiro Kanayama