Tokyo Electron Limited

Masahiro Fukuda

Taro Yamamoto

Kouichirou Tanaka

Yusaku Hashimoto

Yasushi Takiguchi

Atsushi Ookouchi

Takeshi Shimoaoki

Akihiro Kubo

Kousuke Yoshihara

Hideharu Kyouda

Masashi Enomoto

Yoshinori Ikeda

Koshi Muta

Hiroshi Ichinomiya

Yoshiki Okamoto

Kenji Yada

Koki Yoshimura

Noboru Nakashima

Akiko Kai

Koichi Obata

Kenzi Yada

A development processing apparatus includes: a substrate holder that holds a substrate horizontally wherein the substrate includes a resist film; a rotator that rotates the substrate holder; first and second developer supplies that supply a developer to the substrate; and a liquid receiver that receives the developer from the substrate. The first developer supply is formed to have a length smaller than a diameter of the substrate. The second developer supply is formed to have a length equal to or larger than the diameter of the substrate. The liquid receiver includes first and second annular walls that are formed in an annular shape having a circular opening having a diameter larger than the diameter of the substrate. The first and second annular walls are movable up and down independently of each other, and a vertical distance between the first annular wall and the second annular wall is variable.

Development processing apparatus and development processing method

A method of processing a substrate includes: performing a first developing process of moving a nozzle having one end surface and a discharge port opened at the end surface while making the end surface come into contact with a developer on a front surface of a substrate in a state in which the nozzle is disposed so that the end surface faces the front surface and the developer is discharged from the discharge port at a first flow rate while rotating the substrate; and after the first developing process, performing a second developing process of discharging the developer from the discharge port at a second flow rate higher than the first flow rate in a state in which the end surface is in contact with the developer on the front surface at a position facing a center of the front surface of the substrate while rotating the substrate.

Substrate processing method, storage medium, and substrate processing apparatus

When performing a liquid processing on a substrate W being rotated and removing a processing liquid by a cleaning liquid, a cleaning liquid nozzleconfigured to discharge a cleaning liquid slantly with respect to a surface of the substrate W toward a downstream side of a rotational direction of the substrate W and a gas nozzleconfigured to discharge a gas toward a position adjacent to a central portion side of the substrate W when viewed from a liquid arrival position R of the cleaning liquid are moved from the central portion side toward a peripheral portion side. A rotation number of the substrate is varied such that rotation number in a period during which the liquid arrival position R moves in the second region becomes smaller than a maximum rotation number in a period during which the liquid arrival position moves in the first region.

Substrate processing method, substrate processing apparatus and recording medium

A method includes forming a liquid puddle of a mixed solution of the diluting liquid and the processing liquid; rotating the substrate at a first rotation speed which allows the mixed solution located at a region facing an inner side than an edge of the liquid contact surface to stay between the liquid contact surface and the surface of the substrate and allows the mixed solution located at a region facing an outer side than the edge of the liquid contact surface to be diffused toward an edge of the substrate; rotating the substrate at a second rotation speed smaller than the first rotation speed after the substrate is rotated at the first rotation speed; and moving the nozzle toward the edge of the substrate while discharging the processing liquid from the discharge hole in a state that the substrate is rotated at the second rotation speed.

Substrate processing method and recording medium capable of suppressing non-uniformity in degree of progression of processing depending on position on substrate

There is disclosed a polishing cleaning mechanism configured to be in contact with a rear surface of a substrate which is held in a substrate holding unit for holding the rear surface of the substrate and perform a polishing process and a cleaning process on the rear surface of the substrate, including a cleaning member configured to clean the rear surface of the substrate, a polishing member configured to polish the rear surface of the substrate, and a support member configured to support the polishing member and the cleaning member to face the rear surface of the substrate held in the substrate holding unit, wherein a surface of the polishing member facing the substrate and a surface of the cleaning member facing the substrate differ in relative height from each other.

Polishing cleaning mechanism, substrate processing apparatus, and substrate processing method

A development method includes: a development step of supplying a developing solution to a surface of a substrate for manufacturing a semiconductor device after undergoing formation of a resist film and exposure, to perform development; a first rotation step of, after the development step, increasing revolution speed of the substrate to rotate the substrate in a first rotational direction around a central axis so as to spin off and remove part of the developing solution from the substrate; and a second rotation step of, after the first rotation step, rotating the substrate in a second rotational direction reverse to the first rotational direction so as to spin off and remove the developing solution remaining on the substrate from the substrate.

Development method, development device, and non-transitory computer-readable storage medium

A substrate processing method includes steps of: supplying a developer onto a substrate surface from a discharge port while the substrate is rotated at a first rotation speed and a liquid contact surface faces the surface, and moving the nozzle while the liquid contact surface contacts with the developer so that a liquid film of the developer is formed on the surface; rotating the substrate at a second rotation speed slower than the first rotation speed, after the liquid film is formed, in a state where supply of the developer is stopped; rotating the substrate at a third rotation speed faster than the first rotation speed, after the substrate is rotated at the second rotation speed; and reducing rotation speed of the substrate to the second rotation speed or less, after the substrate is rotated at the third rotation speed, so that the liquid film is held on the surface.

Substrate processing method, substrate processing apparatus, and non-transitory computer-readable medium

There is provided a guide memberin which an inclined surfacethereof is inclined downwardly outwards from an edge portion of a rear surface of a horizontally held wafer W; and a cylindrical surrounding memberwhich surrounds the wafer W and in which an upper peripheral portion thereof is inwardly extended obliquely upwards. Further, the surrounding memberhas, at an inner surface side thereof, two groove portionsextended along an entire circumference and located above a height position of the horizontally held wafer W. If an air flow flows along the surrounding member, a vortex flow is formed within the groove portionsand stays therein. Thus, mist can be captured, so that the flow of the mist to the outside of a cup bodycan be suppressed. Accordingly, the adhesion of the mist to the wafer W can be suppressed.

Liquid processing apparatus and liquid processing method

A developing apparatus including a horizontal substrate holder, a rotating mechanism to rotate the substrate holder, a developer nozzle to supply a developer onto a part of the substrate to form a liquid puddle, a moving mechanism to move the developer nozzle in a radial direction of the rotating substrate, a contact part that moves with the developer nozzle and has a surface opposed to the substrate, which is smaller than the surface of the substrate, and a control unit to output a control signal such that a supply position of the developer on the substrate is moved in the radial direction of the substrate so that the liquid puddle is spread out on a whole surface of the substrate while the contact part is in contact with the liquid puddle.

Developing method, developing apparatus and storage medium

A developing method includes: horizontally holding a substrate; disposing an opposing surface of a developer nozzle that faces a portion of a surface of the substrate, above one of central and peripheral portions of the surface; discharging a developer to form a liquid collection portion of the developer; spreading the liquid collection portion by moving the developer nozzle toward the other of the central and peripheral portions with the opposing surface brought into contact with the liquid collection portion; lifting the developer nozzle relative to the surface while stopping the discharge of the developer, and pulling up a portion of the liquid collection portion; stopping the lifting, and forming a pillar of the developer having a tapered upper end which is brought into contact with the opposing surface; and applying a shearing force to the pillar to shear the tapered upper end and separating the pillar from the opposing surface.

Developing method, developing apparatus, and storage medium

A developing apparatus includes a first cup module and a second cup module arranged to be spaced apart from each other in a transverse direction; a first developing solution nozzle configured to wait in a standby position between the first cup module and the second cup module; and a first moving mechanism configured to move the first developing solution nozzle between the standby position and a processing position in which the developing solution is supplied to the substrate, wherein the first developing solution nozzle includes an ejection hole configured to eject the developing solution to form a liquid puddle on a surface of the substrate, the first developing solution nozzle includes a contact portion formed smaller than the surface of the substrate and installed to face the surface of the substrate, and the first developing solution nozzle spreads the liquid puddle on the substrate.

Developing apparatus

A developing method includes: horizontally holding an exposed substrate by a substrate holder; forming a liquid puddle on a part of the substrate, by supplying a developer from a developer nozzle; rotating the substrate; spreading the liquid puddle on a whole surface of the substrate, by moving the developer nozzle such that a supply position of the developer on the rotating substrate is moved in a radial direction of the substrate; bringing, simultaneously with the spreading of the liquid puddle on the whole surface of the substrate, a contact part into contact with the liquid puddle, the contact part being configured to be moved together with the developer nozzle and having a surface opposed to the substrate which is smaller than the surface of the substrate. According to this method, an amount of liquid falling down to the outside of the substrate can be inhibited. In addition, since the rotating speed of the substrate can be decreased, spattering of the developer can be inhibited. Further, a throughput can be improved by stirring the developer.

A substrate liquid treatment apparatus comprises a chuck () that holds and rotates a wafer, a back surface purging nozzle () that discharges a purge gas toward the back surface of the wafer, and a periphery purging nozzlethat discharges the purge gas onto the back surface of the wafer. The back surface purging nozzle has a slit-like opening part extending from a central side to a peripheral side of the substrate in a plan view. Vertical distance between the slit-like opening part and the substrate held by the substrate holding unit increases as approaching an end of the opening part on the central side of the substrate. The periphery purging nozzle discharges the purge gas, toward a central part of the substrate, toward a region on the back surface of the substrate, which region is located radially outside an end of the slit-like opening part of the back surface purging nozzle and radially inside an peripheral edge of the substrate.

Growing community of inventors

Koshi, Japan

Masahiro Fukuda