Jsr Corporation

Japan Synthetic Rubber Co., Ltd.

Masahiro Akiyama

Hisashi Nakagawa

Atsushi Shiota

Takahiko Kurosawa

Tatsuya Yamanaka

Katsumi Inomata

Seitaro Hattori

Terukazu Kokubo

Akira Tsuji

Masaki Obi

Koichi Hasegawa

Shin-ichiro Iwanaga

Toshiyuki Ota

Yoshiji Yumoto

Tsuyoshi Furukawa

Manabu Sekiguchi

Hajime Tsuchiya

Youhei Nobe

Kouichi Hirose

Naohisa Tokushige

Michihiro Mita

A process for producing a polymer includes mixing (A) a polysiloxane compound and (B) a polycarbosilane compound in the presence of a catalyst, water, and an organic solvent, and heating the mixture.

Polymer and process for producing the same, composition for forming insulating film, and insulating film and method of forming the same

A method of forming an organic silica film includes forming a coating including a silicon compound having an &#x2014;Si&#x2014;O&#x2014;Si&#x2014; structure and an &#x2014;Si&#x2014;CH&#x2014;Si&#x2014; structure on a substrate, heating the coating, and curing the coating by applying ultraviolet radiation.

Method for forming organic silica film, organic silica film, wiring structure, semiconductor device, and composition for film formation

A polycarbosilane has a main chain in which silicon atoms and carbon atoms are alternately repeated, and includes a structural unit shown by the following general formula (1), a structural unit shown by the following general formula (2), a structural unit shown by the following general formula (3), and a structural unit shown by the following general formula (4). 

Polycarbosilane, method for producing same, silica composition for coating application, and silica film

An insulating-film-forming composition for a semiconductor device comprising an organic silica sol with a carbon atom content of 11 to 17 atom % and an organic solvent is disclosed. The organic silica sol comprises a hydrolysis-condensation product P1 and a hydrolysis-condensation product P2. The hydrolysis-condensation product P1 is obtained by hydrolyzing and condensing (A) a silane monomer comprising a hydrolyzable group and (B) a polycarbosilane comprising a hydrolyzable group in the presence of (C) a basic catalyst, and the hydrolysis-condensation product P2 is obtained by hydrolyzing and condensing (D) a silane monomer comprising a hydrolyzable group.

Organic silica film and method for forming same, composition for forming insulating film of semiconductor device and method for producing same, wiring structure and semiconductor device

An insulating-film-forming composition includes: a hydrolysis-condensation product obtained by hydrolyzing and condensing a hydrolyzable-group-containing silane monomer (A) in the presence of a polycarbosilane (B) and a basic catalyst (C); and an organic solvent.

Composition for forming insulating film, method for producing same, silica-based insulating film, and method for forming same

An insulating-film-forming composition including an organic solvent and a hydrolysis-condensation product which is obtained by hydrolysis and condensation of a component (A) in the presence of a component (B).

Insulating-film-forming composition, method of producing the same, silica-based insulating film, and method of forming the same

A laminate including: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming the laminate includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.

Laminate and method of forming the same, insulating film, and semiconductor device

A method of producing a polymer includes hydrolyzing and condensing a hydrolyzable-group-containing silane monomer (B) in the presence of one or more polycarbosilanes (A), at least one of the polycarbosilanes (A) being a polycarbosilane (I) having a weight average molecular weight of 500 or more and obtained by reacting a compound of the following general formula (1) in the presence of at least one of an alkali metal and an alkaline earth metal,RYSiCRX&#x2003;&#x2003;(1)

Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film

A process for producing a film forming composition, the process including hydrolyzing and condensing: (A) at least one silane compound selected from a compound (A-1) shown by the following general formula (1), a compound (A-2) shown by the following general formula (2), and a compound (A-3) shown by the following general formula (3),RSi(OR)&#x2003;&#x2003;(1)Si(OR)&#x2003;&#x2003;(2)R(RO)Si&#x2014;(R)&#x2014;Si(OR)R&#x2003;&#x2003;(3); and (B) a cyclic silane compound shown by the following general formula (4): 

Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film

A polycarbosilane, having a main chain in which silicon atoms and carbon atoms are alternately repeated, includes a repeating unit shown by a following general formula (1), a repeating unit shown by a following general formula (2), and a repeating unit shown by a following general formula (3). 

Polycarbosilane and method of producing the same

A method of forming a silica-based film includes: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment. The composition includes: a hydrolysis-condensation product produced by hydrolysis and condensation of at least one silane compound selected from the group consisting of compounds shown by the following general formula (A), and at least one silane compound selected from the group consisting of compounds shown by the following general formula (B) and compounds shown by the following general formula (C); and an organic solvent, 

Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device

A radiation-sensitive resin composition including an alkali soluble resin and a quinonediazide compound is provided. The quinonediazide compound has the formula (1), for example: ##STR1## wherein, R.sup.1 to R.sup.6 are an alkyl, cycloalkyl or aryl group; a and b are an integer of 1 to 3; D.sup.1 and D.sup.2 are independently a hydrogen atom or a 1,2-quinonediazidosulfonyl group, provided that at least one of D.sup.1 is a 1,2-quinonediazidosulfonyl group; A is a bonding such as single bond; and x and y are an integer of 0 to 2. The composition is suitable as a positive resist, which effectively restrains the occurrence of scum, and excellent in developability, pattern shape, sensitivity, resolution and focus latitude.

Radiation-sensitive resin composition

A radiation-sensitive resin composition comprising:

The present invention provides a radiation sensitive resin composition which contains an alkali soluble resin and a 1,2-quinonediazide compound represented by the following formula, for example. ##STR1## The radiation sensitive resin composition of the present invention has an excellent developability, provides an excellent pattern shape, is superior in sensitivity and resolution, and has greatly improved focus latitude and heat resistance in particular. Therefore, the radiation sensitive resin composition of the present invention can be suitably used as a resist for the production of LSIs.

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Tsukuba, Japan

Masahiro Akiyama