Tokyo Electron Limited

Olympus Medical Systems Corporation

Olympus Corporation

Masahiko Tomita

Hiroyuki Takahashi

Kenichi Kobayashi

Hideto Onishi

Eiri Suzuki

Akihisa Ogawa

Yutaka Takahashi

Satoshi Takagi

Toshiaki Noguchi

Toshiharu Nishimura

Kota Umezawa

Naoya Taya

Ryou Son

Aiko Kosugi

Ryuta Sewake

Yoshitomo Yaguchi

Kazuhide Hasebe

Mitsuhiro Okada

Akitaka Shimizu

Shuji Moriya

Seishi Murakami

Yamato Tonegawa

Takashi Sakuma

Shintaro Suzuki

Takashi Kobayashi

Tomokazu Iwasaki

Takamichi Kikuchi

Takahito Umehara

Hitoshi Hasegawa

Einosuke Tsuda

Tetsuya Shibata

Takayuki Kamaishi

Michifumi Yoshie

Takuya Abe

Shinichiro Kawachi

Jiro Katsuki

Hirotake Fujita

Young Chung Kim

Tomoaki Ogiwara

Keisuke Nozaki

A substrate treatment method capable of obtaining a flat processing target film. Molecules of an HF gas are adsorbed onto a corner SiOlayer remaining in a corner portion of a groove of a wafer subjected to an oxide film removal process. An excess HF gas is discharged. An NHgas is supplied toward the corner SiOlayer onto which the molecules of the HF gas are adsorbed. AFS is formed by reacting the corner SiOlayer, the HF gas and the NHgas with each other. The AFS is sublimated and removed.

Substrate treatment method and substrate treatment apparatus

There is provided a substrate processing method for removing an oxide film formed on a surface of a substrate. The method includes (a) transforming the oxide film into a reaction by-product by supplying a halogen element-containing gas and a basic gas to the substrate accommodated in a processing chamber; and (b) sublimating the reaction by-product to remove the reaction by-product from the substrate by stopping the supply of the halogen element-containing gas into the processing chamber and supplying an inert gas into the processing chamber. The steps (a) and (b) are repeated a plurality of times.

Substrate processing method and substrate processing apparatus

A substrate processing method includes a fluorine-based gas supply step of supplying a fluorine-based gas into a processing chamber where a substrate having a silicon-based film is accommodated, a purge gas supply step of supplying a purge gas for discharging the supplied fluorine-based gas into the processing chamber. The substrate processing method further includes a nitrogen-based gas supply step of supplying a nitrogen-based gas into the processing chamber from which the fluorine-based gas has been discharged. In the substrate processing method, at least in the fluorine-based gas supply step and the purge gas supply step, a temperature of the substrate is maintained at 60&#xb0; C. or less.

Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.

Oxide film removing method, oxide film removing apparatus, contact forming method, and contact forming system

A linear member transfer apparatus includes: a linear member housing portion having a bottomed cylindrical shape and including: a bottom portion; an opening; a side wall; a restriction portion that is a diaphragm disposed on a position at a predetermined distance from the bottom portion and that has an inner diameter smaller than an inner diameter of the bottom portion; a first chamber configured to house a linear member in a wound state; and a second chamber configured to house the linear member in an extended state; a transfer portion configured to transfer the linear member; and a guide.

Linear member transfer apparatus

When an air supply conduit is connected to an empty space portion inside an endoscope and air is fed to the empty space portion to perform a leak determination based on a change in the internal pressure of the endoscope which is caused by the air, a surface temperature of the endoscope that is measured by a temperature measurement portion is maintained at a temperature at the time that the leak determination starts, through energy supply control that irradiates far infrared rays onto a surface of the endoscope from a far-infrared ray irradiation portion.

Leak tester and endoscope reprocessor

A cleaning/disinfecting apparatus includes: a plurality of attachment portions for attaching an endoscope; a cleaning/disinfecting portion that communicates with the plurality of attachment portions and can execute different types of cleaning/disinfection menus for the respective attachment portions; and an endoscope information reading portion that reads endoscope information from the endoscope. Also, the cleaning/disinfecting apparatus includes: a control portion that determines a cleaning/disinfection menu based on the read endoscope information and outputs attachment portion identifying information for identifying an attachment portion for executing the determined cleaning/disinfection menu; and a notifying portion that notifies the attachment portion identifying information outputted from the control portion.

Cleaning/disinfecting apparatus

An endoscope cleaning/disinfecting apparatus for processing an endoscope in a cleaning tank using a diluted chemical obtained by diluting a chemical with hot water in a dilution tank of the present invention introduces the hot water into the cleaning tank immediately before processing, introduces the hot water into the dilution tank after the temperature of the hot water introduced into the cleaning tank falls within a specified temperature range, generates the diluted chemical, introduces the diluted chemical into the cleaning tank and processes the endoscope.

Endoscope cleaning/disinfecting apparatus and endoscope cleaning/disinfecting method

A water leakage checking apparatus includes: a plurality of attachment portions for attaching an endoscope; a water leakage sensing portion that communicates with the plurality of attachment portions and simultaneously carries out a plurality of items of a water leakage check menu; and an endoscope information reading portion that reads endoscope information from the endoscope. Also, the water leakage checking apparatus includes: a control portion that determines an item of the water leakage check menu based on the read endoscope information, assigns the determined item of the water leakage check menu to one of the plurality of attachment portions, and outputs attachment portion identifying information for identifying the assigned one of the attachment portions; and a notifying portion that notifies the attachment portion identifying information outputted from the control portion.

Water leakage checking apparatus

A washing tube of the present invention is a washing tube for supplying a washing and disinfecting fluid to an endoscope conduit of an endoscope placed in an endoscope washing and disinfecting apparatus, includes: a tube body, one end of which is connected to fluid supply sections of the endoscope washing and disinfecting apparatus for sending a fluid, a connector section disposed at the other end of the tube body and loosely and detachably fitted to a base of the endoscope conduit, a sealing member that is provided inside the connector section and comes into close contact with the base to keep the base and the connector section connected in a watertight manner, a valve body that moves forward by a liquid sending pressure of the supplied fluid and a biasing member provided inside the connector section for biasing the valve body backward.

Washing tube and endoscope washing and disinfecting apparatus

A method for using a semiconductor processing apparatus includes supplying an oxidizing gas and a reducing gas into a process container of the processing apparatus accommodating no product target substrate therein; causing the oxidizing gas and the reducing gas to react with each other within a first atmosphere that activates the oxidizing gas and the reducing gas inside the process container, thereby generating radicals; and removing a contaminant from an inner surface of the process container by use of the radicals.

Semiconductor processing apparatus and method for using same

An endoscope washing and disinfecting apparatus includes: a connecting portion connected to a bending transmitting portion of an endoscope to transmit driving force; a distal end driving portion for transmitting the driving force to the bending transmitting portion through the connecting portion; a fluid supplying unit for supplying gas into an inner space of the endoscope; and a control unit for controlling a pressure detecting portion for detecting pressure in the inner space and the distal end driving portion to provide the bending portion with bending motion, and for determining occurrence or nonoccurrence of water leak in the endoscope by comparing the pressure detected by the pressure detecting portion and a preset threshold.

Endoscope washing and disinfecting apparatus and leak detection method performed by the apparatus

A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.

Film formation apparatus and method for using the same

A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.

Film formation method and apparatus for semiconductor process

A film formation method for a semiconductor process is arranged to form an amorphous silicon film on a target substrate by CVD in a process field within a reaction container, while supplying a first process gas containing silicon into the process field, and setting the process field at a first temperature of 550&#xb0; C. or more and at a first pressure. The method is arranged to subsequently poly-crystallize the amorphous silicon film by a heat process in the process field to form a poly-silicon film, while supplying a second process gas different from the first process gas into the process field, and setting the process field at a second temperature higher than the first temperature and at a second pressure.

Growing community of inventors

Hachioji, Japan

Masahiko Tomita