Lam Research Corporation

Spp Technologies Co., Ltd.

Masahiko Tanaka

Takashi Inoue

Ching-Hwa Chen

Takashi Yamamoto

David R Pirkle

Shoichi Murakami

Yoshiyuki Nozawa

Shunji Miyahara

The present invention relates to a plasma etching method in which a special area for detecting an end point needs not to be set and an equipment therefor. At an etching step of forming SFgas into plasma to etch an etching ground on a Si film, the step is configured by two steps of: a large-amount supply step of supplying a large amount of SFgas; and a small-amount supply step of supplying a small amount of SFgas. An end-point detecting processormeasures an emission intensity of Si or SiFx in the plasma at the small-amount supply step, and determines that an etching end point is reached when the measured emission intensity becomes equal to or less than a previously set reference value.

Plasma etching method capable of detecting end point and plasma etching device therefor

A microwave transmitting window for a plasma processing device. The window is a body of one or more pieces of the same or different dielectric materials. A surface of the window facing a microwave transmitting horn or waveguide is planar and extends perpendicularly to an axial direction. An opposite surface of the window is recessed such that the body has a non-uniform thickness between the two surfaces. The recessed surface can have various shapes and the overall size of the window can be equal to the size of a plasma formation chamber of the plasma processing device. The outlet of the plasma formation chamber can be formed in an end wall or the outlet can be formed by the inner periphery of the plasma formation chamber.

Window for microwave plasma processing device

Growing community of inventors

Amagasaki, Japan

Masahiko Tanaka