Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Materials Cmp Holdings, Inc.

Mary Jo Kulp

David B James

Ethan S Simon

David Goodro Kelly

Alan Isami Nakatani

Darrell String

Adam Loyack

Shannon Holly Williams

Carlos Alfonso Cruz

John V H Roberts

Andrew Scott Lawing

T Todd Crkvenac

Kenneth A Prygon

Clyde A Fawcett

Robert F Antrim

Ethan Scott Simon

The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. The polishing pad includes a polishing layer having a polyurethane window. The polyurethane window has a cross-linked structure formed with an aliphatic or cycloaliphatic isocyanate and a polyol in a prepolymer mixture. The prepolymer mixture is reacted with a chain extender having OH or NHgroups and having an OH or NHto unreacted NCO stoichiometry less than 95%. The polyurethane window has a time dependent strain less than or equal to 0.02% when measured with a constant axial tensile load of 1 kPa at a constant temperature of 60&#xb0; C. at 140 minutes, a Shore D hardness of 45 to 90 and an optical double pass transmission of at least 15% at a wavelength of 400 nm for a sample thickness of 1.3 mm.

Creep-resistant polishing pad window

The polishing pad is suitable for polishing patterned semiconductor substrates containing at least one of copper, dielectric, barrier and tungsten. The polishing pad includes a polymeric matrix; and the polymeric matrix being a polyurethane reaction product of a polyol blend, a polyamine or polyamine mixture and toluene diisocyanate. The polyol blend is a mixture of 15 to 77 weight percent total polypropylene glycol and polytetramethylene ether glycol; and the mixture of polypropylene glycol and polytetramethylene ether glycol having a weight ratio of the polypropylene glycol to the polytetramethylene ether glycol from a 20 to 1 ratio to a 1 to 20 ratio. The polyamine or polyamine mixture is 8 to 50 weight percent; and the toluene diisocyanate is 15 to 35 weight percent total monomer or partially reacted toluene diisocyanate monomer.

Multi-functional polishing pad

A chemical mechanical polishing pad having a polishing layer with an integral window and a polishing surface adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate, wherein the formulation of the integral window provides improved defectivity performance during polishing. Also provided is a method of polishing a substrate using the chemical mechanical polishing pad.

Chemical mechanical polishing pad having a low defect window

The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed with an isocyanate-terminated reaction product formed from a prepolymer reaction of a prepolymer polyol and a polyfunctional isocyanate. The isocyanate-terminated reaction product has 4.5 to 8.7 weight percent unreacted NCO; and the isocyanate-terminated reaction product is cured with a curative agent selected from the group comprising curative polyamines, curative polyols, curative alcoholamines and mixtures thereof. The polishing pad contains at least 0.1 volume percent filler or porosity.

Polyurethane polishing pad

Chemical mechanical polishing pad having a low defect integral window

A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a light stable polymeric endpoint detection window, comprising: a polyurethane reaction product of an aromatic polyamine containing amine moieties and an isocyanate terminated prepolymer polyol containing unreacted &#x2014;NCO moieties; and, a light stabilizer component comprising at least one of a UV absorber and a hindered amine light stabilizer; wherein the aromatic polyamine and the isocyanate terminated prepolymer polyol are provided at an amine moiety to unreacted &#x2014;NCO moiety stoichiometric ratio of &#x3c;95%; wherein the light stable polymeric endpoint detection window exhibits a time dependent strain of &#x2266;0.02% when measured with a constant axial tensile load of 1 kPa at a constant temperature of 60&#xb0; C. at 100 minutes and an optical double pass transmission of &#x2267;15% at a wavelength of 380 nm for a window thickness of 1.3 mm; and, wherein the polishing surface is adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate. Also provided is a method of polishing a substrate (preferably a semiconductor wafer) using the chemical mechanical polishing pad provided.

Chemical mechanical polishing pad with light stable polymeric endpoint detection window and method of polishing therewith

Chemical mechanical polishing pads having a polishing layer with a polishing surface adapted for polishing a substrate are provided, wherein the polishing layer has a unique integral identification feature; wherein the unique integral identification feature is non-polish active, wherein the unique integral identification feature comprises at least two visually distinct characteristics, wherein at least one of the at least two visually distinct indicia is a non-color based indicia, wherein one of the at least two visually distinct indicia is a color based indicia, and wherein the at least two visually distinct characteristics are selected to uniquely identify the chemical mechanical polishing pad as a type of chemical mechanical polishing pad selected from a plurality of types of chemical mechanical polishing pads; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provided is a method of making such polishing layers and for using them to polish a substrate.

Chemical mechanical polishing pad having integral identification feature

Chemical mechanical polishing pads having a window with an integral identification feature, wherein the window has a polishing face and a nonpolishing face, wherein the integral identification feature is observable through the window, and wherein the integral identification feature identifies the chemical mechanical polishing pad as a type of chemical mechanical polishing pad selected from a plurality of types of chemical mechanical polishing pads. Also provided is a method of making such chemical mechanical polishing pads and for using them to polish a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate.

Chemical mechanical polishing pad having window with integral identification feature

The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad has an ultimate tensile strength of at least 3,000 psi (20.7 MPa) and polymeric matrix containing closed cell pores. The closed cell pores have an average diameter of 1 to 50 &#x3bc;m and represent 1 to 40 volume percent of the polishing pad. The pad texture has an exponential decay constant, &#x3c4;, of 1 to 10 &#x3bc;m as a result of the natural porosity of the polymeric matrix and a surface texture developed by implementing periodic or continuous conditioning with an abrasive. The surface texture has a characteristic half height half width, Wthat is less than or equal to the value of &#x3c4;.

Chemical mechanical polishing pad

The invention provides a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polymeric matrix having a top polishing surface. The top polishing surface has polymeric polishing asperities or forms polymeric polishing asperities upon conditioning with an abrasive. The polymeric polishing asperities are from a polymeric material having at least 45 weight percent hard segment and a bulk ultimate tensile strength of at least 6,500 psi (44.8 MPa). And the polymeric matrix has a two phase structure, a hard phase and a soft phase with an average area of the hard phase to average area of the soft phase ratio of less than 1.6.

A chemical mechanical polishing pad is suitable for polishing at least one of semiconductor, optical and magnetic substrates. The polishing pad has a high modulus component forming a continuous polymeric matrix and an impact modifier within the continuous polymeric matrix. The high modulus component has a modulus of at least 100 MPa. The impact modifier includes a low modulus component having a modulus of at least one order of magnitude less than the high modulus component that increases the impact resistance of the polishing pad.

The present invention provides a method of forming a chemical mechanical polishing pad comprising providing a polymeric matrix with fluid-filled unexpanded microspheres, curing the polymeric matrix and heating the polymeric matrix and the microspheres to expand the microspheres.

Method for forming a porous polishing pad

The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed with an isocyanate-terminated reaction product formed from a prepolymer reaction of a prepolymer polyol and a polyfunctional isocyanate. The isocyanate-terminated section product has 4.5 to 8.7 weight percent unreacted NCO; and the isocyanate-terminated reaction product is cured with a curative agent selected from the group comprising curative polyamines, curative polyols, curative alcoholamines and mixtures thereof. The polishing pad contains at least 0.1 volume percent filler or porosity.

The chemical mechanical polishing pad is suitable for polishing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polymeric matrix with an elastomeric polymer distributed within the polymeric matrix. The polymeric matrix has a glass transition above room temperature; and the elastomeric polymer has an average length of at least 0.1 &#x3bc;m in at least one direction, represents 1 to 45 volume percent of polishing pad and has a glass transition temperature below room temperature. The polishing pad has an increased diamond conditioner cut rate in comparison to a polishing pad formed from the polymeric matrix without the elastomeric polymer.

Elastomer-modified chemical mechanical polishing pad

The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polymeric matrix having a top polishing surface; and the top polishing surface has polymeric polishing asperities or forms polymeric polishing asperities upon conditioning with an abrasive. The polymeric polishing asperities extend from the polymeric matrix and represent the portion of the top polishing surface that can contact a substrate during polishing. The polymeric polishing asperities are from a polymeric material having a bulk ultimate tensile strength of at least 6,500 psi (44.8 MPa) and a bulk tear strength of at least 250 lb/in. (4.5&#xd7;10g/mm).

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Newark, DE, United States of America

Mary Jo Kulp