Applied Materials, Inc.

University of California

Mary Edmonds

Andrew C Kummel

Jessica Sevanne Kachian

Mei Yin Chang

Naomi Yoshida

Atif Noori

Sang Wook Park

Hyunwoong Kim

Srinivas D Nemani

Ellie Y Yieh

Steven J Wolf

Lin Dong

Steve Wolf

Embodiments described herein provide a self-limiting and saturating Si&#x2014;Obilayer process which does not require the use of a plasma or catalyst and that does not lead to undesirable substrate oxidation. Methods of the disclosure do not produce SiO, but instead produce a saturated Si&#x2014;Ofilm with &#x2014;OH termination to make substrate surfaces highly reactive towards metal ALD precursors to seed high nucleation and growth of gate oxide ALD materials.

Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALD

Methods for depositing silicon include cycling dosing between 1 and 100 cycles of one or more first chlorosilane precursors on a III-V surface at a temperature between 300&#xb0; C. and 500&#xb0; C. to form a first layer. Methods may include desorbing chlorine from the first layer by treating the first layer with atomic hydrogen to form a second layer. Methods may include forming a silicon multilayer on the second layer by cycling dosing between 1 and 100 cycles of one or more second chlorosilane precursors and atomic hydrogen at a temperature between 300&#xb0; C. and 500&#xb0; C. A layered composition includes a first layer selected from the group consisting of InGaAs, InGaSb, InGaN, SiGe, and Ge, wherein X is between 0.1 and 0.99, and a second layer, wherein the second layer comprises Si&#x2014;H and Si&#x2014;OH.

CVD silicon monolayer formation method and gate oxide ALD formation on semiconductor materials

Methods of the disclosure include a BN ALD process at low temperatures using a reactive nitrogen precursor, such as thermal NH, and a boron containing precursor, which allows for the deposition of ultra thin (less than 5 nm) films with precise thickness and composition control. Methods are self-limiting and provide saturating atomic layer deposition (ALD) of a boron nitride (BN) layer on various semiconductors and metallic substrates.

Low-temperature atomic layer deposition of boron nitride and BN structures

Embodiments described herein relate to semiconductor and metal substrate surface preparation and controlled growth methods. An example application is formation of an atomic layer deposition (ALD) control layer as a diffusion barrier or gate dielectric layer and subsequent ALD processing. Embodiments described herein are believed to be advantageously utilized concerning gate oxide deposition, diffusion barrier deposition, surface functionalization, surface passivation, and oxide nucleation, among other processes. More specifically, embodiments described herein provide for silicon nitride ALD processes which functionalize, passivate, and nucleate a SiNmonolayer at temperatures below about 300&#xb0; C.

Surface functionalization and passivation with a control layer

CVD silicon monolayer formation method and gate oxide ALD formation on III-V materials

Methods for depositing silicon on a semiconductor or metallic surface include cycling dosing of silane and chlorosilane precursors at a temperature between 50&#xb0; C. and 300&#xb0; C., and continuing cycling between three and twenty three cycles until the deposition self-limits via termination of surface sites with Si&#x2014;H groups. Methods of layer formation include depositing a chlorosilane onto a substrate to form a first layer, wherein the substrate is selected from the group consisting of InGaAs, InGaSb, InGaN, SiGe, and Ge, wherein X is between 0.1 and 0.99. The methods may include pulsing a silane to form a silicon monolayer and cycling dosing of the chlorosilane and the silane. Layered compositions include a first layer selected from the group consisting of InGaAs, InGaSb, InGaN, SiGe, and Ge, wherein X is between 0.1 and 0.99, and a second layer, wherein the second layer comprises Si&#x2014;H and Si&#x2014;OH.

Self-limiting chemical vapor deposition and atomic layer deposition methods

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San Diego, CA, United States of America

Mary Edmonds