U.S. Philips Corporation

Asm Lithography

Martinus A Van Den Brink

Jan Van Eijk

A method and an arrangement for aligning relative to each other a mask pattern (C) and a substrate (W) which are both provided with two alignment marks wherein by using two separate alignment systems (AS.sub.1, AS.sub.2) which are each associated with one mask mark (M.sub.1, M.sub.2) and which are each used for aligning the substrate marks (P.sub.1, P.sub.2) relative to said mask marks the substrate (W) and the mask (M) can be aligned accurately without referring to the frame of the exposure apparatus and in addition it is possible to detect magnification errors.

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Veldhoven, Netherlands

Martinus A Van Den Brink