Infineon Technologies Ag

Ams Ag

Siemens Aktiengesellschaft

Austriamicrosystems Ag

At&s Austria Technologie & Systemtechnik Aktiengesellschaft

International Business Machines Corporation

Infineon Technologies North America Corp.

Sciosense B.v.

Siemens Aktiengesellscharft

Sandrier Gmbh

Martin Schrems

Franz Schrank

Jochen Kraft

Dietmar Temmler

Rainer Minixhofer

Joachim Hoepfner

Klaus-Dieter Morhard

Helmut Horst Tews

Joerg Siegert

Cathal Cassidy

Wolfram Karcher

Markus Leitgeb

Jack Allan Mandelman

Reinhard J Stengl

Herbert Benzinger

Hubert Enichlmair

Jordi Teva

Herbert Schaefer

Thomas Bodner

Helmut Wurzer

Bernhard Stering

Rolf Weis

Willem Frederik Adrianus Besling

Eugene G Dierschke

Christoph Ludwig

Martin Knaipp

Matthias Ilg

Marco Gavagnin

Markus M Kirchhoff

Norbert Arnold

Harald Etschmaier

Erich Schlaffer

Jens-Uwe Sachse

Coenraad Cornelis Tak

Jong Mun Park

Mario Manninger

Andreas Wich-Glasen

Jörn Lützen

Bernhard Löffler

Jörg Siegert

Kai Wurster

J&uuml;rgen Faul

Anke Krasemann

Alexandra Lamprecht

Steve Anderson

Moritz Haupt

Sara Carniello

Thomas Stockmeier

Catharina Pusch

Odile Dequiedt

Sabine Steck

Stefan Rongen

Günther Koppitsch

Rolf-Peter Vollertsen

Frederic Roger

Rudolf Strasser

Barbara Schmidt

Ewald Wachmann

Wolfgang Gustin

Stefan Jessenig

Wilhelm Kegel

Dirk Drescher

Gregor Toschkoff

Karl Rohracher

Dietmar Ottenw&auml;lder

Ewald Stueckler

Guenther Koppitsch

Ewald Stückler

Gustav Beckmann

Thomas Pompl

Daniel K&ouml;hler

Alexander Ruff

Stefan Gernhard

Thomas Gaertner

Miklos Labodi

Roland Winkler

Daniel Köhler

Ulrike Gr&uuml;ning-Von Schwerin

The system-on-chip camera comprises a semiconductor body with an integrated circuit, a sensor substrate, sensor elements arranged in the sensor substrate according to an array of pixels, a light sensor in the sensor substrate apart from the sensor elements, and a lens or an array of lenses on a surface of incidence. Filter elements, which may especially be interference filters for red, green or blue, are arranged between the sensor elements and the surface of incidence.

System-on-chip camera with integrated light sensor(s) and method of producing a system-on-chip camera

An electronic device including a first component carrier, a second component carrier connected with the first component carrier so that a thermal decoupling gap is formed between the first component carrier and the second component carrier, a first component on and/or in the second component carrier, and a second component having a first main surface mounted in the thermal decoupling gap so that at least part of an opposing second main surface and an entire sidewall of the second component is exposed with respect to material of the first component carrier and with respect to material of the second component carrier.

Electronic module with single or multiple components partially surrounded by a thermal decoupling gap

The system-on-chip camera comprises a semiconductor body () with an integrated circuit (), a sensor substrate (), sensor elements () arranged in the sensor substrate according to an array of pixels, a light sensor () in the sensor substrate apart from the sensor elements, and a lens or an array of lenses () on a surface of incidence (). Filter elements (), which may especially be interference filters for red, green or blue, are arranged between the sensor elements and the surface of incidence.

In an embodiment a pressure sensor device includes a substrate body, a pressure sensor having a membrane and a cap body having at least one opening, wherein the pressure sensor is arranged between the substrate body and the cap body in a vertical direction which is perpendicular to a main plane of extension of the substrate body, and wherein the mass of the substrate body amounts to at least 80% of the mass of the cap body and at most 120% of the mass of the cap body.

Pressure sensor device and method for forming a pressure sensor device

A method for manufacturing an optical sensor is provided. The method comprises providing an optical sensor arrangement which comprises at least two optical sensor elements on a carrier, where the optical sensor arrangement comprises a light entrance surface at the side of the optical sensor elements facing away from the carrier. The method further comprises forming a trench between two optical sensor elements in a vertical direction which is perpendicular to the main plane of extension of the carrier, where the trench extends from the light entrance surface of the sensor arrangement at least to the carrier. Moreover, the method comprises coating the trench with an opaque material, forming electrical contacts for the at least two optical sensor elements on a back side of the carrier facing away from the optical sensor elements, and forming at least one optical sensor by dicing the optical sensor arrangement along the trench. Each optical sensor comprises an optical sensor element, and the light entrance surface is free of electrical contacts and at least partially free of the opaque material above the optical sensor elements. Furthermore, an optical sensor is provided.

Method for manufacturing an optical sensor and optical sensor

A component carrier including i) an electronic component embedded in the component carrier, ii) an antenna structure arranged at a region of a first main surface of the component carrier, iii) a shielding structure made of an electrically conductive material and configured for shielding electromagnetic radiation from propagating between the antenna structure and the electronic component. Hereby, the shielding structure is arranged at least partially between the antenna structure and the electronic component. Furthermore, the component carrier includes an electrically conductive structure to electrically connect the electronic component and the antenna structure through the shielding structure. The shielding structure is non-perforated at least in a plane between the antenna structure and the electronic component.

RF functionality and electromagnetic radiation shielding in a component carrier

A method of manufacturing a component carrier includes providing a known-good layer stack comprising an already formed electrically conductive connection structure and a known-good cavity, and mounting a known-good component on the already formed electrically conductive connection structure in the cavity.

Embedding known-good component in known-good cavity of known-good component carrier material with pre-formed electric connection structure

The lateral single-photon avalanche diode comprises a semiconductor body comprising a semiconductor material of a first type of electric conductivity, a trench in the semiconductor body, and anode and cathode terminals. A junction region of the first type of electric conductivity is located near the sidewall of the trench, and the electric conductivity is higher in the junction region than at a farther distance from the sidewall. A semiconductor layer of an opposite second type of electric conductivity is arranged at the sidewall of the trench adjacent to the junction region. The anode and cathode terminals are electrically connected with the semiconductor layer and with the junction region, respectively. The junction region may be formed by a sidewall implantation.

Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode

The method of producing an interposer-chip-arrangement, comprises providing an interposer () with an integrated circuit (), arranging a dielectric layer () with metal layers embedded in the dielectric layer above a main surface () of the interposer, connecting the integrated circuit with at least one of the metal layers, forming an interconnection () through the interposer, the interconnection contacting one of the metal layers, arranging a further dielectric layer () above a further main surface () of the interposer opposite the main surface and arranging a further metal layer in or on the further dielectric layer, the further metal layer being connected with the interconnection, arranging a chip provided with at least one contact pad at the main surface or at the further main surface, and electrically conductively connecting the contact pad with the interconnection.

Method of producing an interposer-chip-arrangement for dense packaging of chips

A photosensor () is arranged in a semiconductor substrate () at a main surface (), a dielectric layer () is arranged on or above the main surface, the dielectric layer including a metal layer () electrically connected with the photosensor, and an aperture layer () formed from an opaque or semitransparent material is arranged on or above the dielectric layer. The aperture layer is provided with an array of transparent aperture zones () above the photosensor, each of the aperture zones penetrating the aperture layer.

Semiconductor device comprising an aperture array and method of producing such a semiconductor device

The dicing method comprises the steps of providing a substrate () of semiconductor material, the substrate having a main surface (), where integrated components () of chips () are arranged, and a rear surface () opposite the main surface, fastening a first handling wafer above the main surface, thinning the substrate at the rear surface, and forming trenches () penetrating the substrate and separating the chips by a single etching step after the substrate has been thinned.

Dicing method

The semiconductor device comprises a semiconductor substrate () with a main surface () and a further main surface () opposite the main surface, a TSV () penetrating the substrate from the main surface to the further main surface, a metallization () of the TSV, an under-bump metallization () and a bump contact () at least partially covering the TSV at the further main surface. The TSV () comprises a cavity (), which may be filled with a gas or liquid. An opening (') of the cavity is provided to expose the cavity to the environment.

Semiconductor device with a bump contact on a TSV comprising a cavity and method of producing such a semiconductor device

The semiconductor device comprises a semiconductor substrate (), a sensor or sensor array () arranged at a main surface () of the substrate, an integrated circuit () arranged at or above the main surface, and a focusing element () comprising recesses () formed within a further main surface () of the substrate opposite the main surface. The focusing element may be arranged opposite the sensor or sensor array (), which may be a photosensor or photodetector or an array of photosensors or photodetectors, for instance. The focusing element () is formed by etching the recesses () into the semiconductor material.

Semiconductor device with surface integrated focusing element and method of producing a semiconductor device with focusing element

A relief structure is formed on a surface of a carrier provided for accommodating a wafer, which is fastened to the carrier by a removable adhesive contacting the carrier. The relief structure, which may be spatially confined to the center of the carrier, reduces the strength of adhesion between the wafer and the carrier. If the adhesive is appropriately selected and maintains the connection between the wafer and the carrier at elevated temperatures, further process steps can be performed at temperatures of typically 300&#xb0; C. or more. The subsequent mechanical separation of the adhesive joint is facilitated by the relief structure on the carrier.

Method of producing a removable wafer connection and carrier for wafer support

A semiconductor substrate is provided with an annular cavity extending from a front side of the substrate to an opposite rear side. A metallization is applied in the annular cavity, thereby forming a through-substrate via and leaving an opening of the annular cavity at the front side. A solder ball is placed above the opening and a reflow of the solder ball is effected, thereby forming a void of the through-substrate via, the void being covered by the solder ball.

Method of producing a semiconductor device with through-substrate via covered by a solder ball

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Eggersdorf, Austria

Martin Schrems