Leybold Materials Gmbh

Materion Advanced Materials Germany Gmbh

Heraeus Deutschland Gmbh & Co Kg

Heraeus Materials Technology Gmbh & Co. Kg

Leybold Material Gmbh

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

W.c. Heraeus Gmbh

Martin Schlott

Martin Kutzner

Bruce Gehman

Martin Weigert

Uwe Konietzka

Markus Schultheis

Sabine Schneider-Betz

Christoph Simons

Annette Lukas

Nicole Staudt

Bernd Szyszka

Dirk Maier

Wolfgang Dauth

Josef Heindel

Suk-Jae Lee

Jens Wagner

Norbert Wollenberg

Albert Kastner

Shawn Vahlstrom

Volker Sittinger

Christoph Stahr

Andreas Herzog

Carl Christoph Stahr

Lars Ebel

Ben Kahle

Kwei Teng

Wilma Dewald

Thomas Scholl

Carl-Christoph Stahr

Helmut Luh

The present invention relates to a sputtering target comprising Ni, W and, optionally, one or more further metal(s) X selected from the group of the refractory metals, Sn, Al and Si, which has a normalized peak intensity ratio&#xb7;()/

NiW(X) sputtering target with improved structure

The present invention relates to a sputtering target, comprising a silver alloy comprising

Silver alloy-based sputter target

A double-layer system includes a metal layer facing away from a viewer and a coating facing the viewer. In order to make the layer system production process as simple as possible and to provide a sputter deposition method that dispenses entirely with the use of reactive gases in the sputtering atmosphere or requires only a small amount thereof, the coating is in the form of an optically partially absorbing layer which has an absorption coefficient kappa of less than 0.7 at a wavelength of 550 nm and a thickness ranging from 30 to 55 nm.

Double-layer system comprising a partially absorbing layer, and method and sputter target for producing said layer

The invention relates to a sputtering target containing a sputtering material containing a metal oxide. The sputtering material contains zirconium and titanium as metals and contains at least one mixed oxide phase.

Sputtering target with optimized performance characteristics

A tube-shaped sputtering target is provided having a carrier tube and an indium-based sputtering material arranged on the carrier tube. The sputtering material has a microstructure having a mean grain size of less than 1 mm, measured as the mean diameter of the grains on the sputtering-roughened surface of the sputtering material.

Tube-shaped sputtering target

A sputtering target is provided which ensures the production of unvaryingly homogenous layers of the sputtering material during the lifespan of the sputtering target. The sputtering target includes a mixture of oxides of indium, zinc, and gallium, the mixture containing at least one ternary mixed oxide of indium, zinc, and gallium and at least one amorphous phase. The portion of ternary mixed oxides of indium, zinc, and gallium is at least 50 weight percent, relative to the total weight of the mixture, and the portion of amorphous phase is at least 20 weight percent, relative to the total weight of the mixture.

Sputtering target having amorphous and microcrystalline portions and method of producing same

Planar or tubular sputtering targets made of a silver base alloy and at least one further alloy component selected from indium, tin, antimony, and bismuth accounting jointly for a weight fraction of 0.01 to 5.0% by weight are known. However, moving on to ever larger targets, spark discharges are evident and often lead to losses especially in the production of large and high-resolution displays having comparatively small pixels. For producing a sputtering target with a large surface area on the basis of a silver alloy of this type, which has a surface area of more than 0.3 mas a planar sputtering target and has a length of at least 1.0 m as a tubular sputtering target, and in which the danger of spark discharges is reduced and thus a sputtering process with comparatively high power density is made feasible, the invention proposes that the silver base alloy has a crystalline structure with a mean grain size of less than 120 &#x3bc;m, an oxygen content of less than 50 wt.-ppm, a content of the impurity elements, aluminum, lithium, sodium, calcium, magnesium, barium, and chromium, each of less than 0.5 wt.-ppm, and a metallic purity of at least 99.99% by weight.

Planar or tubular sputtering target and method for the production thereof

A TFT structure is provided in which an oxidic semiconductor is used in combination with an electrode material based on a Cu alloy.

Thin film transistor (TFT) having copper electrodes

A cobalt based alloy having a chromium content in the range of 18-21% permits a high degree of magnetic field penetration which is comparable to non-ferromagnetic alloys. The alloy preferably contains 8-18% Pt and optionally may contain small amounts of Mo, Pd, Ni, Ti, V, Ta, W, and B.

Cobalt base alloy sputtering target with high magnetic field penetration

An indium oxide/tin oxide powder with 5-15 wt. % tin oxide is subjected to an annealing treatment at T&gE;1, 000&deg; C. and is then partially reduced and subjected to hot isostatic pressing to produce a sputtering target with a density of at least 95% of the theoretical density and a thermal conductivity of at least 14 Wm,K,.

Method of preparing indium oxide/tin oxide target for cathodic sputtering

Target for a magnetron-cathode sputtering apparatus is made from a cobalt base alloy containing additional elements in such concentrations that intermetallic phases are formed with at least one of these elements and intermetallic phases are observed on the basis of the phase diagram in the state of equilibrium at the operating temperature of the target. The grain boundaries, sub-grain boundaries, twin-grain boundaries or slip bands of the cobalt mixed crystal forming the matrix are decorated with the elements forming the intermetallic phases. X-ray diffraction diagrams made from the target display reflections of an intermetallic phase which is largely absent in the cast state and which forms only during a heat treatment in the temperature range below the solidus temperature of the alloy by a solid state reaction.

Cobalt base alloy target for a magnetron cathode sputtering system

Compacted ITO material is ground to a powder with particles in the size range of less than 500 .mu.m, whereupon the powder thus obtained is molded into new target blanks, either alone or in a mixture with unused ITO powder, under the simultaneous action of pressure and temperature. The temperature is kept sufficiently low so that recrystallization does not take place and the original grain size is preserved.

Process for the recycling of spent indium oxide-tin oxide sputtering

The tin-containing component of a powder mixture includes SnO and is subjected to a mixing treatment with the In.sub.2 O.sub.3 before compaction to adjust the degree of reduction of the sputtering target in a simple and reproducible manner.

Process for the production of partially reduced indium oxide-tin oxide

A target for production of transparent electrically conductive layers by cathode sputtering is produced from indium oxide-tin oxide powder mixtures or coprecipitated indium oxide-tin oxide powders. A target with especially high mechanical strength consists of an oxide ceramic material into which metallic phase components have been incorporated in a uniform and finely distributed manner and which has a density of more than 96% of the theoretical density of indium oxide/tin oxide consisting purely of oxide.

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Offenbach, Germany

Martin Schlott