Infineon Technologies Ag

Martin Rössiger

Thorsten Schedel

Jens Stäcker

The unevennesses of a chuck are measured at various positions and are stored, as discrepancies from an idealized plane, in a databank. The measured discrepancies are used to calculate corrections for the predetermined settings for the focus distance and/or the tilt of the chuck. These corrections are in each case used differently for adjusting the respective exposure of the exposure areas.

Method for adjusting a substrate in an appliance for carrying out exposure

Exposure positions of exposure fields of semiconductor wafers are subsequently corrected individually in order to compensate for processes affecting the locational position of alignment marks and/or oblique measurement structures. Measurement structures are formed preferably in the frame region of product wafers comprising electrical circuits to be formed and their locational positions before and after the effect of the process that has an effect are compared individually for purpose of determining the positional displacement for each relevant exposure field. From this there is determined either directly a 'shot'-fine correction value for the individual exposure or at least one nonlinear function for the correction in dependence on the position of the measurement structures on the wafer. The corrections are applied to the exposure fields after alignment to the alignment marks overformed by the process in dependence on their position on the wafer.

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Dresden, Germany

Martin Rössiger