Carl-zeiss-smt Ag

Carl Zeiss Smt Gmbh

Asml Netherlands B.v.

Martin Lowisch

Wolfgang Singer

Hans-Juergen Mann

Martinus Hendrikus Antonius Leenders

Marcel Mathijs Theodore Marie Dierichs

Udo Dinger

Hans Van Der Laan

Hans-Jürgen Mann

Timo Laufer

Uwe Mickan

Johannes Zellner

Koen Van Ingen Schenau

Frank Eisert

Michael Schottner

Stefan Koehler

Andreas Ochse

Elaine McCoo

A method and lithography device addressing the problem in projection optics of pupil apodization which leads to imaging defects. As here proposed, the illumination system is configured to illuminate the mask inhomogeneously. As a result, inhomogeneities in reflectivity caused by the mask itself are at least partly counteracted. This compensation not only makes the apodization over the pupil become more symmetric but also makes the intensity variation smaller overall.

Method and lithography device with a mask reflecting light

One problem of projection optics concerns pupil apodization which leads to imaging defects. As here proposed, the illumination system is configured to illuminate the mask inhomogeneously. As a result, inhomogeneities in reflectivity caused by the mask itself are at least partly counteracted. This compensation not only makes the apodization over the pupil become more symmetric but also makes the intensity variation smaller overall.

Masks, lithography device and semiconductor component

An objective and method of fabricating an objective, particularly a projection objective for microlithography, comprising a plurality of optical elements. In one example, the method comprises acts of determining groups of optically similar optical elements or surfaces having at least two members, determining wave front deformations by the optical elements or surfaces, determining the necessary corrections for the optical elements or surfaces of a group, and performing the corrections for a group at a group member.

Groupwise corrected objective

A mask having a multilayer coating of a specified period thickness distribution such as those used in lithography devices for producing semiconductor components. One problem of projection optics concerns pupil apodization which leads to imaging defects. As here proposed, the period thickness in the mask plane is selected so that it is greater than the period thickness for maximum reflectivity. As a result, not only does the apodization over the pupil become more symmetric but the intensity variation also becomes smaller overall.

A projection objectivefor short wavelengths, in particular for wavelengths &#x3bb;&#x3c;157 nm is provided with a number of mirrors [MMMMMand Mthat are arranged positioned precisely in relation to an optical axisThe mirrors [MMMMMand Mhave multilayer coatings. At least two different mirror materials are provided which differ in the rise in the coefficient of thermal expansion as a function of temperature in the region of the zero crossing of the coefficients of thermal expansion, in particular in the sign of the size.

Projection objective

System aberrations are effected in a projection system of a lithographic apparatus to optimize imaging of a thick reflective mask with a thick absorber that is obliquely illuminated. The aberrations may include Zastigmatism, Zspherical, and Zastigmatism.

Device manufacturing method and computer program

Growing community of inventors

Oberkochen, Germany

Martin Lowisch