Carl Zeiss Smt Gmbh

Martin Hermann

Oliver Dier

Hartmut Enkisch

Vitaliy Shklover

Kerstin Hild

Andras G Major

Jeffrey Erxmeyer

Stephan Six

Ralf Winter

Peter Vogt

Joern Weber

Sebastian Strobel

Christoph Nottbohm

Christian Grasse

Conrad Wolke

Nils Lundt

Jörn Weber

An optical component comprises a first layer system exhibiting a first wavelength-dependent reflectivity curve when electromagnetic radiation impinges thereon, and at least one second layer system exhibiting a second wavelength-dependent reflectivity curve when electromagnetic radiation impinges thereon. The first layer system and the second layer system are arranged on different optical surfaces. The wavelength dependencies of the first and the second reflectivity curve at least partially compensate one another so that the relative deviation from a desired reflectivity curve which is linear or constant with respect to the wavelength is no more than 5% within the specified wavelength range for a resultant summated reflectivity for the first layer system and the at least one second layer system. An optical system, such as a microlithography projection exposure apparatus, can include such an optical component.

Optical component and optical system, in particular for microlithography

Treating a reflective optical element () for the EUV wavelength range that has a reflective coating on a substrate. The reflective optical element in a holder () is irradiated with at least one radiation pulse of a radiation source () having a duration of between 1 &#x3bc;s and 1 s. At least one radiation source () and the reflective optical element move relative to one another. Preferably, this is carried out directly after applying the reflective coating in a coating chamber (). Reflective optical elements of this type are suitable in particular for use in EUV lithography or in EUV inspection of masks or wafers, for example.

Method for treating a reflective optical element for the EUV wavelength range, method for producing same, and treating apparatus

A mirror element, in particular for a microlithographic projection exposure apparatus. According to one aspect, the mirror element includes a substrate (-) and a layer stack (-) on the substrate. The layer stack has at least one reflection layer system, wherein a curvature of the mirror element is generated on the basis of a setpoint curvature for a predetermined operating temperature by a non-vanishing bending force exerted by the layer stack, wherein the generated curvature varies by no more than 10% over a temperature interval (&#x394;T) of at least 10 K.

Mirror element, in particular for a microlithographic projection exposure apparatus

A mirror (), more particularly for a microlithographic projection exposure apparatus, has an optical effective surface (), a mirror substrate () and a reflection layer stack () for reflecting electromagnetic radiation impinging on the optical effective surface (), wherein a layer () composed of a group III nitride is arranged between the mirror substrate () and the reflection layer stack (), wherein the group III nitride is selected from the group containing gallium nitride (GaN), aluminum nitride (AlN) and aluminum gallium nitride (AlGaN).

Mirror, in particular for a microlithographic projection exposure apparatus

The invention concerns a method of and an arrangement for determining the heating condition of a mirror in an optical system, in particular in a microlithographic projection exposure apparatus. In an embodiment the mirror is an EUV mirror and a method according to the invention comprises the following steps: deflecting at least one input measuring beam on to the mirror; ascertaining at least one optical parameter of at least one output measuring beam produced from the input measuring beam after interaction with the mirror; and determining the heating condition of the mirror on the basis of the parameter.

Method and arrangement for determining the heating condition of a mirror in an optical system

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Heidenheim, Germany

Martin Hermann