Average Co-Inventor Count = 22.78
ph-index = 8
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. Pdf Solutions, Incorporated (82 from 203 patents)
2. Blickfeld Gmbh (1 from 4 patents)
83 patents:
1. 11531089 - Coaxial setup for light detection and ranging, lidar, measurements
2. 11107804 - IC with test structures and e-beam pads embedded within a contiguous standard cell area
3. 11081477 - IC with test structures and e-beam pads embedded within a contiguous standard cell area
4. 11081476 - IC with test structures and e-beam pads embedded within a contiguous standard cell area
5. 11075194 - IC with test structures and E-beam pads embedded within a contiguous standard cell area
6. 11018126 - IC with test structures and e-beam pads embedded within a contiguous standard cell area
7. 10978438 - IC with test structures and E-beam pads embedded within a contiguous standard cell area
8. 10854522 - Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, corner short, and via open test areas
9. 10777472 - IC with test structures embedded within a contiguous standard cell area
10. 10593604 - Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells
11. 10290552 - Methods for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one via-chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from cells with respective tip-to-tip short, via-chamfer short, and corner short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage
12. 10269786 - Integrated circuit containing first and second DOEs of standard Cell Compatible, NCEM-enabled Fill Cells, with the first DOE including tip-to-side short configured fill cells, and the second DOE including corner short configured fill cells
13. 10211111 - Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one corner short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side sort, and corner short test areas
14. 10211112 - Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and side-to-side short test areas
15. 10199294 - Method for processing a semiconductor wafer using non-contact electrical measurements indicative of a least one side-to-side short or leakage, at least one via-chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from cells with respective side-to-side short, via-chamfer short, and corner short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage