Asml Netherlands B.v.

Asml Masktools B.v.

Asml Holding N.v.

Markus Franciscus Antonius Eurlings

Heine Melle Mulder

Marcel Mathijs Theodore Marie Dierichs

Johannes Jacobus Matheus Baselmans

Jan Bernard Plechelmus Van Schoot

Antonius Johannes Josephus Van Dijsseldonk

Paul Van Der Veen

Hendrikus Robertus Marie Van Greevenbroek

Jang Fung Chen

Duan-Fu Stephen Hsu

Adrianus Franciscus Petrus Engelen

Patricius Aloysius Jacobus Tinnemans

Armand Eugene Albert Koolen

Kurt E Wampler

Thomas Laidig

Hako Botma

Wilfred Edward Endendijk

Noel Corcoran

Johannes Hubertus Josephina Moors

Hans Van Der Laan

Noud Jan Gilissen

Oscar Franciscus Jozephus Noordman

Hermanus Johannes Maria Kreuwel

Uwe Hollerbach

Jan Jaap Krikke

Marcel Dierichs

Ramon Mark Hofstra

Erik Roelof Loopstra

Vadim Yevgenyevich Banine

Martinus Hendrikus Antonius Leenders

Arno Jan Bleeker

Jozef Maria Finders

Franciscus Johannes Joseph Janssen

Teunis Willem Tukker

Stanislav Y Smirnov

Donis George Flagello

Yevgeniy Konstantinovich Shmarev

Olav Waldemar Vladimir Frijns

Uwe Mickan

Erik Petrus Buurman

Alexander Matthijs Struycken

Stefan Geerte Kruijswijk

Martinus Van Duijnhoven

Harm-Jan Voorma

Sergey Tarabrin

Antonie Hendrik Verweij

Hrishikesh Patel

Johannes Matheus Marie De Wit

Sergei Sokolov

Judocus Marie Dominicus Stoeldraijer

Koenraad Remi André Maria Schreel

Maikel Adrianus Cornelis Schepers

Igor Petrus Maria Bouchoms

Kevin Weimin Zhang

Niek Antonius Jacobus Maria Kleemans

Jan Hoegee

Johannes Hendrik Everhardus Aldegonda Muijderman

Sumant Sukdew Ramanujan Oemrawsingh

Su-Ting Cheng

Maarten Kees Jan Boon

Jan Bruining

Cornelis Petrus Andreas Marie Luijkx

Cornelis Jacobus Van Duijn

Peter Frans Maria Muys

Tien Nang Pham

Jiun-Cheng Wang

Hendrikus Robertus Marie Greevenbroek

Bernard Jacob Andries Stommen

Jacob Cohen

Pepijn Wijnand Jozef Janssen

Melchior Mulder

Jan Piechelmus Van Schoot

Johannes Hendrick Everardus Aldegonda Muiderman

A technique of measuring a parameter of a patterning process is disclosed. In one arrangement, a target, formed by the patterning process, is illuminated. A sub-order diffraction component of radiation scattered from the target is detected and used to determine the parameter of the patterning process.

Method of measuring a parameter of a patterning process, metrology apparatus, target

An illumination system for a metrology apparatus that can achieve illumination spatial profile flexibility, high polarization extinction ratio, and high contrast. The illumination system includes a polarizing beam splitter (PBS), an illumination mode selector (IMS), and a reflective spatial light modulator (SLM). The PBS divides an illumination beam into sub-beams. The IMS has a plurality of apertures that transmits at least one sub-beam and may be arranged in multiple illumination positions corresponding to illumination modes. A pixel array of the reflective SLM and reflects a portion of the sub-beam transmitted by the IMS back to the IMS and PBS. The PBS, IMS, SLM collectively generates a complex amplitude or intensity spatial profile of the transmitted sub-beam.

Method and device for pupil illumination in overlay and critical dimension sensors

A beam homogenizer for homogenizing a beam of radiation and an illumination system and metrology apparatus comprising such a beam homogenizer as provided. The beam homogenizer comprises a filter system having a controllable radial absorption profile and configured to output a filtered beam and an optical mixing element configured to homogenize the filtered beam. The filter system may be configured to homogenize the angular beam profile radially and said optical mixing element may be configured to homogenize the angular beam profile azimuthally.

Beam homogenizer, illumination system and metrology system

A beam delivery apparatus is used with a laser produced plasma source. The beam delivery apparatus comprises variable zoom optics () operable to condition a beam of radiation so as to output a conditioned beam having a configurable beam diameter (b) and a plurality of mirrors () operable to direct the conditioned beam of radiation to a plasma generation site. The beam delivery apparatus enables control of the axial position of the beam where the beam has a particular diameter, with respect to the beam's focus position (). Also, a method is used to control the axial position of the location at a plasma generation site where a beam has a particular diameter, with respect to the beam's focus position.

Beam delivery for EUV lithography

A device manufacturing method includes conditioning a beam of radiation using an illumination system. The conditioning includes controlling an array of individually controllable elements and associated optical components of the illumination system to convert the radiation beam into a desired illumination mode, the controlling including allocating different individually controllable elements to different parts of the illumination mode in accordance with an allocation scheme, the allocation scheme selected to provide a desired modification of one or more properties of the illumination mode, the radiation beam or both. The method also includes patterning the radiation beam having the desired illumination mode with a pattern in its cross-section to form a patterned beam of radiation, and projecting the patterned radiation beam onto a target portion of a substrate.

Lithographic apparatus and method

A laser radiation source for a lithographic tool comprising a laser module to emit a first laser beam having a first wavelength and a second laser beam having a second wavelength, a beam separation device to separate the optical paths of the first and second laser beams and substantially recombine the optical paths, a beam delivery system to direct the first and second laser beams to a fuel target and an optical isolation apparatus to: adjust the polarization state of the first laser beam, adjust the polarization state of the second laser beam and to block radiation having the adjusted polarization states such that the reflection of the first laser beam and the reflection of the second laser beam are substantially blocked from propagating towards the laser module.

Radiation source

A faceted reflector (&#x2033;) for receiving an incident radiation beam () and directing a reflected radiation beam at a target. The faceted reflector comprises a plurality of facets, each of the plurality of facets comprising a reflective surface. The reflective surfaces of each of a first subset of the plurality of facets define respective parts of a first continuous surface and are arranged to reflect respective first portions of the incident radiation beam in a first direction to provide a first portion of the reflected radiation beam. The reflective surfaces of each of a second subset of the plurality of facets define respective parts of a second continuous surface and are arranged to reflect respective second portions of the incident radiation beam in a second direction to provide a second portion of the reflected radiation beam.

A radiation source includes a nozzle configured to direct a stream of fuel droplets along a droplet path towards a plasma formation location, and is configured to receive a gaussian radiation beam having gaussian intensity distribution, having a predetermined wavelength and propagating along a predetermined trajectory, and further configured to focus the radiation beam on a fuel droplet at the plasma formation location. The radiation source includes a phase plate structure including one or more phase plates. The phase plate structure has a first zone and a second zone. The zones are arranged such that radiation having the predetermined wavelength passing through the first zone and radiation having the predetermined wavelength passing through the second zone propagate along respective optical paths having different optical path lengths. A difference between the optical path lengths is an odd number of times half the predetermined wavelength.

Radiation source and lithographic apparatus

A lithographic apparatus includes an illumination system for providing a beam of extreme ultra-violet radiation, a masking device for controlling the illumination of a patterning device by the beam of radiation, a support for supporting the patterning device, the patterning device configured to impart a pattern to the beam of radiation, a substrate table for holding a substrate, and a projection system for projecting the patterned beam of radiation onto a target portion of the substrate. The masking device includes a masking blade including a masking edge configured to delimit a boundary of an illumination region on the patterning device. The masking blade is configured to reflect extreme ultra-violet radiation incident on the masking blade such that at least a portion of the reflected radiation is not captured by the projection system.

Lithographic apparatus and method for reducing stray radiation

A device manufacturing method includes conditioning a beam of radiation using an illumination system. The conditioning includes controlling an array of individually controllable elements and associated optical components of the illumination system to convert the radiation beam into a desired illumination mode, the controlling including allocating different individually controllable elements to different parts of the illumination mode in accordance with an allocation scheme, the allocation scheme selected to provide a desired modification of one or more properties of the illumination mode, the radiation beam or both. The method also includes patterning the radiation beam with a pattern in its cross-section to form a patterned beam of radiation, and projecting the patterned radiation beam onto a target portion of a substrate.

A lithographic apparatus comprising a source that generates a beam of radiation, a support structure supporting a patterning device, a substrate table for holding a substrate, and a projection system projecting the patterned radiation beam onto a target portion of the substrate. The lithographic apparatus further comprises a vibration measurement apparatus configured to measure relative vibration between the patterning device and the substrate during exposure of the target portion. A control apparatus adjusts power of the radiation beam to compensate for the effect of the measured relative vibration on the pattern projected onto the substrate.

A radiation source includes a fuel supply configured to deliver fuel to a plasma emission location for vaporization by a laser beam to form a plasma, and a collector configured to collect EUV radiation emitted by the plasma and direct the EUV radiation towards an intermediate focus. The collector includes a diffraction grating configured to diffract infrared radiation emitted by the plasma. The radiation source includes a radiation conduit located in between the collector and the intermediate focus. The radiation conduit includes an entrance aperture connected by an inwardly tapering body to an exit aperture. The radiation conduit includes an inner portion and an outer portion, the inner portion being closer to the intermediate focus than the outer portion. The inner portion is configured to reflect incident diffracted infrared radiation towards the outer portion.

Radiation conduit for radiation source

A lithographic projection system has an illumination system with a polarization member. A plurality of directing elements reflect different sub-beams of an incident beam into adjustable, individually controllable directions. By means of re-directing optics any desired polarized spatial intensity distribution of the beam can be produced in its cross-sectional plane.

Lithographic apparatus and device manufacturing method

Growing community of inventors

Tilburg, Netherlands

Markus Franciscus Antonius Eurlings