Tegal Corporation

Mark M Stark

Roger B Lachenbruch

David J Drage

Douglas H Warenback

Shu Nakajima

A plasma etch process and apparatus is disclosed in which a gas mixture comprises CF.sub.3 Br, xenon or krypton, and oxygen. The plasma reactor includes a sacrificial element, preferably in the form of a graphite ring, on the lower electrode of a parallel plate reactor.

Xenon enhanced plasma etch

A gas inlet having a non-uniform array of inlet holes for the non-uniform introduction of an etching gas into a reaction chamber of a dry etching apparatus. The non-uniform introduction of gas compensates for non-uniform characteristics in the dry etching apparatus resulting in a uniform etch.

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Kamakura, Japan

Mark M Stark