Air Products and Chemicals, Inc.

Versum Materials US, LLC

Tokyo Electron Limited

The University of Texas System

Mark Leonard O'Neill

Manchao Xiao

Raymond Nicholas Vrtis

Xinjian Lei

Xiaobo Shi

Haripin Chandra

Bing Han

Jean Louise Vincent

Aaron Scott Lukas

Hongjun Zhou

Krishna P Murella

Joseph D Rose

Eugene Joseph Karwacki, Jr

Ronald Martin Pearlstein

Steven Gerard Mayorga

Meiliang Wang

Anupama Mallikarjunan

Richard Ho

Dnyanesh Chandrakant Tamboli

Daniel P Spence

Andrew David Johnson

Heather Regina Bowen

Reinaldo Mario Machado

John Anthony Thomas Norman

Matthew R MacDonald

James Allen Schlueter

Scott Jeffrey Weigel

Robert Gordon Ridgeway

Brian Keith Peterson

Dingjun Wu

Lloyd Mahlon Robeson

Jianheng Li

Jo-Ann Theresa Schwartz

Hansong Cheng

Takashi Matsumoto

Keith P Johnston

Madhukar Bhaskara Rao

Jacques Faguet

Moo-Sung Kim

Mark Daniel Bitner

Laura M Matz

Mary Kathryn Haas

Kirk Scott Cuthill

John Edward Quincy Hughes

Malcolm Grief

Dino Sinatore

Liu Yang

Agnes Derecskei-Kovacs

Steven Charles Winchester

Patrick Timothy Hurley

Andrew J Dodd

Howard P Withers, Jr

Aiping Wu

William Franklin Burgoyne, Jr

Matthias Stender

Michael Langsam

Eric M Lee

Richard Henry Bott

John Giles Langan

Stephen Andrew Motika

Peter James Maroulis

Carrington Duane Smith

Xuezhong Jiang

Kelly Ann Chandler

Bing Ji

Ming-Shih Tsai

Scott Edward Beck

Hoshang Subawalla

Steven Paul Wilkinson

Osayuki Akiyama

Simon Mawson

Agnes Derecskei

Glenn Michael Mitchell

Michael T Savo

Chris Keh-Yeuan Li

Rung-Je Yang

Blake J Lew

Timothy Joseph Clore

Chia-Chien Lee

Chad Chang-Tse Hsieh

Chun Lu

Jean Louis Vincent

Eugene Jospeh Karwacki, Jr

Eugene Joseph Karwacki

Chandra Haripin

Matthew R Macdonald

Pao-Chia Pan

Howard Paul Withers, Jr

Malcom Grief

Jr Eugene Joseph Karwacki

Xiao Manchao

Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates; low oxide trench dishing, and high oxide: SiN selectivity. Dual chemical additives comprise at least one silicone-containing compound comprising at least one of (1) ethylene oxide and propylene oxide (EO-PO) group, and at least one of substituted ethylene diamine group on the same molecule; and (2) at least one non-ionic organic molecule having at least two, preferably at least four hydroxyl functional groups.

Low dishing oxide CMP polishing compositions for shallow trench isolation applications and methods of making thereof

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

Organoaminosilane precursors and methods for depositing films comprising same

High oxide film removal rate Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods, and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and a chemical additive for providing a high oxide film removal rate. The chemical additive is a gelatin molecule possessing negative and positive charges on the same molecule.

High oxide film removal rate shallow trench (STI) chemical mechanical planarization (CMP) polishing

Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of RN(SiRLH), wherein R, R, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

Compositions and processes for depositing carbon-doped silicon-containing films

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO:SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.

Low oxide trench dishing chemical mechanical polishing

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO:SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(&#x2212;)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Using the CMP slurries with additives to counter lowering of pH by tungsten polishing byproducts and maintain pH 4 or higher, the erosion of dense metal (such as tungsten) structures can be greatly diminished.

Tungsten chemical mechanical polishing for reduced oxide erosion

Described herein are low temperature processed high quality silicon containing films. Also disclosed are methods of forming silicon containing films at low temperatures. In one aspect, there are provided silicon-containing film having a thickness of about 2 nm to about 200 nm and a density of about 2.2 g/cmor greater wherein the silicon-containing thin film is deposited by a deposition process selected from a group consisting of chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), cyclic chemical vapor deposition (CCVD), plasma enhanced cyclic chemical vapor deposition (PECCVD, atomic layer deposition (ALD), and plasma enhanced atomic layer deposition (PEALD), and the vapor deposition is conducted at one or more temperatures ranging from about 25&#xb0; C. to about 400&#xb0; C. using an alkylsilane precursor selected from the group consisting of diethylsilane, triethylsilane, and combinations thereof.

Compositions and methods for making silicon containing films

Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates. Chemical additives comprise at least one nitrogen-containing aromatic heterocyclic compound and at least one non-ionic organic molecule having more than one hydroxyl functional group organic.

Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates

The present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic metal oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the first group of non-ionic organic molecules multi hydroxyl functional groups in the same molecule; chemical additives selected from the second group of aromatic organic molecules with sulfonic acid group or sulfonate salt functional groups and combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.

Oxide chemical mechanical planarization (CMP) polishing compositions

Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise solvent, abrasive, at least three chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefor; wherein at least one chelator is an amino acid or an amino acid derivative. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide are used in the formulations.

Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications

Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing high oxide film removal rate. The dual chemical additives comprise gelatin compounds possessing negative and positive charges on the same molecule, and non-ionic organic molecules having multi hydroxyl functional groups in the same molecule.

Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with low abrasive concentration and a combination of chemical additives

The present invention discloses STI CMP polishing compositions, methods and systems that significantly reduce oxide trench dishing and improve over-polishing window stability in addition to provide high and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable high selectivity of SiO:SiN through the use of an unique combination of ceria inorganic oxide particles, such as ceria coated silica particles as abrasives, and an oxide trench dishing reducing additive of poly(methacrylic acids), its derivatives, its salts, or combinations thereof.

Low oxide trench dishing shallow trench isolation chemical mechanical planarization polishing

Present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the group consisting of an organic acetylene molecule containing an acetylene bond and at least two or multi ethoxylate functional groups with terminal hydroxyl groups, an organic molecule with at least two or multi hydroxyl functional groups in the same molecule, and combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.

Suppressing SiN removal rates and reducing oxide trench dishing for Shallow Trench Isolation (STI) process

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below:  In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350&#xb0; C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

Growing community of inventors

San Marcos, CA, United States of America

Mark Leonard O'Neill