Novellus Systems Incorporated

Lam Research Corporation

Mark L Rea

Steven T Mayer

Henner Meinhold

Bryan L Buckalew

John Stephen Drewery

Eric G Webb

R Marshall Stowell

Richard S Hill

Avishai Kepten

Sachin M Chinchwadkar

Jonathan David Reid

Thomas Anand Ponnuswamy

Lee Peng Chua

Ismail Emesh

Fred J Chetcuti

Wayne Cai

Certain embodiments herein relate to methods and apparatus for processing a partially fabricated semiconductor substrate in a remote plasma environment. The methods may be performed in the context of wafer level packaging (WLP) processes. The methods may include exposing the substrate to a reducing plasma to remove photoresist scum and/or oxidation from an underlying seed layer. In some cases, photoresist scum is removed through a series of plasma treatments involving exposure to an oxygen-containing plasma followed by exposure to a reducing plasma. In some embodiments, an oxygen-containing plasma is further used to strip photoresist from a substrate surface after electroplating. This plasma strip may be followed by a plasma treatment involving exposure to a reducing plasma. The plasma treatments herein may involve exposure to a remote plasma within a plasma treatment module of a multi-tool electroplating apparatus.

Pretreatment method for photoresist wafer processing

Disclosed are methods of electroplating a metal onto a substrate surface in an electroplating bath and adjusting the pH of the bath. The methods may include exposing the substrate surface, a counter-electrode, and an acid generating surface to the bath, biasing the substrate surface sufficiently negative relative to the counterelectrode such that metal ions from the bath are reduced and plated onto the substrate surface, and biasing the acid generating surface sufficiently positive relative to the counterelectrode such that free hydrogen ions are generated at the acid generating surface thereby decreasing the pH of the bath. Also disclosed are apparatuses for electroplating metal onto a substrate surface in an electroplating bath, and for adjusting the pH of the electroplating bath. The apparatuses may include an acid generating surface configured to generate free hydrogen ions in the bath upon supply of sufficient positive voltage bias relative to a counterelectrode electrical contact.

Apparatuses and methods for controlling PH in electroplating baths

Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.

Topography reduction and control by selective accelerator removal

A disclosed form of mechanically assisted electroplating leads to a flat, thin, overburden. In one example, an accelerator is deposited on a copper surface and mechanically removed in a simplified CMP-like apparatus. The wafer is then plated in an electrolyte containing little or no accelerating additives.

Method for planar electroplating

In one embodiment, an integrated circuit (IC) fabrication material is dispensed from a print head by dividing its nozzles into several groups, and sequentially allowing each group to fire. The nozzles may be grouped based on the amounts of material they dispense. For example, the nozzles may be grouped by drop volume or drop mass. In one embodiment, an IC fabrication material is dispensed on a substrate by controlling a firing sequence of a nozzle to promote merging of material on the substrate. The firing sequence may also be altered to take into account the firing sequence of adjacent nozzles.

Deposition of integrated circuit fabrication materials using a print head

In one embodiment, a sensor includes two plates that form a capacitor. A droplet passing between the plates changes the capacitance of the sensor, thereby triggering an amplifier coupled to the sensor to generate an output signal. The output signal is indicative of droplet characteristics and may be used to calibrate a mechanism that dispensed the droplet.

Sensor for detecting droplet characteristics

Growing community of inventors

Tigard, OR, United States of America

Mark L Rea