Tokyo Electron Limited

Texas Instruments Corporation

Osaka University

Mark H Somervell

Benjamen M Rathsack

Michael Carcasi

Steven A Scheer

Joshua Hooge

Carlos A Fonseca

Brian Keith Kirkpatrick

Rajesh B Khamankar

Husam N Alshareef

Seiji Nagahara

Malcolm John Bevan

Ian J Brown

Wallace Paul Printz

April Gurba

Clinton L Montgomery

Ryan Burns

Benjamin M Rathsack

Masahide Tadokoro

Makoto Muramatsu

Ihsan Simms

Kathleen Nafus

David C Hall

Ainhoa Negreira

Hidetami Yaegashi

Robert Kraft

Ping Jiang

Masashi Enomoto

Lior Huli

Kenichi Oyama

Tadatoshi Tomita

Seiichi Tagawa

Roel Gronheid

Hisashi Genjima

Joel Estrella

Yuichiro Kunugimoto

Corey Lemley

Hiroyuki Iwaki

David Hetzer

Meenakshisundaram Gandhi

Sophie Bernard

Steven Scheer

Congque Dinh

Josh Hooge

The disclosure herein describes methods for Photosensitized Chemically Amplified Resist Chemicals (PS-CAR) to pattern light sensitive films (e.g., photoresist on anti-reflective coatings) on a semiconductor substrate. In one embodiment, a two-step exposure process may generate higher acid concentration regions within a photoresist layer. The PS-CAR chemicals may include photoacid generators (PAGs) and photosensitizer elements that enhance the decomposition of the PAGs into acid. The first exposure may be a patterned EUV or UV exposure that generates an initial amount of acid and photosensitizer. The second exposure may be a non-EUV flood exposure that excites the photosensitizer which increases the acid generation rate where the photosensitizer is located in the film stack. The distribution of energy during the exposures may be optimized by using certain characteristics (e.g., thickness, index of refraction, doping) of the photoresist layer, an underlying layer, and/or an overlying layer.

Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists

Embodiments are described herein to monitor and synchronize dispense systems for processing systems. For one embodiment, pressure and flow rate sensors are used to determine a delay between a flow change event and an increase in flow rate, and this delay is used to detect defects or conditions within the dispense system. For one embodiment, dispense system operation is synchronized using flow rate sensors. For one embodiment, simulation models or complex dispense profiles based upon combined pressure/flow/spin/concentration sensor data are used to enable complex process recipes. For one embodiment, dispense-to-dispense pressure and/or flow rate measurements are used to detect dispense parameters and defects. For one embodiment, cameras and image processing are used to detect flow rates from the dispense nozzle, and dispense-to-dispense measurements are used to detect dispense parameters and defects. One or more of the disclosed embodiments can be used in processing systems for microelectronic workpieces.

Methods and systems to monitor, control, and synchronize dispense systems

Camera images may be utilized to detect substrate edges and provide information regarding the centering of the substrate within the fluid dispense system. Camera images may also be utilized to monitoring the location of a cup within the fluid dispense system. The signal processing techniques utilized may include data smoothing, analyzing only certain wavelengths of reflected energy, transforming the data (in one embodiment utilizing a Fourier transform), and/or analyzing a sub-set of the collected pixels of data. The camera image data collected herein may be combined with a wide variety of other data so as to better monitor, characterize and/or control a substrate processing process flow.

Systems and methods for spin process video analysis during substrate processing

A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 mn.

UV-assisted stripping of hardened photoresist to create chemical templates for directed self-assembly

A substrate inspection system is provided to monitor characteristics of a substrate, while the substrate is disposed within (or being transferred into/out of) a processing unit of a liquid dispense substrate processing system. The inspection system is integrated within a liquid dispense substrate processing system and includes one or more optical sensors of a reflectometer (such as a spectrometer or laser-based transceiver) configured to obtain spectral data from a substrate. A controller is coupled to receive the spectral data from the optical sensors(s). The one or more optical sensors (or one or more optical fibers coupled to the rest of the optical sensor hardware) are coupled at locations within the substrate processing system. The controller analyzes the spectral data received from the optical sensors(s) to detect characteristic(s) of the substrate including, but not limited to, film thickness (FT), refractive index changes, and associated critical dimension (CD) changes.

Systems and methods for monitoring one or more characteristics of a substrate

In certain embodiments, a method for processing a substrate includes applying a surface treatment to selected surfaces of the substrate. The substrate has a non-planar topography including structures defining recesses. The method further includes depositing a fill material on the substrate by spin-on deposition. The surface treatment directs the fill material to the recesses and away from the selected surfaces to fill the recesses with the fill material without adhering to the selected surfaces. The method further includes removing the surface treatment from the selected surfaces of the substrate and depositing a planarizing film on the substrate by spin-on deposition. The planarizing film is deposited on the selected surfaces and top surfaces of the fill material.

Planarization of semiconductor devices

Methods used to more accurately predict spin on layer planarization over a patterned topography are provided. Methods are provided for generating a layer critical dimension model. In one embodiment, the critical dimension model is a layer thickness model that more accurately simulates patterned topography trends, as a function of feature dimensions, surrounding pattern density and radial position across the patterned topography. Additional methods are provided for calibrating the layer thickness model over one or more spatial areas to account for radial variations in the patterned topography. Further methods are provided for using one or more calibrated layer thickness models to predict a thickness of a layer (e.g., a spin on coating) as it is being deposited onto a patterned substrate. The methods disclosed herein may facilitate the planarization (i.e., flatness) of spin-on coatings during the device fabrication to form a uniformly planar layer or layer on the substrate.

Predicting across wafer spin-on planarization over a patterned topography

Various embodiments of monitoring systems and methods are disclosed herein to monitor particulate accumulation within a bake chamber configured to thermally treat substrates, and determine when the bake chamber requires cleaning. Embodiments of the disclosed monitoring system may generally include one or more sensors to monitor particulate accumulation on one or more inside surfaces of a bake chamber and/or a bake chamber lid assembly, and a controller, which is coupled to receive a sensor output from the one or more sensors and configured to use the sensor output to determine when cleaning is needed. Various types of sensors including, but not limited to, optical sensors, and surface acoustic wave-based sensors may be used in the present disclosure to monitor particulate accumulation inside the bake chamber.

Systems and methods to monitor particulate accumulation for bake chamber cleaning

Described herein are technologies to facilitate device fabrication, especially those that involve spin coatings of a substrate. More particularly, technologies described herein facilitate the planarization (i.e., flatness) of spin coatings during the device fabrication to form a uniformly planar film or layer on the substrate. This abstract itself is not intended to limit the scope of this patent. The scope of the present invention is pointed out in the appending claims.

System and method of planarization control using a cross-linkable material

Substrate processing techniques to alleviate missing contact holes, scummed contact holes and scummed caused bridging are disclosed. In one embodiment, electromagnetic radiation (EMR) absorbing molecules are utilized in a process that uses an initial patterned exposure followed by a flood exposure. In one embodiment, a Photo-Sensitized Chemically-Amplified Resist (PSCAR) resist process is utilized to form contact holes in which an initial exposure and develop process is performed followed by a flood exposure and a second develop process. In another embodiment, a process is utilized in which precursors of EMR absorbing molecules are incorporated into a layer underlying the resist layer. Thus, enhanced formation of EMR absorbing molecules will result at the interface of the resist layer and the underlying layer.

Method and process for stochastic driven detectivity healing

A patterning method is provided in which a light-sensitive layer is formed, and a target resolution is defined for a pattern to be formed in a target layer. Based on a reference dose and reference LWR that results from a single patterning exposure at an EUV wavelength, the target resolution and reference dose, the light-sensitive layer is subjected to at least two radiation exposures including an EUV patterning exposure at a dose selected to be less than the reference dose and within 15 mJ/cm-200 mJ/cm, and a flood exposure at a wavelength of 200 nm-420 nm and a dose of 0.5 J/cm-20 J/cm. The light-sensitive layer is then developed to form a mask pattern, which is used to etch the pattern into the target layer with the target resolution and a LWR less than or approximately equal to the reference LWR and &#x2264;5 nm.

Methods for sensitizing photoresist using flood exposures

Various embodiments of systems and methods for drain line monitoring are disclosed herein. More specifically, a liquid dispense unit for a coating/developing processing system is provided herein for applying one or more liquid solutions to a substrate disposed within the liquid dispense unit. In the disclosed embodiments, a pH sensor and/or a line particle counter (LPC) is coupled to a drain line of the liquid dispense unit to monitor various parameters of the liquid waste, which is ejected from the substrate and disposed of through the drain line. In some embodiments, measurements obtained from the pH sensor may be used to optimize a develop process by detecting an endpoint of the develop process, avoiding pH shock and/or detecting excursions in the develop process. In some embodiments, measurements obtained from the LPC may additionally or alternatively be used to optimize the develop process.

Systems and methods for developer drain line monitoring

Described herein are technologies to facilitate device fabrication, especially those that involve spin-on coatings of a substrate (e.g., wafer). More particularly, technologies described herein facilitate the planarization (i.e., flatness) of spin-on coatings during the device fabrication to form a uniformly planar film or layer on the substrate. This abstract itself is not intended to limit the scope of this patent. The scope of the present invention is pointed out in the appending claims.

Facilitation of spin-coat planarization over feature topography during substrate fabrication

A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 nm.

Methods and systems for PS-CAR photoresist simulation are described. In an embodiment, a method includes determining by simulation at least one process parameter of a lithography process using a radiation-sensitive material. In such an embodiment, the radiation-sensitive material includes: a first light wavelength activation threshold that controls the generation of acid to a first acid concentration in the radiation-sensitive material and controls generation of photosensitizer molecules in the radiation-sensitive material, and a second light wavelength activation threshold that can excite the photosensitizer molecules in the radiation-sensitive material that results in the acid comprising a second acid concentration that is greater than the first acid concentration, the second light wavelength being different from the first light wavelength. In such an embodiment, the method also includes performing a lithography process using the previously-determined at least one process parameter.

Photo-sensitized chemically amplified resist (PS-CAR) simulation

Growing community of inventors

Richardson, TX, United States of America

Mark H Somervell