Speedfam-ipec Corporation

Mark A Meloni

Clinton O Fruitman

Paul L Holzapfel

Thomas Laursen

Robert A Eaton

Malcolm Grief

Matthew Weldon

Andrew M Yednak, Iii

Periya Gopalan

John Natalicio

Inki Kim

Mike Park

The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.

Multiprobe detection system for chemical-mechanical planarization tool

The present invention is an apparatus and method for manufacturing a window into a polishing pad used during a planarization process of a front surface of a wafer. A hole is created in the polishing pad at a location where a window is desired. A first release film may be pressed against the working surface of the polishing pad thereby covering one end of the hole. Window material of suitable mechanical, chemical and optical properties is cast in the hole. A second release film may also be pressed against the bottom surface of the polishing pad covering the other end of the hole. The window material is preferably cured with light to quickly form and bond the window into the hole. The release films may be removed leaving the cast window in the polishing pad.

Polishing pad window for a chemical mechanical polishing tool

A method and apparatus for the in-process measurement of the thickness and composition of a material layer on a workpiece during chemical mechanical polishing are disclosed. The chemical mechanical polishing apparatus includes a platen having a polishing pad mounted thereto and an x-ray probe assembly mounted into a recessed volume in the platen. The x-ray probe assembly includes an x-ray emitter and an x-ray detector. The thickness and composition of the material layer on the workpiece is measured by generating and directing an incident x-ray beam onto a location on the surface of the wbrkpiece, and then capturing the resultant fluorescent beam and processing data from the resultant fluorescent beam.

Methods and apparatus for the in-situ measurement of CMP process endpoint

An improved workpiece carrier assembly includes a workpiece retaining assembly having a plurality of distinct retaining elements rather than a one-piece retaining ring. In accordance with one embodiment, a plurality of retaining segments reside within a like plurality of channels. The retaining segments may be individually or collectively controlled by a pressurized fluid system. In accordance with an alternate embodiment, a plurality of retaining pins reside within a like plurality of guide sleeves. The retaining pins may be individually or collectively controlled by a pressurized fluid system.

Workpiece carrier with segmented and floating retaining elements

A system and method for detecting process endpoint in CMP is presented which monitors the progression of chemical activities that take place from the chemical reaction that occurs at the wafer surface during polishing. In order to monitor the progression of chemical activities taking place from the chemical reaction, a surface plasmon resonance sensor acts as a conducting surface which supports surface plasmon resonance.

System and method for detecting CMP endpoint via direct chemical monitoring of reactions

A method and apparatus for resurfacing a polishing pad using non-abrasive techniques. These techniques include shaving, milling, or planing the upper working surface of the polishing pad using an edged cutting tool to alter the microtexture and micro-topology of the surface to produce a desired surface contour or planarity. This precise conditioning of the microscopic features of the polishing pad surface controls dishing in workpieces during polishing.

Non-abrasive conditioning for polishing pads

Method and apparatus for in-situ measurement of workpiece displacement during chemical mechanical polishing are disclosed. The chemical mechanical polishing apparatus includes a platen having a polishing material attached thereto and a distance measurement device attached to the platen. The distance measurement device includes a light source and a light sensor. Distance between the device and the workpiece is measured by transmitting light through apertures formed within the platen and the polishing material toward the workpiece and focusing the light reflected from the workpiece on an element within the sensor.

Method and apparatus for in-situ measurement of workpiece displacement during chemical mechanical polishing

An apparatus for use with a chemical mechanical planarization (CMP) system includes an ultrasonic source that is disposed proximate a workpiece carrier. The ultrasonic source generates an ultrasonic signal toward an area of a polishing pad or a workpiece during the polishing of the workpiece held by the carrier. An ultrasonic detector is configured to receive a reflected ultrasonic signal for processing in order to determine the presence of extraneous material at the area of the polishing pad.

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Lewisville, TX, United States of America

Mark A Meloni