Sharp Laboratories of America, Inc

Mark A Burgholzer

Sheng Teng Hsu

Tingkai Li

Bruce Dale Ulrich

Ray A Hill

A dry etch process is described for selectively etching silicon nitride from conductive oxide material for use in a semiconductor fabrication process. Adding an oxidant in the etch gas mixture could increase the etch rate for the silicon nitride while reducing the etch rate for the conductive oxide, resulting in improving etch selectivity. The disclosed selective etch process is well suited for ferroelectric memory device fabrication using conductive oxide/ferroelectric interface having silicon nitride as the encapsulated material for the ferroelectric.

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Amboy, WA, United States of America

Mark A Burgholzer