Advanced Technology Materials, Inc.

Entegris, Inc.

Mark A Biscotto

Emanuel Israel Cooper

Michael B Korzenski

William R Bowers

Kevin Paul Yanders

Eileen Sparks

Prerna Sonthalia

Nicole E Thomas

Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100&#xb0; C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 &#x212b; min.

Compositions and methods for the selective removal of silicon nitride

Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100&#xb0; C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 &#x212b; min.

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Burnet, TX, United States of America

Mark A Biscotto