International Business Machines Corporation

Mario John Interrante

Sudipta Kumar Ray

William Edward Sablinski

Raymond A Jackson

Katsuyuki Sakuma

John Ulrich Knickerbocker

Laertis Economikos

Michael Jay Shapiro

Shaji Farooq

Kathleen Ann Stalter

Edward F Handford

Mukta G Farooq

Bing Dang

Thomas Anthony Wassick

Lester W Herron

Thomas Edward Lombardi

Lewis Sigmund Goldmann

Luc Gilbert Guerin

Brenda Lee Peterson

Michael Berger

Joseph M Harvilchuck

Gregory Blair Martin

Stephen Anthony DeLaurentis

Van Thanh Truong

Frank Louis Pompeo

Subhash Laxman Shinde

Peter Jeffrey Brofman

William E Bernier

Son K Tran

Glenn A Pomerantz

Harvey Charles Hamel

Mark G Courtney

Raj N Master

Jeffrey Thomas Coffin

Thomas P Moyer

Thuy L Tran-Quinn

Eugene Tas

Michael A Gaynes

David Clifford Long

Charles Leon Arvin

Bucknell Chapman Webb

Thomas Weiss

Hilton T Toy

Benjamin V Fasano

Jeffrey Allen Zitz

Sushumna Iruvanti

Mark J LaPlante

Charles Hampton Perry

How Tzu Lin

Steven Paul Ostrander

David James Alcoe

Harsaran S Bhatia

David Hirsch Danovitch

Mitchell S Cohen

Raed A Sherif

Shashi D Malaviya

Randall Joseph Stutzman

Amit Kumar Sarkhel

Herbert I Stoller

David C Linnell

Karl J Puttlitz, Sr

Renee L Weisman

Marcus E Interrante

Suresh D Kadakia

Mark Budman

Norman G Ainslie

Gary Lafontant

Mark Harrison McLeod

Paul H Palmateer

Stephen S Drofitz, Jr

Paul A Zucco

Scott R Dwyer

Amy B Ostrander

L Wynn Herron

Megan J Shannon

Scott A Bradley

Kevin G Bivona

William J King, Jr

John F Sullivan

Christopher Todd Spring

Marlene W Moyer

An interposer sandwich structure includes a top interposer and a bottom interposer enclosing an integrated circuit electronic device that includes an attachment for attaching the device to the bottom interposer, and an interconnection structure connecting the top interposer to the bottom interposer. The top interposer may also be directly connected to a chip carrier in addition to the bottom interposer. The structure provides shielding and protection of the device against Electrostatic Discharge (ESD), Electromagnetic Interference (EMI), and Electromagnetic Conductivity (EMC) in miniaturized 3D packaging.

Silicon interposer sandwich structure for ESD, EMC, and EMC shielding and protection

A interposer sandwich structure comprises a top interposer and a bottom interposer enclosing an integrated circuit electronic device that includes means for attaching the device to the bottom interposer, and an interconnection structure connecting the top interposer to the bottom interposer. The top interposer may also be directly connected to a chip carrier in addition to the bottom interposer. The structure provides shielding and protection of the device against Electrostatic Discharge (ESD), Electromagnetic Interference (EMI), and Electromagnetic Conductivity (EMC) in miniaturized 3D packaging.

A method of forming a 3D package. The method may include joining an interposer to a laminate chip carrier with the solid state diffusion of a first plurality of solder bumps by applying a first selective non-uniform heat and first uniform pressure; joining a top chip to the interposer with the solid state diffusion of a second plurality of solder bumps by applying a second selective non-uniform heat and second uniform pressure; heating the 3D package, the first and second pluralities of solder bumps to a temperature greater than the reflow temperature of the first and second pluralities of solder bumps, where the second plurality of solder bumps achieves the reflow temperature before the first plurality of solder bumps, where the first and second selective non-uniform heats being less that the reflow temperature of the first and second pluralities of solder bumps, respectively.

Selective area heating for 3D chip stack

A method of bonding components is disclosed. One embodiment of such a method includes applying both heat and pressure to a stack of components that includes an interposer with a reduced degree of warpage. Reducing the distance between the interposer and a first component of the stack of the components until a spacer prevents further reduction of that space. Then, cooling the stack of components while the pressure is maintained such that the degree of warpage of the interposer remains reduced.

Integrated circuit bonding with interposer die

An interposer structure containing a first set of solder balls is placed in proximity to a vacuum distribution plate which has a planar contact surface and a plurality of openings located therein. A vacuum is then applied through the openings within the vacuum distribution plate such that the first set of solder balls are suspended within the plurality of openings and the interposer structure conforms to the planar contact surface of the vacuum distribution plate. A semiconductor chip containing a second set of solder balls is tacked to a surface of the interposer structure. A substrate is then brought into contact with a surface of the interposer structure containing the first set of solder balls, and then a solder reflow and underfill processes can be performed. Warping of the interposer structure is substantially eliminated using the vacuum distribution plate mentioned above.

3D bond and assembly process for severely bowed interposer die

A method of forming a 3D package including joining an interposer to a laminate chip carrier with the solid state diffusion of a first plurality of solder bumps by applying a first selective non-uniform heat, a first selective non-uniform cooling, and first uniform pressure, joining a top chip to the interposer with the solid state diffusion of a second plurality of solder bumps by applying a second selective non-uniform heat and second uniform pressure, heating the 3D package and the first and second pluralities of solder bumps to a temperature greater than the reflow temperature of the first and second pluralities of solder bumps, where the second plurality of solder bumps achieves the reflow temperature before the first plurality of solder bumps, where a temperature of the first and second selective non-uniform heat is less than the reflow temperature of the first and second pluralities of solder bumps, respectively.

A method for packaging a semiconductor device includes attaching a first array of solder material to a first surface of an interposer; bringing the first array of solder material into physical contact with a laminate; and initially bonding the interposer to the laminate by applying a first temperature and pressure gradient to the first array of solder material such that a melting temperature of the first array of solder material is not exceeded.

3D assembly for interposer bow

A method for forming an integrated circuit assembly comprises forming first solder bumps on a first die, and forming a first structure comprising the first die, the first solder bumps, a first flux, and a first substratum. The first die is placed upon the first substratum. The first solder bumps are between the first die and the first substratum. The first flux holds the first die substantially flat and onto the first substratum.

Method for forming integrated circuit assembly

A solder ball contact and a method of making a solder ball contact includes: a first insulating layer with a via formed on an integrated circuit (IC) chip and a metal pad; an under bump metallurgy (UBM) structure disposed within the via and on a portion of the first insulating layer, surrounding the via; a second insulating layer formed on an upper surface of an outer portion of the UBM structure that is centered on the via; and a solder ball that fills the via and is disposed above an upper surface of an inner portion of the UBM structure that contacts the via, in which the UBM structure that underlies the solder ball is of a greater diameter than the solder ball.

Solder ball contact susceptible to lower stress

A semiconductor structure which includes a plurality of stacked semiconductor chips in a three dimensional configuration. There is a first semiconductor chip in contact with a second semiconductor chip. The first semiconductor chip includes a through silicon via (TSV) extending through the first semiconductor chip; an electrically conducting pad at a surface of the first semiconductor chip, the TSV terminating in contact at a first side of the electrically conducting pad; a passivation layer covering the electrically conducting pad, the passivation layer having a plurality of openings; and a plurality of electrically conducting structures formed in the plurality of openings and in contact with a second side of the electrically conducting pad, the contact of the plurality of electrically conducting structures with the electrically conducting pad being offset with respect to the contact of the TSV with the electrically conducting pad.

Semiconductor structure having offset passivation to reduce electromigration

Methods and reworked intermediate and resultant electronic modules made thereby, whereby a component in need of rework is located and removed from the module to reveal encapsulated solder connections residing within an underfill matrix. Heights of both the solder connections and underfill matrix are reduced, followed by etching the solder out of the solder connections to form openings within the underfill matrix. The underfill material is then removed to expose metallurgy of the substrate. A blank having a release layer with an array of solder connections is aligned with the exposed metallurgy, and this solder array is transferred from the blank onto the metallurgy. The transferred solder connections are then flattened using heat and pressure, followed by attaching solder connections of a new component to the flattened solder connections and underfilling these reworked solder connections residing between the new chip and substrate.

Method to recover underfilled modules by selective removal of discrete components

Growing community of inventors

New Paltz, NY, United States of America

Mario John Interrante