Molecular Imprints, Inc.

Canon Kabushiki Kaisha

Canon Nanotechnologies, Inc.

Other

Mario Johannes Meissl

Byung-Jin Choi

Sidlgata V Sreenivasan

Anshuman Cherala

Byung Jin Choi

Michael P C Watts

Norman E Schumaker

Ronald D Voisin

Niyaz Khusnatdinov

Nilabh Kumar Roy

Frank Y Xu

Daniel Babbs

Pawan Kumar Nimmakayala

Xiaoming Lu

Gerard M Schmid

Seth J Bamesberger

Hillman Bailey

Mahadevan GanapathiSubramanian

Douglas J Resnick

Michael Nevin Miller

Edward Brian Fletcher

Se-Hyuk Im

Mahadevan Ganapathisubramanian

Yeong-Jun Choi

Ecron D Thompson

Masaki Saito

Avinash Panga

Sidlagata V Sreenivasan

Ian Matthew McMackin

Philip D Schumaker

C Grant Willson

Kosta S Selinidis

Zhengmao Ye

Ozkan Ozturk

Logan L Simpson

Roger Bonnecaze

S V Sreenivasan

Wei Zhang

Jeremy Sevier

Daniel A Babbs

Michael PC Watts

Byung Jin Choii

Pawan K Nymmakayala

Hillman L Bailey

Anshuman c/o Molecular Imprints Inc Cherala

Some devices, systems, and methods obtain a set of relationship values, wherein the set of relationship values indicates relationships between control values for an imprint apparatus and corresponding overlay corrections; and estimate a set of control values based on a constrained optimization that uses the set of relationship values such that the set of control values globally minimizes a residual overlay error while the set of control values is maintained within a set of operating constraints, wherein the set of control values includes a set of in-plane control values that are in a plane and a set of out-of-plane control values that are out of the plane, wherein the plane is parallel to a template-substrate interface.

System and method for generating control values for overlay control of an imprint tool

An apparatus can include a bonding head. The bonding head can include a bonding head body, a die chuck body, and lands. The bonding head body can be coupled to the die chuck. The lands can define zones. The lands and zones can be configured so that an outer zone can be under vacuum to hold a die while an inner zone is pressurized to cause the die to bow away from the bonding head. The bowed die has a relatively smoother curvature as compared to a die bent by bowing a die chuck that has pins, lands, or both. When the die contacts a substrate using the novel bonding head, the likelihood of trapping air and creating a void during a bonding operation is significantly reduced.

Apparatus including a bonding head and a method of using the same

A method for correcting a final imprint force FIF in an imprint process is provided. Position traces of an imprint head exercising along a predetermined trajectory are obtained. A force disturbance model is established based on prior position and force traces of the imprint head. A disturbance force Fis using a predetermined motion sequence based on the force disturbance model for wafer i, where i=1 to n. A residual force offset (RFO) measurement is performed to determine an actual force Fapplied to wafer i. A disturbance force Fapplied to a field j of the wafer i is calculated using the force disturbance model, where j=1 to m. An adjustment is applied to the RFO measurement. An imprint force is applied to a film on the wafer i with the imprint head based on an output of the adjustment applied to Fand a desired force to be applied to the film on the wafer.

Method for improving accuracy of imprint force application in imprint lithography

A system and method of shaping a film with a template on a substrate. Generating a first series of parameters from tests performed on a first series of films formed with: a set of shaping conditions; a calibration measurement parameter determined for each substrate prior to shaping; and a first scaling parameter. Generating a second series of parameters from the tests performed on a second series of films produced formed with the set of shaping conditions. The second series of films produced with the calibration measurement parameter determined for each substrate; and a second scaling parameter; or without the calibration measurement parameter. Generating a scaling parameter from: the first series of the parameters; and the second series of parameters. Generating the calibration measurement parameter prior to forming the film. Forming the film using the set of shaping conditions, the calibration measurement parameter, and the scaling parameter.

System and method for shaping a film with a scaled calibration measurement parameter

A chuck for retaining a superstrate or a template. The chuck comprises a geometric structure formed on a surface of the chuck. The geometric structure includes at least one of a rounded edge portion and a roughened surface portion, such that an intensity variation of light transmitting through the geometric structure and an area of the chuck adjacent to the geometric structure is reduced.

Superstrate chuck, method of use, and method of manufacturing an article

A method of forming a planarization layer on a substrate is disclosed. The method can include aligning a superstrate with the substrate, where aligning the superstrate with the substrate comprises tuning a diffusing element to a first operational state, dispensing a formable material over the substrate, contacting the formable material over the substrate with the superstrate, tuning the diffusing element to a second operational state, where the first operational state is different from the second operational state, and curing the formable material over the substrate to form a layer over the substrate while the superstrate is contacting the formable material, where curing the formable material can include directing a set of actinic radiation beams to enter the diffusing element at an entering state and exit the diffusing element at an exiting state, and where the entering state is different from the exiting state.

Exposure apparatus for uniform light intensity and methods of using the same

A system and method for shaping a film on a partial field including determining an initial contact point. Receiving information about: a partial field of a substrate; and an edge of a patternable area of the substrate. Determining a chord that connects intersection vertices of the partial field and the edge. Determining coordinates of a bisecting line, wherein the bisecting line bisects the chord, and the bisecting line is orthogonal to the chord. Determining an initial contact point range on the bisecting line in which a template and formable material on the substrate contact each other. Contacting the formable material in the partial field on the substrate with the template at an initial contact point within the initial contact point range.

Method of determining the initial contact point for partial fields and method of shaping a surface

Methods, systems, and apparatus for identifying dimensional attributes of a first active area of a template; based at least in part on the dimensional attributes of the first active area, determining a desired magnification correction of a second active area of a substrate; determining an out-of-plane distortion of the template, the substrate, or both; applying a back pressure to the template, the substrate, or both, to compensate for the out-of-plane distortion of the template, the substrate, or both; after compensating for the out-of-plane distortion of the template, the substrate, or both: i) contacting an imprint resist positioned on the substrate with the template such that pattern features in the first active area are filled by the imprint resist, and ii) applying an additional back pressure to the template, the substrate, or both, wherein the additional back pressure is selected such that the second active area exhibits the desired magnification correction.

Template replication

Systems and methods of shaping a patterned or planarized film layer. Which may include contacting formable material on a substrate with a template during a contacting period, Which may also include reducing, during the contacting period, a pressure in an environment beyond an edge of the substrate from a first pressure to a second pressure, while the template is contacting the formable material.

Systems and methods for reducing pressure while shaping a film

Systems and methods for shaping a film. The method of shaping a film may comprise dispensing a polymerizable fluid as a plurality of droplets onto a substrate. The method of shaping a film may further comprise bringing an initial superstrate contact region of a superstrate into contact with an initial subset of droplets of the plurality of droplets. The initial subset of droplets may merge and form an initial fluid film over the initial substrate contact region. The method of shaping a film may further comprise prior to the superstrate coming into contact with the remaining plurality of droplets on the substrate, polymerizing a region of the initial fluid film on the initial substrate contact region.

Systems and methods for curing a shaped film

An imprint apparatus is provided. The imprint apparatus includes an imprint head, at least one cable assembly configured to supply a signal to the imprint head, and a cable assembly sensor configured to detect a state of the at least one cable assembly. The signal may include one or more of a voltage signal, a current signal, and a pneumatic signal. The cable assembly sensor may include a strain gauge configured to measure a strain of the at least one cable assembly or a load cell configured to measure a force on the at least one cable assembly. For example, the cable assembly may include an electric wire and/or a gas supply tube.

Apparatus and method for improving accuracy of imprint force application in imprint lithography

A system and method of forming a planarization layer on a substrate is disclosed. The method can include holding a superstrate with a superstrate chuck, the superstrate chuck positioned relative to a diffusing element, where the diffusing element includes a pattern and the superstrate chuck includes one or more geometric features, and where the pattern of the diffusing element aligns with the one or more geometric features of the superstrate chuck. The method can also include dispensing a formable material over the substrate, contacting the formable material over the substrate with a superstrate, providing a set of beams that pass through the diffusing element to cure the formable material over the substrate and form a layer over the substrate while the superstrate is contacting the formable material.

Apparatus for uniform light intensity and methods of using the same

Reducing an overlay error in nanoimprint lithography includes forming an imprinted substrate having pairs of corresponding peripheral overlay marks and corresponding central overlay marks on the imprinted substrate. An in-plane overlay error is assessed based on relative positions of corresponding central overlay marks, and a combined overlay error is assessed based on relative positions of corresponding peripheral overlay marks. A difference between the combined overlay error and the in-plane overlay error is assessed to yield an adjusted overlay error for each pair of corresponding peripheral overlay marks. The adjusted overlay error for each pair of corresponding peripheral overlay marks is compared with overlay errors associated with known out-of-plane orientation parameters of the template with respect to the substrate, and corrected out-of-plane orientation parameters are selected to reduce an expected out-of-plane overlay error of a subsequent imprinted substrate associated with out-of-plane orientation parameters of the template with respect to the substrate.

Overlay improvement in nanoimprint lithography

Systems and methods for improving robust layer separation during the separation process of an imprint lithography process are described. Included are methods of matching strains between a substrate to be imprinted and the template, varying or modifying the forces applied to the template and/or the substrate during separation, or varying or modifying the kinetics of the separation process.

Strain and kinetics control during separation phase of imprint process

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Austin, TX, United States of America

Mario Johannes Meissl