Asm International N.v.

S.o.i.tec Silicon on Insulator Technologies

Marinus J M De Blank

Nicolas Daval

Konstantin Bourdelle

Ian Cayrefourcq

Steven R A Van Aerde

Cornelius A Van Der Jeugd

The invention relates to a of manufacturing a silicon dioxide layer of low roughness, that includes depositing a layer of silicon dioxide over a substrate by a low pressure chemical vapor deposition (LPCVD) process, the deposition process employing simultaneously a flow of tetraethylorthosilicate (TEOS) as the source material for the film deposition and a flow of a diluant gas that it not reactive with TEOS, so that the diluant gas/TEOS flow ratio is between 0.5 and 100; and annealing the silicon dioxide layer at a temperature between 600&#xb0; C. and 1200&#xb0; C., for a duration between 10 minutes and 6 hours.

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Heverlee, Belgium

Marinus J M De Blank