Fuji Electric Co., Ltd.

Mariko Sato

Takeshi Fujii

Takuro Inamoto

Provided is a manufacturing method for manufacturing a SiC substrate having a flattened surface, including etching the surface of the SiC substrate by irradiating the surface of the SiC substrate with atomic hydrogen while the SiC substrate having an off angle is heated. In the etching, the SiC substrate may be heated within a range of 800&#xb0; C. or higher and 1200&#xb0; C. or lower.

Manufacturing method of SiC substrate

Providing a manufacture method of a gate insulating film formed on an SiC substrate having thereon an SiON film, achieving both of the maintenance of an SiON film structure and the formation of a high-quality insulating film. A manufacture method of a gate insulating film for an SiC semiconductor device comprises preparing a transfer plate comprising a transfer substrate and an insulating film formed thereon; preparing a surface-processed substrate comprising an SiC substrate and an epitaxial silicon oxynitride film as an atomic monolayer formed thereon; and transferring the insulating film from the transfer plate onto the silicon oxynitride film of the surface-processed substrate to produce the surface-processed substrate having a transferred insulating film.

Manufacture method of gate insulating film for silicon carbide semiconductor device

A method of manufacturing a silicon carbide semiconductor device having a contact formed between a p-type silicon carbide semiconductor body and a metal electrode, includes forming on a surface of the p-type silicon carbide semiconductor body, a graphene layer so as to reduce a potential difference generated in a conjunction interface between the p-type silicon carbide semiconductor body and the metal electrode; forming an insulator layer comprising a hexagonal boron nitride on a surface of the graphene layer; and forming the metal electrode on a surface of the insulation layer.

Growing community of inventors

Fujisawa, Japan

Mariko Sato