Other

Renesas Technology Corp.

Mariko Mizuo

Toshiharu Katayama

Yoko Miyazaki

An inspection device inspecting for a defect of a semiconductor wafer based on an image of the wafer surface includes an imaging device obtaining image data of a wafer subjected to inspection, a storage circuit storing reference image data of the wafer, an image comparison unit comparing the image data of the wafer subjected to inspection and the reference image data using an inspection condition, an acquiring circuit acquiring wafer in process (WIP) data of the wafer subjected to inspection, and a WIP data operating unit setting the inspection condition based on the WIP data obtained.

Device inspecting for defect on semiconductor wafer surface

There are described a semiconductor inspection system for inspecting recessed defects formed in a semiconductor wafer and a semiconductor device manufacturing method including an inspection step of inspecting recessed defects formed in a semiconductor wafer. The semiconductor inspection system and the semiconductor device manufacturing method enable the following operations: an operation of radiating a laser beam onto a semiconductor wafer; an operation of detecting light scattered from foreign particles, as a result of a laser beam being radiated onto the semiconductor wafer; an operation of converting the detected scattered light into an electric signal; and an operation of outputting information about the recessed defects formed in the semiconductor wafer by means of subtracting the data pertaining to only the foreign particles located on the semiconductor wafer from the data pertaining to both the foreign particles and recessed defects formed in the semiconductor wafer.

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Hyogo, Japan

Mariko Mizuo