Kla-tencor Technologies Corporation

Applied Materials, Inc.

Kla Tencor Corporation

Pdf Solutions, Incorporated

Etec Systems, Inc.

Electron Optica, Inc.

Other

Leland Stanford Junior University

Marian Mankos

David Lewis Adler

Tai-Hon Philip Chang

Kim Yang Lee

Indranil De

Christopher Hess

Dennis Ciplickas

Andres Fernandez

Harald F Hess

Steven Thomas Coyle

Liqun Han

Jeremy Cheng

Qi Hu

Balasubramanian Murugan

Lee H Veneklasen

Xinrong Jiang

Jeffrey S Sullivan

Salam Harb

Paul C Allen

David Aitan Soltz

Ming Lun Yu

Xiaolan Chen

Mohammed Tahmassebpur

Rex Runyon

C Neil Berglund

Vassil Spasov

Mark Armstrong McCord

Kurt H Weiner

Timothy N Thomas

Kirk Joseph Bertsche

Mark A Kasevich

Luca Grella

Marek Zywno

David J Walker

Douglas Earl Holmgren

Windsor Owens

Mark A Gesley

John D Greene

Eric Munro

David G Stites

Ho-Seob Kim

Paul Frank Marella

Donald J Parker

Vidhya Krishnamurthi

Allan L Sagle

Brannon Klopfer

Shem-Tov Levi

Thomas Juffmann

Lawrence Peter Muray

Stewart A Koppell

Izzy Lewis

Andres Fernadez

Tim Thomas

Bart Scholte Van Mast

Carmela Moreno

Systems, devices, and methods for performing a non-contact electrical measurement (NCEM) on a NCEM-enabled cell included in a NCEM-enabled cell vehicle may be configured to perform NCEMs while the NCEM-enabled cell vehicle is moving. The movement may be due to vibrations in the system and/or movement of a movable stage on which the NCEM-enabled cell vehicle is positioned. Position information for an electron beam column producing the electron beam performing the NCEMs and/or for the moving stage may be used to align the electron beam with targets on the NCEM-enabled cell vehicle while it is moving.

Systems, devices, and methods for performing a non-contact electrical measurement on a cell, non-contact electrical measurement cell vehicle, chip, wafer, die, or logic block

Improved aberration correction in multipass electron microscopy is provided by having Fourier images of the sample (instead of real images) at the reflection planes of the resonator. The resulting &#x2212;1 magnification of the sample reimaging can be compensated by appropriate sample placement or by adding compensating elements to the resonator. This enables simultaneous correction of lowest order chromatic and spherical aberration from the electron objective lenses. If real images of the sample are at the reflection planes of the resonator instead, only the lowest order chromatic aberration can be corrected.

Aberration reduction in multipass electron microscopy

Methods for performing a non-contact electrical measurement on a cell, chip, wafer, die, or logic block

One embodiment relates to apparatus for correcting aberrations introduced when an electron lens images a specimen. A specimen is illuminated, and a cathode objective lens accelerates emitted or scattered electrons. The resulting electron beam is deflected by a magnetic beam separator that disperses the incoming electron beam according to its energy. The dispersed beam is focused at the reflection plane of an electron mirror. After this focusing, and a second deflection by the beam separator, the beam dispersion is removed. The dispersion-free beam is reflected in a second electron mirror which corrects aberrations of the cathode objective lens. The beam separator then deflects the beam towards projection optics which form a magnified, aberration-corrected image. When energy filtering is needed, a knife-edge plate is inserted between the beam separator and first electron mirror to remove electrons outside the selected range. Other embodiments are disclosed.

Compact arrangement for aberration correction of electron lenses

The present invention discloses an e-beam inspection tool, and an apparatus for detecting defects. In one aspect is described an apparatus for detecting defects that includes a dual-deflection system that moves the e-beam over the integrated circuit to each of the plurality of predetermined locations, the dual deflection system including a magnetic deflection component that provides by magnetic deflection for movement of the e-beam through a plurality of areas on the integrated circuit and an electrostatic deflection component that provides by electrostatic deflection for movement of the e-beam within each of the plurality of areas.

E-beam inspection apparatus and method of using the same on various integrated circuit chips

One embodiment pertains to an apparatus for compressing an electron pulse. An electron source is illuminated by a pulsed laser and generates a pulse of electrons. The pulse enters a beam separator which deflects the electrons by 90 degrees into an electron mirror. The faster, higher energy electrons form the leading edge of the pulse and penetrate more deeply into the retarding field of the electron mirror than the lower energy electrons. After reflection, the lower energy electrons exit the electron mirror before the higher energy electrons and form the leading edge of the pulse. The reflected pulse reenters the separator and is deflected by 90 degrees towards the specimen. The fast, higher energy electrons catch up with the slow, low energy electrons as the electrons strike the specimen. The electrons are scattered by the specimen and used to form a two-dimensional image or diffraction pattern of the specimen.

Mirror pulse compressor for electron beam apparatus

One embodiment relates to an apparatus for correcting aberrations introduced when an electron lens forms an image of a specimen and simultaneously forming an electron image using electrons with a narrow range of electron energies from an electron beam with a wide range of energies. A first electron beam source is configured to generate a lower energy electron beam, and a second electron beam source is configured to generate a higher energy electron beam. The higher energy beam is passed through a monochromator comprising an energy-dispersive beam separator, an electron mirror and a knife-edge plate that removes both the high and low energy tail from the propagating beam. Both the lower and higher energy electron beams are deflected by an energy-dispersive beam separator towards the specimen and form overlapping illuminating electron beams. An objective lens accelerates the electrons emitted or scattered by the sample. The electron beam leaving the specimen is deflected towards a first electron mirror by an energy-dispersive beam separator, which introduces an angular dispersion that disperses the electron beam according to its energy. A knife-edge plate, located between the beam separator and first electron mirror, is inserted that removes all of the beam with energy larger and smaller than a selected energy and filters the beam according to energy. One or more electron lenses focus the electron beam at the reflection surface of the first electron mirror so that after the reflection and another deflection by the same energy-dispersive beam separator the electron beam dispersion is removed. The dispersion-free and energy-filtered electron beam is then reflected in a second electron mirror which corrects one or more aberrations of the objective lens. After the second reflection, electrons are deflected by the magnetic beam separator towards the projection optics which forms a magnified, aberration-corrected, energy-filtered image on a viewing screen.

Aberration-corrected and energy-filtered low energy electron microscope with monochromatic dual beam illumination

In one embodiment, a first vacuum chamber of an electron beam column has an opening which is positioned along an optical axis so as to pass a primary electron beam that travels down the column. A source that emits electrons is positioned within the first vacuum chamber. A beam-limiting aperture is configured to pass a limited angular range of the emitted electrons. A magnetic immersion lens is positioned outside of the first vacuum chamber and is configured to immerse the electron source in a magnetic field so as to focus the emitted electrons into the primary electron beam. An objective lens is configured to focus the primary electron beam onto a beam spot on a substrate surface so as to produce scattered electrons from the beam spot. Controllable deflectors are configured to scan the beam spot over an area of the substrate surface. Other features and embodiments are also disclosed.

Electron beam column and methods of using same

One embodiment relates to an apparatus for forming an electron image using electrons with a narrow range of electron energies from an electron beam with a wide range of energies. An electron beam source is configured to generate an electron beam, and condenser lenses collimate the beam into an objective lens configured to illuminate the specimen. The illuminating electrons are scattered by the specimen and form an electron beam with a range of energies that enter a magnetic prism separator. After a 90 degree deflection, the prism separator introduces an angular dispersion that disperses the incoming electron beam according to its energy. A knife-edge plate removes either the high or low energy tail from the propagating beam. An electron lens is configured to focus the electron beam into an electron mirror so that after the reflection, the other energy tail is stopped on the same knife-edge plate. The remaining nearly monochromatic beam reenters the prism separator and is deflected toward the projection system and used to form a two-dimensional electron image on an electron detector. By adjusting the strength of the prism separator, the specific electron energy used for imaging is selected from the energy distribution of the scattered electrons. Other embodiments are also disclosed.

Mirror energy filter for electron beam apparatus

One embodiment relates to an electron-beam apparatus for defect inspection and/or review of substrates or for measuring critical dimensions of features on substrates. The apparatus includes an electron gun and an electron column. The electron gun includes an electron source configured to generate electrons for an electron beam and an adjustable beam-limiting aperture which is configured to select and use one aperture size from a range of aperture sizes. Another embodiment relates to providing an electron beam in an apparatus. Advantageously, the disclosed apparatus and methods reduce spot blur while maintaining a high beam current so as to obtain both high sensitivity and high throughput.

High-sensitivity and high-throughput electron beam inspection column enabled by adjustable beam-limiting aperture

One embodiment relates to an apparatus for generating two spatially overlapping electron beams on a specimen. A first electron beam source is configured to generate a low-energy electron beam, and an energy-dispersive device bends the low-energy electron beam towards an semitransparent electron mirror. The semitransparent electron mirror is biased to reflect the low-energy electron beam. A second electron beam source is configured to generate a high-energy electron beam that passes through an opening in the semitransparent electron mirror. Both the low- and high-energy electron beams enter the same energy-dispersive device that bends both beams towards the specimen. A deflection system positioned between the high-energy electron source and semitransparent electron mirror is configured to deflect the high-energy electron beam by an angle that compensates for the difference in bending angles between the low- and high-energy electron beams introduced by the energy-dispersive device. Other embodiments are also disclosed.

Compact arrangement for dual-beam low energy electron microscope

One embodiment relates to an apparatus for generating a charged particle beam with reduced energy width. A charged particle source is configured to generate a charged particle beam with a range of energies. An energy-dispersive device bends the high-energy component of the charged particle beam at less of an angle in comparison to the bending angle of the low-energy component of the charged particle beam, such that the higher and lower energy charged particle beam components exit the energy-dispersive device at different angles of trajectory. A charged particle mirror reflects the charged particle beam such that charged particles entering at an angle with respect to the normal to the mirror reflection plane exit the mirror symmetrically with respect to the normal and at the same angle. Charged particle lenses converge all energy components exiting the energy-dispersive device at different angles of trajectory at the charged particle mirror reflection plane. A knife-edge plate removes all charged particles with energies higher and lower than a selected energy width. Other embodiments are also disclosed.

Mirror monochromator for charged particle beam apparatus

A method of forming a gate valve for use in a high vacuum environment of an electron gun by machining a core of non-magnetic nickel-chromium-molybdenum-iron-tungsten-silicon-carbon alloy that is weldable with nickel alloys and has a tensile strength of about 750 megapascals, machining a cladding of nickel-iron, welding the core to the cladding to form the gate valve, and machining the gate valve so as to remove any dimensional differences at an interface between the core and the cladding. In this manner, because the final mechanical tolerance is controlled by machining instead of part assembling, extremely high alignment accuracy is obtained. The final part provides field shielding as provided by the nickel alloy shell, low stray field provided by the non-magnetic alloy, good vacuum performance, and tight mechanical tolerance control. Also, because the alloy has the advantage of a low oxidation rate in comparison to stainless steel and titanium, there is less contamination buildup due to conditions such as electron beam bombardment.

Shielding, particulate reducing high vacuum components

Growing community of inventors

Palo Alto, CA, United States of America

Marian Mankos