Asml Netherlands B.v.

Nederlandse Organisatie Voor Toegepast-natuurwetenschappelijk Onderzoek Tno

Asml Holding N.v.

Stichting Imec Nederland

Mária Péter

Pieter-Jan Van Zwol

David Ferdinand Vles

Maxim Aleksandrovich Nasalevich

Arnoud Willem Notenboom

Willem Joan Van Der Zande

Willem-Pieter Voorthuijzen

Paul Janssen

Johannes Petrus Martinus Bernardus Vermeulen

Adrianus Johannes Maria Giesbers

Marcus Adrianus Van De Kerkhof

Derk Servatius Gertruda Brouns

Evgenia Kurganova

Erik Achilles Abegg

Johan Hendrik Klootwijk

Erwin Rinaldo Meinders

Aleksandar Nikolov Zdravkov

Andrey Alexandrovich Nikipelov

James Norman Wiley

Pradeep Kumar Govil

Wilhelmus Theodorus Anthonius Johannes Van Den Einden

Aage Bendiksen

Antonius Franciscus Johannes De Groot

Egbert Lenderink

Matthias Kruizinga

Hrishikesh Patel

Gerrit Van Den Bosch

Gijsbert Rispens

Ties Wouter Van Der Woord

Peter Theodorus Maria Giesen

Nadja Schuh

Nirupam Banerjee

Chaitanya Krishna Ande

Michiel Alexander Blauw

Antonius Willem Verburg

Peter Simon Antonius Knapen

Leonid Aizikovitsj Sjmaenok

Nicolae Maxim

Claudia Piliego

Marcel Peter Meijer

Wouter Rogier Meijerink

Raymond Olsman

Vadim Yevgenyevich Banine

Cheng-Qun Gui

Jozef Petrus Henricus Benschop

Luigi Scaccabarozzi

Florian Didier Albin Dhalluin

Martinus Hendrikus Antonius Leenders

Andrei Mikhailovich Yakunin

Arjen Boogaard

Dennis De Graaf

Beatrijs Louise Marie-Joseph Katrien Verbrugge

Mercedes Crego Calama

Tamara Druzhinina

Alexey Sergeevich Kuznetsov

Mohammad Reza Kamali

Marcel Zevenbergen

Hendrikus Jan Wondergem

Johannes Joseph Janssen

Wilhelmus Johannes Maria De Laat

Marcus Theodoor Wilhelmus Van Der Heijden

Alexander Ludwig Klein

Michael Alfred Josephus Kuijken

Paulus Wilhelmus Leonardus Van Dijk

Zomer Silvester Houweling

Eric Willem Felix Casimiri

Roland Anthony Tacken

Renatus Marius De Zwart

Sicco Oosterhoff

Ruud Vullers

Anton Wilhelmus Duys

Sten Vollebregt

Eric Willem Casimiri

Beatrijs Louise Verbrugge

Michael Alfred Kuijken

Martinus Hendrikus Leenders

Johannes Petrus Vermeulen

Lindsay Brown

Francois Furthner

Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

Membrane for EUV lithography

Methods of manufacturing a pellicle for a lithographic apparatus including a method involving depositing at least one graphene layer on a planar surface of a substrate. The substrate has a first substrate portion and a second substrate portion. The method further includes removing the first substrate portion to form a freestanding membrane from the at least one graphene layer. The freestanding membrane is supported by the second substrate portion.

Method of manufacturing a pellicle for a lithographic apparatus, a pellicle for a lithographic apparatus, a lithographic apparatus, a device manufacturing method, an apparatus for processing a pellicle, and a method for processing a pellicle

A pellicle assembly includes a pellicle frame defining a surface onto which a pellicle is, or to be, attached. The pellicle assembly includes one or more three-dimensional expansion structures that allow the pellicle to expand under stress. A pellicle assembly for a patterning device, the pellicle assembly includes one or more actuators for moving the pellicle assembly towards and way from the patterning device.

Pellicle and pellicle assembly

A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.

A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.

Metal-silicide-nitridation for stress reduction

A method of manufacturing a pellicle for a lithographic apparatus, the method including locally heating the pellicle using radiative heating, and depositing coating material simultaneously on both sides of the pellicle, and pellicles manufactured according to this method. Also disclosed is the use of a multilayer graphene pellicle with a double-sided hexagonal boron nitride coating in a lithographic apparatus.

Simultaneous double-side coating of multilayer graphene pellicle by local thermal processing

The invention relates to a pellicle assembly comprising a pellicle frame defining a surface onto which a pellicle is attached. The pellicle assembly comprises one or more three-dimensional expansion structures that allow the pellicle to expand under stress. The invention also relates to a pellicle assembly for a patterning device comprising one or more actuators for moving the pellicle assembly towards and way from the patterning device.

A catalyst including: a first layer including a transition metal; a base layer; and an interlayer, wherein the interlayer is disposed between the base layer and the first layer is disclosed. Also disclosed are methods for preparing a catalyst as well as for synthesizing graphene, a pellicle produced using the catalyst or methods disclosed herein, as well as a lithography apparatus including such a pellicle.

Graphene pellicle lithographic apparatus

A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and including a stack having: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine.

A pellicle frame for supporting a pellicle, the frame having a first surface and a second surface opposite the first surface, and a structure provided between the first and the second surfaces, wherein the first and second surfaces and the structure at least partially define at least one volume therebetween that is devoid of the material that forms the frame.

Pellicle frame and pellicle assembly

A pellicle assembly is disclosed that has a pellicle frame defining a surface onto which a pellicle is to be attached. The pellicle assembly includes one or more three-dimensional expansion structures that allow the pellicle to expand under stress. There is also disclosed a pellicle assembly for a patterning device, the pellicle assembly including one or more actuators for moving the pellicle assembly towards and way from the patterning device.

Growing community of inventors

Eindhoven, Netherlands

Mária Péter