Aixtron Ag

Aixtron, Inc.

Eugenus, Inc.

Marcus Schumacher

Peter Baumann

Johannes Lindner

Piotr Strzyzewski

Martin Dauelsberg

Gerd Strauch

Marc Deschler

Holger Juergensen

Timothy McEntee

Antonio Mesquida Küsters

A device for depositing at least one especially thin layer onto at least one substrate includes a process chamber housed in a reactor housing and includes a movable susceptor which carries the at least one substrate. A plurality of gas feed lines run into said process chamber and feed different process gases which comprise layer-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the layer-forming components onto the substrate. In order to increase throughput, the process chamber is provided with a plurality of separate deposition chambers into which different gas feed lines run, thereby feeding individual gas compositions. The substrate can be fed to said chambers one after the other by moving the susceptor and depositing different layers or layer components.

Apparatus and method for high-throughput chemical vapor deposition

The invention relates to a method for depositing at least one semiconductor layer on at least one substrate in a processing chamber (). Said semiconductor layer is composed of several components which are evaporated by non-continuously injecting a liquid starting material () or a starting material () dissolved in a liquid into a tempered evaporation chamber () with the aid of one respective injector unit () while said vapor is fed to the processing chamber by means of a carrier gas (). The inventive method is characterized in that the mass flow rate parameters, such as the preliminary injection pressure, the injection frequency, the pulse/pause ratio, and the phase relation between the pulses/pauses and the pulses/pauses of the other injector unit(s), which determine the progress of the mass flow rate of a first silicon-containing starting material and a germanium-containing second starting material () through the associated injector unit (), are individually adjusted or varied.

Process for depositing layers containing silicon and germanium

The invention relates to a method and device for depositing at least one layer on at least one substrate in a process chamber. Said layer comprises several components and is insulating, passivating or electrically conductive. The components are vaporized in a tempered vaporization chamber by means of non-continuous injection of a liquid starting material or a starting material dissolved in a liquid using a respective injector unit. Said vapor is guided to the process chamber by means of a carrier gas. It is important to individually adjust or vary the material flow parameters, such as injection frequency and the pulse/pause ratio and the phase relation of the pulse/pauses to the pulse/pauses of the other injector unit, determining the time response of the flow of material through each injector unit. The pressure in the process chamber is less than 100 mbars, the process chamber is tempered and several series of layers are deposited on the substrate during one process step.

Process and apparatus for depositing single-component or multi-component layers and layer sequences using discontinuous injection of liquid and dissolved starting substances via a multi-channel injection unit

The invention relates to a device and method for depositing one or more layers onto at least one substrate placed inside a reaction chamber. The layers are deposited while using a liquid or solid starting material for one of the reaction gases utilized, which are fed via a gas admission unit to the reaction chamber where they condense or epitaxially grow on the substrate. The gas admission unit comprises a multitude of buffer volumes in which the reaction gasses enter separate of one another, and exit through closely arranged outlet openings while also being spatially separate of one another. The temperature of reaction gases is moderated while passing through the gas admission unit.

Device and method for depositing one or more layers on a substrate

Growing community of inventors

Kerpen, Germany

Marcus Schumacher