Aixtron Se

Marcel Kollberg

Gerhard Karl Strauch

Johannes Käppeler

Francisco Ruda Y Witt

Walter Franken

Markus Gersdorff

Mike Pfisterer

Markus Deufel

Wilhelm Josef Thomas Krücken

Daniel Brien

Hendrik Rauf

Florenz Kittel

Mario Wilhelm Angelo Kessel

A susceptor arrangement for use in a CVD reactor includes a circular or annular susceptor with a first susceptor broad side, on which a substrate holder and at least one covering element are arranged. At least one of the covering elements consists of multiple covering plates, in which a lowermost covering plate is adjacent to the first broad side face of the susceptor, and an uppermost covering plate covers the lowermost covering plate at least in certain regions and forms a free broad side face of the susceptor arrangement. The covering plates are preferably produced from silicon carbide, and are connected to one another by positioning elements.

Susceptor arrangement of a CVD reactor

A component made of a quartz blank is used as a component part of a CVD reactor. At least one cavity of the component is created by selective laser etching, wherein a fluid flows through the at least one cavity. When in use, the component is heated to temperatures in excess of 500° C., and comes into contact with hydrides of the main groups IV, V or VI and/or with organometallic compounds or halogenides of elements of the main groups II, III or V.

Method for producing a component part of a CVD reactor

A CVD reactor includes a gas-tight and evacuatable reactor housing and an inner housing arranged therein. The inner housing has means for the infeed of a process gas and means for holding a substrate for treatment in the inner housing by means of the process gases. The inner housing also has a loading opening which can be closed off by a sealing element of a closure element. In its closure position, the closure element bears with an encircling sealing zone against a counterpart sealing zone which encircles the loading opening on the outer side of the inner housing. The sealing element is fastened to a carrier as to be adjustable in terms of inclination and/or pivotally movable about at least one spatial axis (X, Y, Z) and/or so as to be elastically deflectable in the direction of one of the spatial axes (X, Y, Z).

Closure element for closing a loading opening of an inner housing of a CVD reactor

A III-V semiconductor layer is deposited using an apparatus comprising a process chamber, a susceptor for receiving one or more substrates to be coated, and a gas inlet element which comprises a plurality of process gas inlet zones. An etching gas inlet in the flow direction of the hydride and the MO compound opens into the process chamber downstream of the process gas inlet zones. A control device is adapted and the process gas inlet zones and the etching gas inlet are arranged such that the process gases cannot enter into the etching gas inlet during deposition of the semiconductor layer and the etching gas cannot enter into the process gas inlet zones during purification of the process chamber. The etching gas inlet is formed by an annular zone of the process chamber cover around the gas inlet element and by an annular fastening element for fastening a cover plate.

Apparatus for deposition of a III-V semiconductor layer

A CVD reactor includes a flat component with two broad sides extending parallel to each other and spaced apart from each other by a thickness. An outer edge of each broad side transitions without kinks into an edge of an outer peripheral side of the flat component. The thickness of the flat component is substantially less than a diameter of the flat component. The flat component includes a core body composed of graphite. The core body is coated with a SiC or TaC coating, which exhibits a compressive stress at room temperature. In order to reduce the stress between the coating and the core body, the rounding arc length of the outer edge is greater than 90&#xb0; and the rounding radius of the outer edge is at most 1 mm and/or is greater than the coating thickness. Additionally, rounding segments of the peripheral side transition into each other without kinks.

Coated flat component in a CVD reactor

A CVD reactor includes a gas inlet element for introducing a process gas into a process chamber arranged between a process chamber cover and a susceptor. The gas inlet element contains at least one metal surface that comes into contact with the process gas. The metal surface has a passivation layer which prevents the metal surface from flaking due to exposure to one or more reactive gases. Cooling channels are arranged such that the passivation layer is maximally heated to 100&#xb0; C. in a cleaning step in which chlorine is introduced into the process chamber and the susceptor is heated to at least 700&#xb0; C. At the same time, the passivation layer is formed by chemically reacting a metal-organic compound with the metal atoms of the metal surface. The cleaning gas inlet openings are arranged such that the cleaning gas comes into contact with the metal surface that has the passivation layer.

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Würselen, Germany

Marcel Kollberg