Commissariat a L'energie Atomique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Stmicroelectronics (crolles 2) Sas

Soitec

S.o.i. Tec Silicon on Insulator Technologies of Chemin Des Franques

Marc Zussy

Hubert Moriceau

Bernard Aspar

Frank Fournel

Christophe Morales

Franck Fournel

Chrystelle Lagahe-Blanchard

Laurent Bally

Michel Bruel

Olivier Rayssac

Jean-Yves Laurent

Aomar Halimaoui

Pierre Montmeat

Raphael Salot

Jean-Pierre Joly

Didier Marsacq

Maxime Argoud

Léa Di Cioccio

Marek Kostrzewa

Jérôme Dechamp

Beatrice Biasse

Jean-Frédéric Clerc

Dominique Jourde

B&eacute;atrice Biasse

A method for the temporary bonding of a substrate of interest to a handle substrate, comprising a step of forming an assembly by placing the bonding faces of the substrate of interest and of the handle substrate into contact with one another via a thermoplastic polymer, and a step of treating the assembly at a treatment temperature that exceeds the glass transition temperature of the thermoplastic polymer. Prior to the assembly forming step, this method comprises: a step of producing, at the bonding face of one of either the substrate of interest or the handle substrate, a central cavity surrounded by a peripheral ring made of a material that is rigid at the treatment temperature, and a step of forming a layer of the thermoplastic polymer filling the central cavity.

Temporary bonding method with thermoplastic adhesive incorporating a rigid ring

The invention aims for a wafer edge trimming methodadhered on a support waferby way of an interface layer. A zone at the perimeterof the waferis trimmed by grinding. The stopping of the grinding is advantageously done at the level of the interface layer. To do this, an interface layercomprising a transition layerhaving a resistance to grinding greater than that of the waferis used. According to a possibility, detecting an increase of the resistance to grinding during the grinding is done, so as to stop the grinding.

Method for wafer trimming

A method for recycling a substrate holder adapted to receive a substrate for at least one deposition step of a layer of a material on the substrate also leading to the depositing of a layer of a material on the substrate holder, the method including implanting ion species through a receiving surface of the substrate holder so as to form at least one buried weakened plane delimiting a thin film underneath the receiving surface of the substrate holder, exfoliating the thin film from the substrate holder so as to break up the thin film, and removing a stack including at least one layer of a material deposited on the thin film resulting from the at least one deposition step of the layer of a material on the substrate.

Method for recycling a substrate holder

A method for thinning samples including the steps of: a) providing at least one sample having a front and a rear face, b) providing a frame substrate having a first face and a second face opposite the first, including a through-opening which opens into the first and second face, which is configured to receive the sample, c) positioning the sample so it is disposed in the through-opening, the front face being oriented to the same side as the first face, and d) thinning the frame substrate and the sample simultaneously from the first face and the front face, respectively, so that at the end of thinning, the faces extend substantially in the same plane, the thinning being carried out using a grinder, the frame substrate and the sample being disposed on a rotary disk held in place by aspiration, the flanks of the sample remaining free during the thinning.

Method for thinning samples

A process for assembling a first wafer and a second wafer each bevelled on their peripheries includes excavating the bevelled peripheral part of at least one first side of the first wafer to create a deposit bordering the region excavated in the material of the first wafer. The first side and a second side of the second wafer are then bonded together.

Process for assembling two wafers and corresponding device

A method for producing a holder of at least one substrate from a first and a second plate, each including first and second parallel flat faces, the method including: a) delimitation on the first face of the second plate of plural surfaces by a non-bondable area in which a direct bonding with a face of the first plate is prevented; b) bringing the first face of the second plate into contact with the first face of the first plate; c) direct bonding between the first faces except in the non-bondable area; and d) removal of the portions of the second plate located vertically below surfaces inside the non-bondable area.

Method for producing a substrate holder

A method for obtaining a film made out of a first material on a polymer support, said method comprising bonding a first wafer to a second wafer, thereby defining a bonding interface between said first wafer and said second wafer, at least one of said first and second wafers comprising a layer of said first material situated in proximity to said bonding interface, in said first wafer, hollowing out a cavity, said cavity comprising a bottom parallel to said bonding interface that defines, in said first wafer, a bottom zone at a controlled distance relative to said second wafer, forming, in said cavity, a polymer layer on a thickness controlled from a bottom thereof to obtain a combined wafer portion, said combined wafer portion comprising a bottom zone formed by said polymer layer on said bottom and a peripheral zone, and eliminating said second wafer on a major portion of a thickness thereof, thereby releasing, beneath said polymer layer, a film comprising said layer of said first material.

Method of fabricating polymer film in the cavity of a wafer

A method for making a support of at least one substrate, including: making a stack including at least two substrates, each of the two substrates including two opposite main faces, both substrates being secured to each other such that one of the main faces of a first of the two substrates is positioned facing one of the main faces of the second of the two substrates and against an etch-stop material; etching, through the first of the two substrates and with stop on the etch-stop material, at least one location that can receive a substrate that can be supported by the support.

Method for building a substrate holder

A method for trimming a structure obtained by bonding a first wafer to a second waver on contact faces and thinning the first waver, wherein at least either the first wafer or the second wafer is chamfered and thus exposes the edge of the contact face of the first wafer, wherein the trimming concerns the first wafer. The method includes a) selecting the second wafer from among wafers with a resistance to a chemical etching planned in b) that is sufficient with respect to the first wafer to allow b) to be carried out; b) after bonding the first wafer to the second wafer, chemical etching the edge of the first wafer to form in the first wafer a pedestal resting entirely on the contact face of the second wafer and supporting the remaining of the first wafer; and c) thinning the first wafer until the pedestal is reached and attacked, to provide a thinned part of the first wafer.

Method for trimming a structure obtained by the assembly of two plates

A method of separating a structure including a fragile zone delimiting two substructures to be separated, where at least one plane blade is advanced in a separation plane corresponding to a median plane of the fragile zone, from an entry edge of the structure in a direction of advance toward an exit edge of the structure, so as to cause progressive separation of the two substructures, and where the inclination of the blade in the separation plane is varied relative to the direction of advance.

Method and device for separating a structure

A method of fabricating a mixed microtechnology structure includes providing a provisional substrate including a sacrificial layer on which is formed a mixed layer including at least first patterns of a first material and second patterns of a second material different from the first material, where the first and second patterns reside adjacent the sacrificial layer. The sacrificial layer is removed exposing a mixed surface of the mixed layer, the mixed surface including portions of the first patterns and portions of the second patterns. A continuous is formed covering layer of a third material on the mixed surface by direct bonding.

Method of fabricating a mixed microtechnology structure and a structure obtained thereby

A microbattery has a support having a front face, a rear face, first and second current collectors arranged on the front face. A stack including a cathode and an anode separated by an electrolyte is arranged on the current collectors. The anode and cathode respectively contact the first and second current collectors. A protective layer covers the stack. The microbattery has connections in contact with the first and second current collectors, passing through the support from the front face to the rear face. The stack substantially covers of the front face of the support. A method for producing the mircobattery includes etching cavities, in the front face of the support, having a depth that is smaller than the thickness of the support, filing of the cavities with a conducting material and removing a layer of the rear face of the support to uncover the conducting material in the cavities.

Microbattery comprising through-connections and production method thereof

The invention relates to the preparation of a thin layer comprising a step in which an interface is created between a layer used to create said thin layer and a substrate, characterized in that said interface is made in such a way that it is provided with at least one first zone (Z) which has a first level of mechanical strength, and a second zone (Z) which has a level of mechanical strength which is substantially lower than that of the first zone. Said interface can be created by glueing surfaces which are prepared in a differentiated manner, by a layer which is buried and embrittled in a differentiated manner in said zones, or by an intermediate porous layer.

Detachable substrate or detachable structure and method for the production thereof

The invention relates to a method for producing a semiconducting structure on a semiconducting substrate, one surface of which has a topology, this method including:

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Grenoble, France

Marc Zussy