Applied Materials, Inc.

Marc Michael Kollrack

Dan Maydan

Kam S Law

Robert M Robertson

Angela Lee

Pamela Lou

Amorphous silicon thin films can be deposited onto large area glass substrates at high deposition rates by chemical vapor deposition using pressure of at least 0.8 Torr and temperatures of about 270-350&deg; C. and fairly high gas flow rates of silane in a hydrogen carrier gas. The spacing between the inlet gas manifold and the substrate in the CVD chamber is maintained so as to maximize the deposition rate. Improved transistor characteristics are observed when the substrate is either exposed to a hydrogen plasma for a few seconds prior to high rate deposition of the amorphous silicon, or when a first layer of amorphous silicon is deposited using a slow deposition rate process prior to deposition of the high deposition rate amorphous silicon.

Method for depositing amorphous silicon thin films onto large area glass substrates by chemical vapor deposition at high deposition rates

Multilayer deposition of thin films onto glass substrates to form thin film transistors can be carried out in the same chamber under similar reaction conditions at high deposition rates. We have found that sequential thin layers of silicon nitride and amorphous silicon can be deposited in the same chamber by chemical vapor deposition using pressure of at least 0.5 Torr and substrate temperatures of about 250-370&deg; C. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single multichamber vacuum system.

Method for multilayer CVD processing in a single chamber

High quality silicon nitride thin films can be deposited by plasma CVD onto large area glass substrates at high deposition rates by adjusting the spacing between the gas inlet manifold and substrate, maintaining the temperature at about 300.degree.-350.degree. C., and a pressure of at least 0.8 Torr. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single vacuum system.

Plasma CVD of silicon nitride thin films on large area glass substrates

A method of limiting sticking of a body (substrate) to a susceptor after the body has been coated with a layer in a deposition chamber by plasma chemical vapor deposition includes subjecting the coated body to a plasma of an inactive gas, e.g., hydrogen, nitrogen, argon or ammonia, which does not adversely affect the coating and does not add additional layers to the body. After the coated body is subjected to the plasma of the inactive gas, the body is separated from the susceptor.

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Alameda, CA, United States of America

Marc Michael Kollrack